Abstract:
A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element separately from and at the same time as the first plasma; adding the vaporized metal organic compound and the plasma of the auxiliary material to the plasma of the V group element; and forming, on a substrate, a film of a semiconductor compound containing the III group element and the V group element. A semiconductor and a semiconductor device having high quality and high functions can be manufactured in a short time at high yield. An amorphous material includes at least hydrogen, a III Group element, preferably gallium, and nitrogen. In the infrared absorption spectrum measured of the amorphous material, the ratio of the absorbance I.sub.N-H, at the absorption peak indicating the bond (N--H) between nitrogen and hydrogen to that, I.sub.C-H, at the absorption peak indicating the bond (C--H) between carbon and hydrogen is 2 or more; and the ratio of the absorbance, I.sub.N-H, at the absorption peak indicating the bond (N--H) between nitrogen and hydrogen to the absorbance, I.sub.III-H, at the absorption peak indicating the bond (III-H) between the III Group element and hydrogen is 0.2 or more.
Abstract:
An electrophotographic photoreceptor and process for preparing the same, the photoreceptor comprising a conductive substrate having thereon a photoconductive layer and a surface layer in this order, the photoconductive layer comprising amorphous silicon containing at least one of hydrogen and a halogen, and the surface layer comprising a dried and/or cured product under a reduced pressure of an inorganic or organic high molecular weight material containing fine particles of a conductive metal oxide dispersed therein.
Abstract:
An electrophotographic photoreceptor is disclosed, comprising at least a substrate having thereon a charge transporting layer and a charge generating layer, wherein the charge transporting layer is a porous anodized aluminum film which is formed by anodizing a substrate at least a surface of which comprises aluminum or an aluminum alloy, with a conductive substance formed from an oxyacid salt of a transition metal being deposited to the inner wall of the pores thereof. The photoreceptor is excellent in physical properties, electrophotographic characteristics, and adhesion between the charge transporting layer and charge generating layer.
Abstract:
An electorphotographic photoreceptor comprises an electroconductive support at least whose indentation hardness of surface is 100 and over on the Vickers hardness scale; a photoconductive layer comprising amorphous silicon containing at least one of hydrogen and halogen; and a surface layer comprising at least one of an amorphous silicon layer containing at least one of nitrogen, oxygen, and carbon, and an amorphous carbon layer containing at least one of not exceeding 50 atm. % of hydrogen and halogen. This photoreceptor is long-lived and causing no image defects that would otherwise develop in connection with the support, and it can be applied to an energy-saving, low-cost and highly reliable electrophotographic process and apparatus.
Abstract:
An electrophotographic photoreceptor comprising a conductive support having thereon an amorphous silicon photoconductive layer and a surface protective layer is disclosed, the surface protective layer having a laminated structure comprised of a lower layer comprising nitrogen-containing amorphous silicon and an upper layer comprising amorphous carbon.The photoreceptor causes no image deletion even after repeated use under a high temperature and high humidity condition and exhibits excellent scratch resistance.
Abstract:
An electrophotographic photoreceptor having a light-sensitive layer formed on an electrically conductive substrate is disclosed, which contains at least a layer chiefly made of a germanium-containing amorphous carbon as a light-sensitive layer or an anti-reflection layer.
Abstract:
An electrophotographic photoreceptor is disclosed which comprises a support having provided thereon a charge generating layer containing silicon as a main component and a charge transport layer containing as a main component an oxide of at least one element selected from aluminum, zirconium, and tantalum, said charge generating layer and charge transport layer being adjacent to each other. The photoreceptor has a charging capacity of about 50 V/.mu.m or more and a rate of dark decay of 15%/sec or less.
Abstract:
An electrophotographic photoreceptor comprising at least a substrate, an electrical charge generating layer, and an electrical charge transporting layer, wherein the electrical charge transporting layer comprises a material selected from the group consisting of an oxide, carbide, and nitride of aluminum, and a mixture of two or more of the foregoing, the selected material being combined with a transition metal element.
Abstract:
An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.
Abstract:
An electrophotographic photosensitive material is disclosed. The material is comprised of a conductive support base. On the surface of the base is a photoconductive layer. On a surface of the photoconductive layer is an interlayer comprised of organic metal compound as its main component. On top of the interlayer is a low-resistant protective layer. The material can achieve electrostatic contrast greatly superior to that of conventional photosensitive materials.