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    Transistors, electronic devices including a transistor and methods of manufacturing the same
    52.
    发明授权
    Transistors, electronic devices including a transistor and methods of manufacturing the same 有权
    晶体管，包括晶体管的电子器件及其制造方法

    公开(公告)号：US08410479B2

    公开(公告)日：2013-04-02

    申请号：US12805110

    申请日：2010-07-13

    Applicant: Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    Inventor： Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/78696

    Abstract: Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions.

    Abstract translation: 提供晶体管，包括晶体管的电子器件及其制造方法，晶体管包括具有在一个方向上变化的组成的氧化物半导体层（作为沟道层）。 沟道层可以是包括作为金属元素的第一元素，第二元素和Zn的氧化物层。 第一元件，第二元件和Zn中的至少一个的量可以在沟道层的沉积方向上改变。 第一元素可以是铪（Hf），钇（Y），钽（Ta），锆（Zr），镓（Ga），铝（Al）或其组合中的任一种。 第二元素可以是铟（In）。 沟道层可以具有包括具有不同组成的至少两层的多层结构。

    X-Ray Detectors Including Diffusion Barrier Films
    54.
    发明申请
    X-Ray Detectors Including Diffusion Barrier Films 有权
    包括扩散阻挡膜的X射线探测器

    公开(公告)号：US20120211663A1

    公开(公告)日：2012-08-23

    申请号：US13247512

    申请日：2011-09-28

    Applicant: Sun-il Kim ,  Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim

    Inventor： Sun-il Kim ,  Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim

    IPC: G01T1/24 ,  G01T1/16

    CPC classification number: H01L27/14659 ,  H01L27/14632 ,  H01L27/14676

    Abstract: An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

    Abstract translation: X射线检测器包括光电导体，在感光体的第一表面上的第一扩散阻挡膜，第一扩散阻挡膜上的至少一个像素电极，用于处理从至少一个像素输出的电信号的信号发送单元 电极和与光电导体的第一表面相对的光电导体的第二表面上的公共电极。

    Thin film transistors having multi-layer channel
    55.
    发明授权
    Thin film transistors having multi-layer channel 有权
    具有多层通道的薄膜晶体管

    公开(公告)号：US08143678B2

    公开(公告)日：2012-03-27

    申请号：US11987499

    申请日：2007-11-30

    Applicant: Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    Inventor： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC classification number: H01L29/7869 ,  H01L29/78696

    Abstract: A transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer. The channel layer may have a double-layer structure, including upper and lower layers. The upper layer may have a carrier concentration lower than the lower layer. A method of manufacturing a transistor may include: forming a channel layer on a substrate; forming source and drain electrodes on the substrate; forming a gate insulating layer on the substrate; and forming a gate electrode on the gate insulating layer above the channel layer. A method of manufacturing a transistor may include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a channel layer on the gate insulating layer; and forming source and drain electrodes on the gate insulating layer.

    Abstract translation: 晶体管可以包括：栅极绝缘层; 形成在所述栅极绝缘层上的栅电极; 形成在所述栅极绝缘层上的沟道层; 以及与沟道层接触的源极和漏极。 沟道层可以具有双层结构，包括上层和下层。 上层可以具有低于下层的载流子浓度。 制造晶体管的方法可以包括：在衬底上形成沟道层; 在基板上形成源极和漏极; 在所述基板上形成栅极绝缘层; 以及在沟道层上方的栅极绝缘层上形成栅电极。 制造晶体管的方法可以包括：在衬底上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成沟道层; 以及在栅极绝缘层上形成源极和漏极。

    Inverter and logic device comprising the same
    56.
    发明授权
    Inverter and logic device comprising the same 有权
    逆变器和包括其的逻辑器件

    公开(公告)号：US08089301B2

    公开(公告)日：2012-01-03

    申请号：US12805402

    申请日：2010-07-29

    Applicant: Sun-il Kim ,  Chang-jung Kim ,  Sang-wook Kim

    Inventor： Sun-il Kim ,  Chang-jung Kim ,  Sang-wook Kim

    IPC: H01L25/00 ,  H03K19/00

    CPC classification number: H03K19/09443 ,  H03K19/09407

    Abstract: The inverter includes a driving transistor and a loading transistor having channel regions with different thicknesses. The channel region of the driving transistor may be thinner than the channel region of the load transistor. A channel layer of the driving transistor may have a recessed region between a source and a drain which contact both ends of the channel layer. The driving transistor may be an enhancement mode transistor and the load transistor may be a depletion mode transistor.

