公开(公告)号：US11072848B2

公开(公告)日：2021-07-27

申请号：US16253264

申请日：2019-01-22

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Xiao Liu ,  Battogtokh Jugdersuren ,  Brian T. Kearney

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/58 ,  H01L35/34 ,  H01L35/08 ,  H01L35/22

Abstract: A method for producing high-temperature sputtered stoichiometric TiN thin films. A substrate is placed in a sputtering chamber a Ti target to be sputtered and the substrate temperature is controlled to be between room temperature and about 800° C. The sputtering chamber is evacuated to a base pressure of 2×10−7 Torr or lower, The Ti target is presputtered under an Ar gas flow at a pressure of 2-15 mTorr in a radio frequency (RF) power of 50-200 W. The Ti is then sputtered onto the substrate in the presence of N2 and Ar gas flows under the same pressure and RF power, with the ratio of N2 to Ar favoring N to ensure that the film is nitrogen-saturated.

公开(公告)号：US11072530B2

公开(公告)日：2021-07-27

申请号：US16095029

申请日：2017-12-22

Applicant: LG CHEM, LTD.

Inventor： Kyung Moon Ko ,  Cheol Hee Park ,  Chee Sung Park ,  Min Kyoung Kim

IPC: H01L35/18 ,  C01B19/00 ,  H01L49/00 ,  H01L31/18 ,  H01L35/34 ,  H01L31/04 ,  H01L31/0272 ,  H01L31/032 ,  H01L35/14

Abstract: A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

公开(公告)号：US11063197B2

公开(公告)日：2021-07-13

申请号：US16088465

申请日：2017-03-30

Applicant: Sumitomo Chemical Company, Limited ,  Riken

Inventor： Satoshi Shimano ,  Yasujiro Taguchi ,  Yoshinori Tokura

IPC: H01L35/16 ,  H01L35/34 ,  C22C28/00 ,  C01B19/00 ,  H01L35/32

Abstract: The present invention relates to a compound containing at least germanium, tellurium, bismuth and copper as constituent elements, wherein the longest axis of ubiquitous bismuth crystals and copper crystals is less than 2.0 μm.

公开(公告)号：US20210175405A1

公开(公告)日：2021-06-10

申请号：US17034214

申请日：2020-09-28

Applicant: Hyundai Motor Company ,  Kia Motors Corporation

Inventor： Hoo Dam Lee ,  Byung Wook Kim ,  Jin Woo Kwak ,  Min Jae Lee ,  Woo Ju Lee ,  Yoon Jin Kim ,  Young Sun Kim

IPC: H01L35/34 ,  H01L35/26 ,  H01L35/08

Abstract: A thermoelectric material includes a lower part from a bottom surface of the thermoelectric material to a point of 30% of an average thickness of the thermoelectric material and having an average content of carbon atoms of 40 at % or more in the thermoelectric material, and an upper part corresponding to a remaining 70% of the average thickness of the thermoelectric material and having an average content of carbon atoms of 20 at % or less in the thermoelectric material.

公开(公告)号：US20210151653A1

公开(公告)日：2021-05-20

申请号：US16687722

申请日：2019-11-19

Applicant: International Business Machines Corporation

Inventor： Steven J. Holmes ,  Devendra K. Sadana ,  Stephen W. Bedell ,  Ning Li

IPC: H01L35/04 ,  H01L35/34 ,  H01L27/18 ,  H01L23/34 ,  H01L25/18

Abstract: An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.

公开(公告)号：US20210135079A1

公开(公告)日：2021-05-06

申请号：US16477235

申请日：2018-01-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Seung Yong LEE ,  Chang Eun KIM ,  Jin Suk LEE

IPC: H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  B22F3/16

Abstract: A thermoelectric sintered body according to an embodiment comprises thermoelectric powder, the thermoelectric powder, arranged in a horizontal direction, comprising: a plurality of first powders in the shape of plate-type flakes; and a plurality of second powders in a shape different from that of the first powders, wherein the second powders comprise 5 volume % or less of the total thermoelectric powder.

公开(公告)号：US20210135078A1

公开(公告)日：2021-05-06

申请号：US16482522

申请日：2018-02-06

Applicant: LG INNOTEK CO., LTD.

Inventor： Myoung Seok SUNG ,  Tae Hee KIM

IPC: H01L35/10 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric element according to an embodiment comprises: a first substrate; a first electrode part disposed on the first substrate; a thermoelectric semiconductor disposed on the first electrode part; second electrode parts disposed on the thermoelectric semiconductor; and a second substrate disposed on the second electrode parts, wherein the second substrate comprises: a first surface; and a second surface opposite to the first surface, the second electrode parts are disposed on the first surface, a terminal electrode part formed by extending at least one of the second electrode parts is disposed on the second surface, and the second substrate is formed between the terminal electrode part and the second electrode parts.

公开(公告)号：US10991869B2

公开(公告)日：2021-04-27

申请号：US16377091

申请日：2019-04-05

Applicant: Gentherm Incorporated

Inventor： Vladimir Jovovic ,  Eric Poliquin

IPC: H01L35/32 ,  H01L35/02 ,  H01L35/30 ,  H01L35/34 ,  H01L35/04

Abstract: A thermoelectric device includes a thermally conductive first plate and at least one thermoelectric sub-assembly comprises a thermally conductive second plate and a plurality of thermoelectric elements in a region between the first plate and the second plate. The at least one thermoelectric sub-assembly further includes a first material along a first portion of a perimeter of the region and having a first stiffness and a second material along a second portion of the perimeter of the region and having a second stiffness less than the first stiffness.

公开(公告)号：US20210111328A1

公开(公告)日：2021-04-15

申请号：US17075340

申请日：2020-10-20

Applicant: The Regents of The University of Michigan

Inventor： Pierre Ferdinand POUDEU-POUDEU ,  Alan OLVERA

IPC: H01L35/26 ,  H01L35/34 ,  H01L35/32 ,  H01L35/16

Abstract: A thermoelectric composition is provided that includes a nanocomposite comprising a copper selenide (Cu2Se) matrix having a plurality of nanoinclusions comprising copper metal selenide (CuMSe2) distributed therein. M may be selected from the group consisting of: indium (In), aluminum (Al), gallium (Ga), antimony (Sb), bismuth (Bi), and combinations thereof. The thermoelectric composition has an average figure of merit (ZT) of greater than or equal to about 1.5 at a temperature of less than or equal to about 850K (about 577° C.). Methods of making such a thermoelectric nanocomposite material by a sequential solid-state transformation of a CuSe2 precursor are also provided.

公开(公告)号：US20210101839A1

公开(公告)日：2021-04-08

申请号：US17054625

申请日：2019-06-14

Applicant: Drexel University ,  THE PENN STATE RESEARCH FOUNDATION

Inventor： Yury GOGOTSI ,  Babak ANASORI ,  Benjamin LEGUM ,  Pavel S. LELYUKH ,  Clive Alan RANDALL ,  Jing GUO ,  Ke WANG

IPC: C04B35/56 ,  C04B35/453 ,  C04B35/645 ,  H01L35/26 ,  H01L35/34

Abstract: The present disclosure is directed to nanocomposites comprising a co-sintered composition of a MXene crystal form composition and an inorganic oxide, or oxide-type ceramic and methods of making and using the same.