公开(公告)号：US20050057168A1

公开(公告)日：2005-03-17

申请号：US10923818

申请日：2004-08-24

Applicant: Yoon Song ,  Chi Hwang ,  Kwang Kim

Inventor： Yoon Song ,  Chi Hwang ,  Kwang Kim

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  H01J7/24

CPC classification number: H01J3/022

Abstract: A field emission device including a cathode having an electric field emitter for emitting electrons, a field emission inducing gate for inducing electron emission, and an anode for receiving the emitted electrons. A field emission suppressing gate is interposed between the cathode and the field emission inducing gate for suppressing electron emission, so that problems such as gate leakage current, electron emission due to anode voltage, and electron beam spreading of the conventional field emission device are significantly overcome.

Abstract translation: 包括具有用于发射电子的电场发射体的阴极，用于感应电子发射的场致发射栅和用于接收发射的电子的阳极的场致发射装置。 在阴极和用于抑制电子发射的场致发射栅之间插入场致发射抑制栅极，从而显着地克服了常规场致发射器件中的栅极漏电流，由阳极电压引起的电子发射和电子束扩散等问题 。

公开(公告)号：US06858990B2

公开(公告)日：2005-02-22

申请号：US10235809

申请日：2002-09-06

Applicant: Takeo Tsukamoto

Inventor： Takeo Tsukamoto

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  G09G3/10

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469

Abstract: In an electron-emitting device having an electron-emitting member containing carbon as a main component, and an extraction electrode arranged near the electron-emitting member, electrons can be emitted by substantially only a region of the electron-emitting member close to the extraction electrode. Brightness nonuniformity and abnormal lights-on errors are reduced in an image forming apparatus in which the electron-emitting devices are constituted into an electron. The electron-emitting threshold field of the electron-emitting member is set low at a portion close to the extraction electrode and high at a portion apart from the extraction electrode.

公开(公告)号：US20050001530A1

公开(公告)日：2005-01-06

申请号：US10891277

申请日：2004-07-14

Applicant: Huei-Pei Kuo ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

Inventor： Huei-Pei Kuo ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

IPC: H01J1/312 ,  G11B9/00 ,  G11B9/10 ,  H01J3/02 ,  H01J3/18 ,  H01J1/02 ,  H01L29/06

CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/1409 ,  H01J3/02 ,  H01J2201/308

Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

Abstract translation: 电子源包括用于产生电子发射的平面发射区域和用于将电子发射聚焦成电子束的聚焦结构。

公开(公告)号：USH2010H

公开(公告)日：2002-01-01

申请号：US39786095

申请日：1995-03-02

Applicant: USA

Inventor： NGUYEN KHANH T ,  SMITHE DAVID N

IPC: H01J23/07 ,  H01J3/02

CPC classification number: H01J23/07 ,  H01J2225/025

Abstract: A gyrotron gun that generates gyrating electron beams in a controllable manner suitable for use in a wide range of gyro-amplifiers and gyro-oscillators is disclosed. The gyrotron comprises first and second means for abruptly changing a magnetic field and which means are positioned between first, second and third field coils. The field coils are operated so as to provide for a desired magnetic field profile that allows for the control of the parameters desired to provide for small-orbit, large-orbit, and linear modes of operation of the gyrotron gun. The gyrotron gun further comprises of a pair of bucking coils arranging near the cathode to independently control the axial velocity spread of the gyrating electron beam.

Abstract translation: 公开了一种以可控制的方式产生旋转电子束的陀螺仪枪，其适用于广泛的陀螺仪和陀螺仪。 陀螺仪包括用于突然改变磁场的第一和第二装置，并且哪个装置位于第一，第二和第三场线圈之间。 操作励磁线圈以提供期望的磁场分布，其允许控制所需的参数以提供陀螺仪枪的小轨道，大轨道和线性操作模式。 陀螺仪枪还包括布置在阴极附近的独立控制旋转电子束的轴向速度扩展的一对降压线圈。

公开(公告)号：US6147456A

公开(公告)日：2000-11-14

申请号：US311108

申请日：1999-05-13

Applicant: John L. Janning

Inventor： John L. Janning

IPC: H01J3/02 ,  H01J29/02 ,  H01J29/06 ,  H01J29/08 ,  H01J29/46 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J29/085 ,  H01J29/023 ,  H01J29/06 ,  H01J29/467 ,  H01J3/022 ,  H01J31/123 ,  H01J31/127 ,  H01J2201/32

