公开(公告)号：US20230052686A1

公开(公告)日：2023-02-16

申请号：US17969420

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee CHOI ,  Joohun HAN ,  Vladimir MATIAS

IPC: H01L29/16 ,  H01L29/04 ,  H01L21/02

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

公开(公告)号：US20220416120A1

公开(公告)日：2022-12-29

申请号：US17731829

申请日：2022-04-28

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN ,  Junhee CHOI ,  Nakhyun KIM ,  Junghun PARK ,  Eunsung LEE ,  Joohun HAN

IPC: H01L33/12 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44

Abstract: A light emitting device may be a bar-type light emitting device and include a n-GaN semiconductor layer, a p-GaN semiconductor layer spaced apart from the n-GaN semiconductor layer, an active layer arranged between the n-GaN semiconductor layer and the p-GaN semiconductor layer, and a strain relaxing layer including indium clusters and voids.

公开(公告)号：US20220271086A1

公开(公告)日：2022-08-25

申请号：US17744156

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee CHOI

IPC: H01L27/15 ,  H01L27/12 ,  H01L49/02 ,  H01L33/36 ,  H01L33/62

Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

公开(公告)号：US20220131030A1

公开(公告)日：2022-04-28

申请号：US17569217

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee CHOI ,  Deukseok CHUNG ,  Junsik HWANG

IPC: H01L33/00 ,  G09G3/32 ,  H01L33/50 ,  H01L33/62

Abstract: Provided are a method of manufacturing a display apparatus and the display apparatus. The method includes forming an emissive layer and a driving layer on a first area of a substrate, forming an exposure line electrically connected to the driving layer, on a second area of the substrate, and forming a color conversion layer on the driving layer by emitting light from the emissive layer using the exposure line.

公开(公告)号：US20210296296A1

公开(公告)日：2021-09-23

申请号：US17338748

申请日：2021-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Junhee CHOI ,  Euijoon YOON

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/50 ,  H01L33/48

Abstract: Provided are a micro light source array for a display device, a display device including the micro light source array, and a method of manufacturing the display device. The micro light source array includes: a plurality of silicon sub-mounts provided on a substrate, each silicon sub-mount from among the plurality of silicon sub-mounts corresponding to a respective sub-pixel from among a plurality of sub-pixels of a display device, the plurality of silicon sub-mounts being separated from each other by a plurality of trenches; a plurality of light emitting device chips coupled to the plurality of silicon sub-mounts; and a plurality of driving circuits provided at the plurality of silicon sub-mounts.

公开(公告)号：US20210159314A1

公开(公告)日：2021-05-27

申请号：US17100340

申请日：2020-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee CHOI ,  Joohun HAN ,  Vladimir MATIAS

IPC: H01L29/16 ,  H01L29/04 ,  H01L21/02

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

公开(公告)号：US20190140016A1

公开(公告)日：2019-05-09

申请号：US16183953

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junhee CHOI ,  Junghun PARK ,  Joohun HAN

IPC: H01L27/15 ,  H01L27/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/50 ,  H01L33/42

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/124 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58

Abstract: A display device is provided. The display device includes a substrate, an emission layer configured to emit light, the emission layer including a first semiconductor layer provided on the substrate, an active layer provided on the first semiconductor layer, and a second semiconductor layer provided on the active layer, and a plurality of color converting layers provided on the emission layer and configured to emit light of certain colors from light emitted from the emission layer.

公开(公告)号：US20160172535A1

公开(公告)日：2016-06-16

申请号：US14909297

申请日：2014-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Sangwon KIM ,  Hoyoung AHN ,  Eunhong LEE

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/38 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

Abstract: Disclosed are GaN based light emitting devices and methods of manufacturing the same using post-mechanical treatment. The GaN based light emitting device includes first and second electrodes, and a flexible substrate which are sequentially stacked, an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure, and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer.

Abstract translation: 公开了GaN基发光器件及其制造方法，其使用机械后处理。 GaN基发光器件包括第一和第二电极以及依次层叠的柔性衬底，n型GaN层，激活层和插入在第一和第二电极之间的p型GaN层，并形成芯 壳结构，以及插入在柔性基板和第一电极之间的掩埋层，其中第一电极和芯 - 壳结构被埋在掩埋层中。