公开(公告)号：US20150309404A1

公开(公告)日：2015-10-29

申请号：US14260651

申请日：2014-04-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Yun-Yue LIN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Anthony YEN

IPC: G03F1/62 ,  G03F1/00

CPC classification number: G03F1/62 ,  G03F1/142 ,  G03F1/64

Abstract: A pellicle structure, a pellicle-mask structure, and a method for forming the pellicle structure are provided. The pellicle structure includes a pellicle film made of a carbon-based material. In addition, the pellicle film is configured to protect a mask structure in a lithography process. The pellicle-mask structure includes a mask substrate having a mask pattern formed over the mask substrate and the pellicle frame disposed on the mask substrate. The pellicle-mask structure further includes the pellicle film disposed on the pellicle frame.

Abstract translation: 提供防护薄膜组件，防护薄膜组件，以及防护薄膜组件的形成方法。 防护薄膜组件包括由碳基材料制成的防护薄膜。 此外，防护薄膜被配置为在光刻工艺中保护掩模结构。 防护薄膜组件包括具有形成在掩模基板上的掩模图案和设置在掩模基板上的防护膜框架的掩模基板。 防护薄膜组件还包括设置在防护薄膜组件框架上的防护薄膜。

公开(公告)号：US20150309401A1

公开(公告)日：2015-10-29

申请号：US14261809

申请日：2014-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Anthony YEN

IPC: G03F1/22 ,  G03F1/46

CPC classification number: G03F1/22 ,  G03F1/46

Abstract: A lithography system for an extreme ultra violet (EUV) mask is provided. The lithography system includes a coupling module. The coupling module includes at least one mask contact element configured to touch a peripheral area of the EUV mask. The lithography system also includes an ammeter having an end electrically connected to the EUV mask through the at least one mask contact element and another end connected to a ground potential. The ammeter includes a sensor configured to measure a current conducting from the EUV mask to the ground potential and a compensation circuit configured to provide a compensation current that is opposite to the current measured by the sensor.

Abstract translation: 提供了用于极紫外（EUV）掩模的光刻系统。 光刻系统包括耦合模块。 耦合模块包括被配置为触摸EUV掩模的外围区域的至少一个掩模接触元件。 光刻系统还包括电流表，其具有通过至少一个掩模接触元件电连接到EUV掩模的端部，另一端连接到接地电位。 电流表包括传感器，其被配置为测量从EUV掩模传导到地电位的电流;以及补偿电路，其被配置为提供与由传感器测量的电流相反的补偿电流。