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

Abstract translation: 阴极发光场致发射显示装置具有荧光偏置，用于二次电子发射的放大材料层，氧化物二次发射增强层和氮化硅的离子阻挡层，以提供具有改进的操作特性和耐久性的高效率，高亮度场致发射显示器。 扩增材料包括铜 - 钡，铜 - 铍，金 - 钡，金 - 钙，银 - 镁和钨 - 钡 - 金，以及其他高放大因子材料，用于在场发射显示器内产生高级二次电子发射 设备。 对于增强的二次电子发射，可以用基本上由钡，铍，钙，镁或锶的氧化物组成的近单分子膜涂覆扩增材料层。 在本公开中进一步描述了使用高放大因子膜作为荧光体偏置电极，以及荧光体偏置电位的变化以实现亮度或灰度级控制。

公开(公告)号：US6137214A

公开(公告)日：2000-10-24

申请号：US431015

申请日：1999-11-01

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J9/025

Abstract: A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.

Abstract translation: 一种场致发射器件，具有其中纳米晶体或微晶硅层位于二氧化硅电介质层上方的栅电极结构。 还公开了形成场发射装置的方法。 纳米晶体或微晶硅层与电介质层形成结合，其足够强以防止在形成场致发射器件期间进行的化学 - 机械平面化操作期间的分层。 纳米晶体或微晶硅层通过PECVD在含有硅烷和氢气的气氛中以约1:15至约1:40的比例沉积。 可以形成多个场致发射器件并将其包括在用于计算机监视器，电信设备等的平板显示器中。

公开(公告)号：US6127779A

公开(公告)日：2000-10-03

申请号：US188467

申请日：1998-11-09

Applicant: Richard Brownell True

Inventor： Richard Brownell True

IPC: H01J31/02 ,  H01J3/02 ,  H01J19/32 ,  H01J19/70 ,  H01J19/74 ,  H01J21/10 ,  H01J21/14 ,  H01J23/07 ,  H01J1/46

CPC classification number: H01J3/027 ,  H01J21/10 ,  H01J23/07

Abstract: A high power switching apparatus comprises an annular cathode having a surface capable of emitting a hollow electron beam therefrom and an anode cavity spaced from said cathode. The cavity has an annular opening smaller in dimension than a corresponding internal dimension that defines the cavity to provide a Faraday cage collector of the hollow electron beam. A control electrode, disposed between the cathode and the anode cavity in a non-intercepting position relative to the hollow electron beam, provides a controlling electric field region for modulation of the hollow electron beam. Arc suppressing electrodes, at approximately the same potential as the cathode, are disposed between the control electrode and the anode. An intermediate high voltage electrode, disposed between the arc suppressing electrodes and the anode cavity in a non-intercepting position relative to the hollow electron beam, provides a controlling electric field region for channeling of the hollow electron beam. The intermediate high voltage electrode maintains a positive voltage with respect to the cathode in order to provide an intermediate voltage step between the cathode and the anode in the off state and to channel the hollow electron beam towards the anode in the on state. A voltage, positive with respect to the cathode, is applied to the control electrode in order to draw the hollow electron beam from the emitting surface of the cathode and into the anode. The potential of the anode is generally positive with respect to the cathode, however, it need not be at a potential as high as that of the control electrode, especially when electrons are being drawn from the cathode.

Abstract translation: 大功率开关装置包括具有能够从其中发射中空电子束的表面和与所述阴极间隔开的阳极腔的环形阴极。 空腔具有尺寸小于限定空腔的相应内部尺寸的环形开口，以提供空心电子束的法拉第笼式收集器。 设置在阴极和阳极腔之间的控制电极相对于中空电子束处于非截止位置，提供用于调制中空电子束的控制电场区域。 与控制电极和阳极之间设置与阴极大致相同的电弧抑制电极。 在相对于中空电子束处于非截止位置的电弧抑制电极和阳极腔之间设置的中间高压电极提供用于引导空心电子束的控制电场区域。 中间高压电极相对于阴极保持正电压，以便在断开状态下在阴极和阳极之间提供中间电压阶梯，并且在导通状态下将空心电子束通向阳极。 将相对于阴极正电压的电压施加到控制电极，以便从阴极的发射表面引入中空电子束并进入阳极。 阳极的电位对于阴极通常是正的，然而，其不需要处于与控制电极的电位相同的电位，特别是当从阴极吸取电子时。

公开(公告)号：US6124665A

公开(公告)日：2000-09-26

申请号：US345112

申请日：1999-07-06

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J3/02 ,  H01J9/02 ,  H01J1/02

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2329/00

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the resent invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array. A second mask is employed to facilitate the removal of passivation material and conductive material from the desired areas of pixel openings. The present invention also includes field emission arrays having a semiconductive grid and a relatively thin passivation layer exposed between adjacent row lines.

