公开(公告)号：US20220173342A1

公开(公告)日：2022-06-02

申请号：US17671970

申请日：2022-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Kwanghee KIM ,  Eun Joo JANG ,  Tae Hyung KIM ,  Hongkyu SEO ,  Heejae LEE ,  Jaejun CHANG

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

公开(公告)号：US20220149307A1

公开(公告)日：2022-05-12

申请号：US17522316

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee KIM ,  Hongkyu SEO ,  Won Sik YOON ,  Oul CHO ,  Tae Hyung KIM ,  Jaeyong LEE ,  Eun Joo JANG

IPC: H01L51/50 ,  H01L51/00

Abstract: A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound.

公开(公告)号：US20220089950A1

公开(公告)日：2022-03-24

申请号：US17543197

申请日：2021-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/56

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

公开(公告)号：US20220081614A1

公开(公告)日：2022-03-17

申请号：US17532439

申请日：2021-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee LEE ,  Hyun A KANG ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/02 ,  C01B19/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US20210296608A1

公开(公告)日：2021-09-23

申请号：US17199977

申请日：2021-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae LEE ,  Moon Gyu HAN ,  Won Sik YOON ,  Eun Joo JANG ,  Dae Young CHUNG ,  Tae Hyung KIM ,  Hyo Sook JANG

IPC: H01L51/50

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.

公开(公告)号：US20210240428A1

公开(公告)日：2021-08-05

申请号：US17234434

申请日：2021-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyoung KIM ,  Woonghee PARK ,  Saetbyeol LEE ,  Bongkyu KIM ,  Tae Hyung KIM ,  Hyung-Jun AHN ,  Kwang-Yong LEE ,  Sang-Hun LEE

IPC: G06F3/14 ,  G06F3/0481 ,  G06F3/0482 ,  G06F3/0484

Abstract: An example method of an electronic device according to various embodiments of the present disclosure may include indicating that a first screen related to a first application operating in a background state is being displayed in an external electronic device, connected to the electronic device, based on data transmitted from the electronic device; and displaying an object floating on a second screen being displayed on the electronic device.

公开(公告)号：US20210202869A1

公开(公告)日：2021-07-01

申请号：US17193283

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: H01L51/50

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US20210102119A1

公开(公告)日：2021-04-08

申请号：US17036122

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG ,  Heejae CHUNG ,  Oul CHO

IPC: C09K11/88 ,  C09K11/08 ,  H01L51/50

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US20210066543A1

公开(公告)日：2021-03-04

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C01B19/04 ,  C09K11/88

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US20200313106A1

公开(公告)日：2020-10-01

申请号：US16832004

申请日：2020-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee KIM ,  Dae Young CHUNG ,  Tae Hyung KIM ,  Eun Joo JANG ,  Moon Gyu HAN

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.