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公开(公告)号：US10707286B2
公开(公告)日：2020-07-07
申请号：US16417031
申请日：2019-05-20
Inventor： Qinghe Wang , Dongfang Wang , Tongshang Su , Rui Peng , Leilei Cheng , Yang Zhang , Jun Wang , Guangyao Li , Liangchen Yan , Guangcai Yuan
Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and being in contact with the active layer.
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52.发明申请公开(公告)号：US20200035721A1
公开(公告)日：2020-01-30
申请号：US16337544
申请日：2018-05-29
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC: H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
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53.发明授权公开(公告)号：US10541039B2
公开(公告)日：2020-01-21
申请号：US15768487
申请日：2017-09-26
Inventor： Yang Zhang , Jinliang Liu , Mo Chen , Jian Zhao , Jilei Gao , Songmei Sun
Abstract: A shift register circuit includes a set circuit, a first reset circuit, a first control circuit, and an output circuit. The output circuit is configured to change an active potential at the first node further away from an inactive potential in response to a first clock signal transferred to a signal output terminal being active, and the first control circuit is further configured to, responsive to the first clock signal transferred to the signal output terminal being active, restrict a change in the active potential at the first node based on a second reference voltage from a second reference voltage, the second reference voltage having a magnitude between an active input pulse and the inactive potential.
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54.发明申请公开(公告)号：US20190131143A1
公开(公告)日：2019-05-02
申请号：US15983453
申请日：2018-05-18
Inventor： Tongshang Su , Dongfang Wang , Jun Liu , Leilei Cheng , Wei Li , Qinghe Wang , Yang Zhang , Guangcai Yuan
IPC: H01L21/385 , H01L29/786 , H01L29/66
Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.
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55.发明申请公开(公告)号：US20190057666A1
公开(公告)日：2019-02-21
申请号：US15770904
申请日：2017-09-29
Inventor： Yang Zhang , Chengying Cao , Peng Li , Peng Wu
Abstract: The present application provides a reset circuit for a shift register circuit, a shift register circuit, a gate driving circuit, a display apparatus, and a driving method. The reset circuit comprises a first adjustment control circuit having an input terminal configured to receive a ground line signal, and a control terminal configured to receive a first control signal; a second adjustment control circuit having an input terminal configured to receive an adjustment signal via an adjustment signal input terminal, a control terminal configured to receive a second control signal, and an output terminal configured to be coupled to an output terminal of the first adjustment control circuit; and a storage circuit having a first terminal connected to the output terminals of the second adjustment control circuit and the first adjustment control circuit, and a second terminal connected between a reset signal input terminal and a transistor.
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Patent Agency Ranking
公开(公告)号：US10176741B2
公开(公告)日：2019-01-08
申请号：US15578679
申请日：2017-04-26
Inventor： Mo Chen , Jinliang Liu , Yang Zhang
IPC: G09G3/20
Abstract: This disclosure provides a gate driving unit, comprising an input sub-circuit, a pull-up sub-circuit, a transmission sub-circuit, an output sub-circuit, a reset sub-circuit, a pull-down sub-circuit and a storage sub-circuit, an input signal input terminal, a first clock signal input terminal, a second clock signal input terminal, a third clock signal input terminal, a fourth clock signal input terminal, a reset signal input terminal, a first level input terminal, a second level input terminal and a gate driving signal output terminal. This disclosure further provides a gate driving circuit and a driving method thereof, as well as a display device.
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57.发明申请公开(公告)号：US20180247592A1
公开(公告)日：2018-08-30
申请号：US15570883
申请日：2017-05-25
Inventor： Yang Zhang , Jinliang Liu
IPC: G09G3/3258
Abstract: A pixel driving circuit and a driving method thereof, an array substrate, and a display device. The pixel driving circuit includes a drift suppression unit, a data writing unit, a compensating unit, and a working unit; the drift suppression unit receives a reference control signal and a reference signal; the drift suppression unit is configured to output the reference signal to the compensating unit under control of the reference control signal during a drift suppression period and a resetting period; during the drift suppression period, an electrical potential of the reference signal is smaller than zero.
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公开(公告)号：US12245466B2
公开(公告)日：2025-03-04
申请号：US17417334
申请日：2020-11-05
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Yang Zhang , Guangyao Li , Wei Song , Xuanang Wang , Qinghe Wang , Liusong Ni , Jun Liu , Liangchen Yan , Ming Wang , Jingang Fang
IPC: H10K59/122 , H10K50/842 , H10K59/12 , H10K59/121 , H10K71/00
Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.
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公开(公告)号：US20240265889A1
公开(公告)日：2024-08-08
申请号：US18022452
申请日：2022-04-28
Inventor： Yang Zhang
IPC: G09G3/36
CPC classification number: G09G3/3677 , G09G2310/0286 , G09G2310/08 , G09G2330/02
Abstract: The present application provides a driving circuit and a driving method for the same and a display device, relating to the field of display technology. The driving circuit includes an input module, an output module, a pull-up module, an adjustment module, a pull-down module, and a reset module. When the pull-up module pulls up the voltage of a first node and then the pull-up module performs a bootstrapping function, the voltage of the first node continuously increases, and the adjustment module enables a scanning signal input terminal to discharge to pull down the voltage of the first node.
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60.发明公开公开(公告)号：US20240184866A1
公开(公告)日：2024-06-06
申请号：US17796781
申请日：2021-09-23
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yang Zhang , Xiaoqin Guo , Han Li , Mingyuan Ma
CPC classification number: G06F21/32 , G06V40/172
Abstract: The present disclosure provides a database managing method, a human-face-authentication method, a device and a storage medium, which relates to the technical field of computers. The method is applied to a human-face-recognition platform, the human-face-recognition platform is connected to a central server of a head office, the central server is, via a branch-office server of a branch office of the head office, connected to outlet servers of outlets of the branch office, and the method includes: acquiring user data of an target user, selecting a target outlet matching with the user data from the outlets; and controlling the central server to dispatch a user feature of the target user to a target-outlet server of the target outlet via the branch-office server, so that the target-outlet server performs human-face recognition to the target user according to the user feature.
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