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公开(公告)号：US20220190113A1
公开(公告)日：2022-06-16
申请号：US17523071
申请日：2021-11-10
Inventor： HIROFUMI KIDA
Abstract: A compound semiconductor layer in a semiconductor device includes a drift region of a first conductivity type, a JFET region of the first conductivity type disposed above the drift region, a body region of a second conductivity type disposed above the drift region and adjacent to the JFET region, and a JFET embedded region of the second conductivity type or i-type disposed in the JFET region. The JFET region has a bottom surface portion adjacent to the drift region, a side surface portion adjacent to the body region, and an inside portion adjacent to the JFET embedded region, and further has a high concentration portion at the bottom surface portion and the side surface portion. The high concentration portion has an impurity concentration higher than an impurity concentration of the inside portion.
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公开(公告)号：US20220130675A1
公开(公告)日：2022-04-28
申请号：US17463243
申请日：2021-08-31
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , DISCO Corporation
Inventor： Masatake NAGAYA , Teruaki KUMAZAWA , Yuji NAGUMO , Kazuya HIRATA , Asahi NOMOTO
IPC: H01L21/268 , H01L21/78 , H01L21/02
Abstract: A method of manufacturing a chip formation wafer includes: forming an epitaxial film on a first main surface of a silicon carbide wafer to provide a processed wafer having one side adjacent to the epitaxial film and the other side; irradiating a laser beam into the processed wafer from the other side of the processed wafer so as to form an altered layer along a surface direction of the processed wafer; and separating the processed wafer with the altered layer as a boundary into a chip formation wafer having the one side of the processed wafer and a recycle wafer having the other side of the processed wafer. The processed wafer has a beveling portion at an outer edge portion of the processed wafer, and an area of the other side is larger than an area of the one side in the beveling portion.
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公开(公告)号：US20220107408A1
公开(公告)日：2022-04-07
申请号：US17463072
申请日：2021-08-31
Inventor： Masato KOHTANI
IPC: G01S13/931 , G01S7/03
Abstract: A radar device for a vehicle includes: two or more receiving channels, each of which includes a mixer. At least one or more of the receiving channels includes: a phased array antenna divided into at least two or more branches to provide sub-array antenna elements; and a first phase shifter and a variable gain amplifier as a high frequency unit disposed between each of the sub-array antenna elements and the mixer. A numerical number of the sub-array antenna elements is equal to or more than a numerical number of the high-frequency units.
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公开(公告)号：US20250149385A1
公开(公告)日：2025-05-08
申请号：US19016086
申请日：2025-01-10
Inventor： Hiroki MIYAKE , Tatsuji NAGAOKA
IPC: H01L21/78 , H01L21/425 , H01L21/46 , H01L21/461 , H01L21/479 , H10D62/40
Abstract: A method for manufacturing a semiconductor device includes: preparing a substrate made of a compound semiconductor containing a first element and a second element that is bonded to the first element and has an electronegativity smaller than that of the first element by 1.5 or more; causing an electric current to flow in the substrate; and dividing the substrate at a position including a current region where the electric current is caused to flow and along a cleavage plane of the substrate. A method for manufacturing a semiconductor device includes: stacking a first substrate and a second substrate each made of the compound semiconductor; and bonding the first substrate and the second substrate by causing an electric current to flow between the first substrate and the second substrate.
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公开(公告)号：US12294832B2
公开(公告)日：2025-05-06
申请号：US17843220
申请日：2022-06-17
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
Inventor： Yuki Ohara , Tomoya Joke , Tetsuya Enomoto , Hideo Yamada , Shuji Katakami , Takahide Usui , Hiroyuki Kuchiji , Naoki Masumoto
Abstract: A microelectromechanical systems device includes a vibrator and a reinforcing film. The vibrator includes a piezoelectric element configured to convert pressure to an electrical signal. The reinforcing film is configured to reinforce strength of the vibrator. The vibrator further has a groove at which a portion of the reinforcing film is disposed.