Abstract translation: 一种在场发射阵列上制造行线的方法。 该方法仅采用两个掩模步骤来通过每条行线的选定区域来定义行线和像素开口。 根据本发明的方法，将导电材料层设置在半导体材料格栅的基本上平坦化的表面上。 然后将一层钝化材料设置在导电材料层上。 在该方法的一个实施例中，可以使用第一掩模来从相邻的像素行之间以及从场发射阵列的每个像素的大致上方去除钝化材料和导电材料。 采用第二掩模从相邻的像素行之间移除半导体材料。 在该方法的另一个实施例中，使用第一掩模以便于从场致发射阵列的相邻行像素之间移除钝化材料，导电材料和半导体材料。 使用第二掩模来促进从像素开口的期望区域去除钝化材料和导电材料。 本发明还包括具有半导电栅格的场发射阵列和暴露在相邻行线之间的相对薄的钝化层。

公开(公告)号：US6107728A

公开(公告)日：2000-08-22

申请号：US71465

申请日：1998-04-30

Applicant: Christopher J. Spindt ,  John E. Field ,  Theodore S. Fahlen

Inventor： Christopher J. Spindt ,  John E. Field ,  Theodore S. Fahlen

IPC: H01J9/42 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2329/00

Abstract: An electrode (12 or 30) of an electron-emitting device has a plurality of openings (16 or 60) spaced laterally apart from one another. The openings can be used, as needed, in selectively separating one or more parts of the electrode from the remainder of the electrode during corrective test directed towards repairing any short-circuit defects that may exist between the electrode and other overlying or underlying electrodes. When the electrode with the openings is an emitter electrode (12), each opening (16) normally extends fully across an overlying control electrode (30). When the electrode with the openings is a control electrode (30), each opening (60) normally extends fully across an underlying emitter electrode (12). The short-circuit repair procedure typically entails directing light energy on appropriate portions of the electrode with the openings.

Abstract translation: 电子发射器件的电极（12或30）具有彼此横向间隔开的多个开口（16或60）。 根据需要，可以在校正试验期间选择性地将电极的一个或多个部分与电极的其余部分分离开来，以修复可能存在于电极和其它上覆或下面的电极之间的任何短路缺陷。 当具有开口的电极是发射电极（12）时，每个开口（16）通常完全穿过覆盖的控制电极（30）延伸。 当具有开口的电极是控制电极（30）时，每个开口（60）通常完全穿过下面的发射电极（12）延伸。 短路修复程序通常需要将光能引导到具有开口的电极的适当部分上。

公开(公告)号：US6091188A

公开(公告)日：2000-07-18

申请号：US50636

申请日：1998-03-27

Applicant: Yoshinori Tomihari ,  Fumihiko Matsuno

Inventor： Yoshinori Tomihari ,  Fumihiko Matsuno

IPC: H01J1/304 ,  H01J3/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/30403

Abstract: There is provided a field emission cold cathode including a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an electrically conductive gate electrode layer formed on the insulating layer, a plurality of cavities being formed throughout both the insulating layer and the gate electrode layer, a conical emitter formed on the semiconductor substrate in each one of the cavities, and an insulating wall formed at least in the semiconductor substrate so that the insulating wall surrounds each one of the cavities. The insulating wall partitions the semiconductor substrate into a first group of blocks located at a marginal end of the semiconductor substrate and a second group of blocks located within the first group of blocks. Each one of the first group of blocks is designed to have a greater area than an area of each one of the second group of blocks. The field emission cold cathode makes it possible to uniformize an emission current in all of the blocks to thereby provide uniform brightness to images in a display area.

Abstract translation: 提供一种场致发射冷阴极，包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上的导电栅电极层，在绝缘层和栅电极层两端形成的多个空腔 ，形成在每个空腔中的半导体衬底上的锥形发射体，以及至少在半导体衬底中形成的绝缘壁，使得绝缘壁围绕每个空腔。 绝缘壁将半导体衬底分隔成位于半导体衬底的边缘端的第一组块和位于第一组块内的第二组块。 第一组块中的每一个被设计成具有比第二组块中的每个块的区域更大的面积。 场致发射冷阴极使得可以使所有块中的发射电流均匀化，从而为显示区域中的图像提供均匀的亮度。