    Abstract translation: 逆变器包括驱动晶体管和具有不同厚度的沟道区的负载晶体管。 驱动晶体管的沟道区可以比负载晶体管的沟道区更薄。 驱动晶体管的沟道层可以在与沟道层的两端接触的源极和漏极之间具有凹陷区域。 驱动晶体管可以是增强型晶体管，负载晶体管可以是耗尽型晶体管。

    X-ray pixels including double photoconductors and x-ray detectors including the x-ray pixels
    57.
    发明申请
    X-ray pixels including double photoconductors and x-ray detectors including the x-ray pixels 有权
    包括双光电导体和包括x射线像素的x射线检测器的X射线像素

    公开(公告)号：US20110241143A1

    公开(公告)日：2011-10-06

    申请号：US12923553

    申请日：2010-09-28

    Applicant: Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    Inventor： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    IPC: H01L31/02 ,  G01T1/24

    CPC classification number: G01T1/242 ,  H01L31/085

    Abstract: Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

    Abstract translation: 示例性实施例涉及包括双光电导体的X射线检测器。 根据示例性实施例，X射线检测器包括在其上入射X射线的第一感光体和通过第一光电导体透射X射线的第二感光体。 第一光电导体和第二光电导体包括串联结构。 第一光电导体由硅形成并在低能带中吸收X射线，第二光电导体由吸收X射线的能量带的材料形成，该能带高于由硅吸收的X射线的低能带 。

    Optical touch panels and methods of driving the same
    58.
    发明申请
    Optical touch panels and methods of driving the same 有权
    光触摸面板及其驱动方法

    公开(公告)号：US20110141060A1

    公开(公告)日：2011-06-16

    申请号：US12805722

    申请日：2010-08-17

    Applicant: Sun-il Kim ,  Chang-jung Kim ,  Sang-hun Jeon ,  I-hun Song ,  Jae-chul Park

    Inventor： Sun-il Kim ,  Chang-jung Kim ,  Sang-hun Jeon ,  I-hun Song ,  Jae-chul Park

    IPC: G06F3/042

    CPC classification number: G06F3/0412 ,  G06F3/0386

    Abstract: An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.

    Abstract translation: 光学触摸面板可以包括多个感光区域。 多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。 驱动光学触摸面板的方法可以包括在两个时间点之间感测多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时确定存在光学输入 提前定义的参考值。 光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

    Transistors, electronic devices including a transistor and methods of manufacturing the same
    59.
    发明申请
    Transistors, electronic devices including a transistor and methods of manufacturing the same 有权
    晶体管，包括晶体管的电子器件及其制造方法

    公开(公告)号：US20110114939A1

    公开(公告)日：2011-05-19

    申请号：US12805110

    申请日：2010-07-13

    Applicant: Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    Inventor： Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    IPC: H01L33/00 ,  H01L29/12 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/78696

    Abstract: Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions.

    Abstract translation: 提供晶体管，包括晶体管的电子器件及其制造方法，晶体管包括具有在一个方向上变化的组成的氧化物半导体层（作为沟道层）。 沟道层可以是包括作为金属元素的第一元素，第二元素和Zn的氧化物层。 第一元件，第二元件和Zn中的至少一个的量可以在沟道层的沉积方向上改变。 第一元素可以是铪（Hf），钇（Y），钽（Ta），锆（Zr），镓（Ga），铝（Al）或其组合中的任一种。 第二元素可以是铟（In）。 沟道层可以具有包括具有不同组成的至少两层的多层结构。

    Oxide semiconductors and thin film transistors comprising the same
    60.
    发明授权
    Oxide semiconductors and thin film transistors comprising the same 有权
    氧化物半导体和包括其的薄膜晶体管

    公开(公告)号：US07816680B2

    公开(公告)日：2010-10-19

    申请号：US12213399

    申请日：2008-06-19

    Applicant: Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    Inventor： Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC: H01L29/12

    CPC classification number: H01L29/78693

    Abstract: Provided are oxide semiconductors and thin film transistors of the same. An oxide semiconductor includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A thin film transistor includes a gate and a gate insulating layer arranged on the gate. A channel corresponding to the gate is formed on the gate insulating layer. The channel includes an oxide semiconductor. The semiconductor oxide includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A source and a drain contact respective sides of the channel.

    Abstract translation: 提供了这样的氧化物半导体和薄膜晶体管。 氧化物半导体包括Zn，In和Hf。 基于Zn，In和Hf的总量，Hf的量在约2-16at％的范围内。 薄膜晶体管包括设置在栅极上的栅极和栅极绝缘层。 在栅极绝缘层上形成与栅极对应的沟道。 通道包括氧化物半导体。 半导体氧化物包括Zn，In和Hf。 基于Zn，In和Hf的总量，Hf的量在约2-16at％的范围内。 源极和漏极接触通道的相应侧面。

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