公开(公告)号：US20160172535A1

公开(公告)日：2016-06-16

申请号：US14909297

申请日：2014-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Sangwon KIM ,  Hoyoung AHN ,  Eunhong LEE

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/38 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

Abstract: Disclosed are GaN based light emitting devices and methods of manufacturing the same using post-mechanical treatment. The GaN based light emitting device includes first and second electrodes, and a flexible substrate which are sequentially stacked, an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure, and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer.

Abstract translation: 公开了GaN基发光器件及其制造方法，其使用机械后处理。 GaN基发光器件包括第一和第二电极以及依次层叠的柔性衬底，n型GaN层，激活层和插入在第一和第二电极之间的p型GaN层，并形成芯 壳结构，以及插入在柔性基板和第一电极之间的掩埋层，其中第一电极和芯 - 壳结构被埋在掩埋层中。