Process for manufacturing semiconductor, apparatus for manufacturing
semiconductor, and amorphous material
    51.
    发明授权
    Process for manufacturing semiconductor, apparatus for manufacturing semiconductor, and amorphous material 失效
    半导体制造方法,半导体制造装置和无定形材料

    公开(公告)号:US5976398A

    公开(公告)日:1999-11-02

    申请号:US922595

    申请日:1997-09-03

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    CPC classification number: H01L33/18

    Abstract: A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element separately from and at the same time as the first plasma; adding the vaporized metal organic compound and the plasma of the auxiliary material to the plasma of the V group element; and forming, on a substrate, a film of a semiconductor compound containing the III group element and the V group element. A semiconductor and a semiconductor device having high quality and high functions can be manufactured in a short time at high yield. An amorphous material includes at least hydrogen, a III Group element, preferably gallium, and nitrogen. In the infrared absorption spectrum measured of the amorphous material, the ratio of the absorbance I.sub.N-H, at the absorption peak indicating the bond (N--H) between nitrogen and hydrogen to that, I.sub.C-H, at the absorption peak indicating the bond (C--H) between carbon and hydrogen is 2 or more; and the ratio of the absorbance, I.sub.N-H, at the absorption peak indicating the bond (N--H) between nitrogen and hydrogen to the absorbance, I.sub.III-H, at the absorption peak indicating the bond (III-H) between the III Group element and hydrogen is 0.2 or more.

    Abstract translation: 一种制造半导体的方法,包括从V族元件源产生V族元素的第一等离子体; 产生辅助材料的第二等离子体,用于与第一等离子体分开并同时激活含有III族元素的金属有机化合物; 将蒸发的金属有机化合物和辅助材料的等离子体加入到V族元素的等离子体中; 以及在衬底上形成含有III族元素和V族元素的半导体化合物的膜。 可以在短时间内以高产率制造具有高质量和高功能的半导体和半导体器件。 非晶材料至少包括氢,III族元素,优选镓和氮。 在无定形材料测量的红外吸收光谱中,在吸收峰处表示氮和氢之间的键(NH)的吸光度IN-H与IC-H在吸收峰处的比例(表示键(CH )为2以上; 并且在吸收峰处表示氮和氢之间的键(NH)的吸光度的吸光度IN-H与在吸收峰处的吸光度IIII-H的比率表示III族元素之间的键(III-H) 氢为0.2以上。

    Electrophotographic photoreceptor and process for producing the same
    53.
    发明授权
    Electrophotographic photoreceptor and process for producing the same 失效
    电子照相感光体及其制造方法

    公开(公告)号:US5397666A

    公开(公告)日:1995-03-14

    申请号:US182367

    申请日:1994-01-18

    CPC classification number: G03G5/0436 G03G5/047 G03G5/082

    Abstract: An electrophotographic photoreceptor is disclosed, comprising at least a substrate having thereon a charge transporting layer and a charge generating layer, wherein the charge transporting layer is a porous anodized aluminum film which is formed by anodizing a substrate at least a surface of which comprises aluminum or an aluminum alloy, with a conductive substance formed from an oxyacid salt of a transition metal being deposited to the inner wall of the pores thereof. The photoreceptor is excellent in physical properties, electrophotographic characteristics, and adhesion between the charge transporting layer and charge generating layer.

    Abstract translation: 公开了一种电子照相感光体,其至少包括其上具有电荷输送层和电荷产生层的基底,其中所述电荷输送层是多孔阳极氧化铝膜,所述多孔阳极氧化铝膜通过阳极氧化底物形成,所述基底的至少表面包括铝或 具有由过渡金属的含氧酸盐形成的导电物质沉积到其孔的内壁上的铝合金。 感光体的物理性质,电子照相特性以及电荷输送层与电荷产生层之间的粘附性优异。

    Electrophotographic photoreceptor with oxide of Al, Zr or Ta as charge
transport layer
    57.
    发明授权
    Electrophotographic photoreceptor with oxide of Al, Zr or Ta as charge transport layer 失效
    具有Al,Zr或Ta氧化物的电子照相感光体作为电荷传输层

