公开(公告)号：US11957046B2

公开(公告)日：2024-04-09

申请号：US16562601

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Gyu Han ,  Dae Young Chung ,  Kwanghee Kim ,  Eun Joo Jang ,  Chan Su Kim ,  Kun Su Park ,  Won Sik Yoon

IPC: H10K85/60 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K71/00 ,  H10K71/12 ,  H10K102/00

CPC classification number: H10K85/633 ,  H10K85/6572 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K71/00 ,  H10K71/12 ,  H10K2102/331 ,  H10K2102/351

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

公开(公告)号：US11765918B2

公开(公告)日：2023-09-19

申请号：US17007021

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kun Su Park ,  Chan Su Kim ,  Kwanghee Kim ,  Eun Joo Jang

IPC: H10K50/115 ,  H10K50/16 ,  H10K50/17 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/16 ,  H10K50/171 ,  H10K2102/00

Abstract: A light emitting device includes an emission layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the emission layer, the electron auxiliary layer to transport electrons to the emission layer, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles, wherein the metal oxide nanoparticles include zinc and a dopant metal, wherein the dopant metal includes Mg, Mn, Ni, Sn, Al, Y, Ga, Zr, Ni, Li, Co, or a combination thereof, wherein the dopant metal in at least one of the metal oxide nanoparticles is included in the metal oxide nanoparticle to have a concentration gradient of the dopant metal.

公开(公告)号：US11758746B2

公开(公告)日：2023-09-12

申请号：US17892564

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Park ,  Yuho Won ,  Eun Joo Jang ,  Dae Young Chung ,  Sung Woo Kim ,  Jin A Kim ,  Yong Seok Han

IPC: H01L51/50 ,  H10K50/115 ,  H10K50/15 ,  H10K85/10 ,  H10K50/16 ,  H10K71/15 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/15 ,  H10K85/115 ,  H10K85/1135 ,  H10K50/16 ,  H10K71/15 ,  H10K2102/331 ,  H10K2102/351

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

公开(公告)号：US11739263B2

公开(公告)日：2023-08-29

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/08 ,  C09K11/56 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/0805 ,  C09K11/562 ,  C09K11/88 ,  G02B6/005 ,  G02F1/133617 ,  H01L27/322 ,  H01L27/3244 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US11713418B2

公开(公告)日：2023-08-01

申请号：US17558774

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Hwea Yoon Kim ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C01G9/00 ,  H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K102/00

CPC classification number: C09K11/883 ,  C01G9/006 ,  C09K11/025 ,  H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/60 ,  H10K50/115 ,  H10K2102/00

Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

公开(公告)号：US11706936B2

公开(公告)日：2023-07-18

申请号：US18048484

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Moon Gyu Han ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/88 ,  H10K71/00 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: H10K50/115 ,  C09K11/02 ,  C09K11/883 ,  H10K71/00 ,  B82Y20/00 ,  B82Y40/00

Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

公开(公告)号：US11674078B2

公开(公告)日：2023-06-13

申请号：US17401410

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/62 ,  H10K50/115 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335 ,  H01L51/50

CPC classification number: C09K11/025 ,  C09K11/623 ,  G02F1/133615 ,  G02F1/133617 ,  H01L51/502 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US11611054B2

公开(公告)日：2023-03-21

申请号：US17199977

申请日：2021-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae Lee ,  Moon Gyu Han ,  Won Sik Yoon ,  Eun Joo Jang ,  Dae Young Chung ,  Tae Hyung Kim ,  Hyo Sook Jang

IPC: H01L51/50

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.

公开(公告)号：US11581501B2

公开(公告)日：2023-02-14

申请号：US16441660

申请日：2019-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

Inventor： Tae Gon Kim ,  Tianshuo Zhao ,  Nuri Oh ,  Cherie Kagan ,  Eun Joo Jang ,  Christopher Murray

IPC: H01L51/42 ,  B82Y30/00 ,  H01L31/0232

Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

公开(公告)号：US11575099B2

公开(公告)日：2023-02-07

申请号：US17030543

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Hwea Yoon Kim ,  Yeonkyung Lee ,  Eun Joo Jang

IPC: H01L51/50

Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.