    公开(公告)号:US5075187A

    公开(公告)日:1991-12-24

    申请号:US573290

    申请日:1990-08-27

    CPC classification number: G03G5/0433

    Abstract: An electrophotographic photoreceptor is disclosed which comprises a support having provided thereon a charge generating layer containing silicon as a main component and a charge transport layer containing as a main component an oxide of at least one element selected from aluminum, zirconium, and tantalum, said charge generating layer and charge transport layer being adjacent to each other. The photoreceptor has a charging capacity of about 50 V/.mu.m or more and a rate of dark decay of 15%/sec or less.

    Abstract translation: 公开了一种电子照相感光体,它包括一个载体,其上提供了含有硅作为主要成分的电荷产生层和电荷传输层,该电荷传输层含有选自铝,锆和钽中至少一种元素的氧化物作为主要成分,所述电荷 生成层和电荷传输层彼此相邻。 感光体具有约50V /μm以上的充电容量和15%/秒以下的暗衰减率。

    Electrophotographic photoreceptor with inorganic compound in charge
transport layer
    58.
    发明授权
    Electrophotographic photoreceptor with inorganic compound in charge transport layer 失效
    电子照相感光体与电荷传输层中的无机化合物

    公开(公告)号:US5041350A

    公开(公告)日:1991-08-20

    申请号:US393952

    申请日:1989-08-15

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    CPC classification number: G03G5/082 G03G5/0433 G03G5/085

    Abstract: An electrophotographic photoreceptor comprising at least a substrate, an electrical charge generating layer, and an electrical charge transporting layer, wherein the electrical charge transporting layer comprises a material selected from the group consisting of an oxide, carbide, and nitride of aluminum, and a mixture of two or more of the foregoing, the selected material being combined with a transition metal element.

    Abstract translation: 一种电子照相感光体,包括至少一个基底,电荷产生层和电荷输送层,其中电荷输送层包括选自由铝,氧化物,碳化物和氮化物组成的组的材料,以及混合物 所选择的材料与过渡金属元素组合。

    Electrophotographic photoreceptor having surface layers
    59.
    发明授权
    Electrophotographic photoreceptor having surface layers 失效
    具有表面层的电子照相感光体

    公开(公告)号:US4965154A

    公开(公告)日:1990-10-23

    申请号:US368103

    申请日:1989-06-19

    CPC classification number: G03G5/08235

    Abstract: An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.

    Abstract translation: 一种电子照相感光体,包括光电导层,第一表面层和在支撑体上依次形成的第二表面层,所述光电导层基本上由非晶硅组成,并且所述第一和第二表面层中的每一个基本上由氮掺杂 非晶硅中,第二表面层中的氮原子浓度高于第一表面层中的氮原子浓度。 光电导层掺杂有III族元素的原子,或掺杂有锗原子的光电导层的至少一部分代替III族元素。

    Electrophotographic photosensitive materials having layer of organic
metal compound
    60.
    发明授权
    Electrophotographic photosensitive materials having layer of organic metal compound 失效
    具有有机金属化合物层的电子照相感光材料

    公开(公告)号:US4444862A

    公开(公告)日:1984-04-24

    申请号:US402700

    申请日:1982-07-28

    CPC classification number: G03G5/14 G03G5/142 G03G5/147

    Abstract: An electrophotographic photosensitive material is disclosed. The material is comprised of a conductive support base. On the surface of the base is a photoconductive layer. On a surface of the photoconductive layer is an interlayer comprised of organic metal compound as its main component. On top of the interlayer is a low-resistant protective layer. The material can achieve electrostatic contrast greatly superior to that of conventional photosensitive materials.

    Abstract translation: 公开了一种电子照相感光材料。 该材料由导电支撑基座构成。 在基底的表面是光电导层。 在光电导层的表面上是由有机金属化合物作为其主要成分的中间层。 在中间层的顶部是低电阻保护层。 该材料可以实现静电对比度大大优于传统感光材料。

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