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Patent Agency Ranking
公开(公告)号：US12287203B2
公开(公告)日：2025-04-29
申请号：US18169438
申请日：2023-02-15
Inventor： Shota Harada , Keitaro Ito , Hideaki Nishikawa , Yuuki Inagaki , Katsuaki Goto , Takahiko Yoshida , Yusuke Kawai
IPC: G01C19/5712
Abstract: In a mounting structure, a micro vibrator has: a curved surface portion having a hemispherical curved surface; a connecting portion extending from the curved surface portion toward a center of a hemispherical shape of the curved surface portion; and a surface electrode covering at least a part of the connecting portion and at least a part of the curved surface portion. A mounting substrate has two or more wirings and a part of the micro vibrator is connected to the mounting substrate. The wirings each have an electrode connection portion connected to a portion of the surface electrode covering the connecting portion at an end. The two or more wirings include a voltage application wiring and a voltage detection wiring. The voltage application wiring is spaced away from the voltage detection wiring on the mounting substrate.
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公开(公告)号：US12283620B2
公开(公告)日：2025-04-22
申请号：US18054568
申请日：2022-11-11
Inventor： Yosuke Maegawa , Yohei Iwahashi
IPC: H01L21/027 , H01L21/04 , H01L29/66 , H01L29/78
Abstract: A method for manufacturing a semiconductor device includes: preparing a semiconductor substrate; arranging a mask on one surface of the semiconductor substrate; forming opening portions in the mask by patterning so as to expose planned formation regions of the semiconductor substrate where trenches are to be formed; forming the trenches, which extend in a longitudinal direction along a planar direction of the semiconductor substrate, in the semiconductor substrate adjacent to the one surface, by performing a first etching using the mask; forming a rounded portion at an opening end portion of each of the trenches by performing a second etching in a state where the mask is arranged and under a condition that a selectivity of the mask is higher than that of the semiconductor substrate; and arranging a gate insulating film and a gate electrode in each of the trenches, thereby to form trench gate structures.
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公开(公告)号：US12280719B2
公开(公告)日：2025-04-22
申请号：US17962573
申请日：2022-10-10
Inventor： Kazuyuki Ishihara , Hiroshi Ando
Abstract: A blind spot display device displays an image of blind spot blocked by an obstacle, and includes an incidence surface, a light guide member, a first reflecting surface closed to a display region, a second reflecting surface close to the blind spot, and multiple prism portions protruding toward the display region. An external environment light beam enters the incidence surface, reflects alternately on the first and second reflecting surface while passing through the light guide member, and emits toward the display region through the prism portions. Apexes of the prism portions are arranged in a three dimensional manner not along a plane.
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公开(公告)号：US12276719B2
公开(公告)日：2025-04-15
申请号：US17693772
申请日：2022-03-14
Inventor： Sungwoo Cha
Abstract: A radar device includes a transmitter module configured to generate transmission waves including: generating a first chirp chain at a first chirp rate for a transmission wave to be output including: generating a first transmission signal including at least one modulated signal to be output at a first angle; and generating a second transmission signal to be output at a second angle different from the first angle; and generating a second chirp chain at a second chirp rate for the transmission wave to be output including: generating a third transmission signal including at least one modulated signal to be output at the first angle; and generating a fourth transmission signal including at least one modulated signal to be output at the second angle, where the first chirp rate is different than the second chirp rate.
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公开(公告)号：US12269733B2
公开(公告)日：2025-04-08
申请号：US17703418
申请日：2022-03-24
Inventor： Keitaro Ito , Shota Harada , Katsuaki Goto , Yuuki Inagaki , Teruhisa Akashi , Hirofumi Funabashi , Takahiko Yoshida , Yusuke Kawai
Abstract: A micro vibration body includes a curved surface portion, which has an annular curved surface, and a recessed portion, which is recessed from the curved surface portion. A mounting substrate includes an inner frame portion and electrode portions, which surround an inner frame portion. A joining member is provided in an inner region of the mounting substrate surrounded by the inner frame portion. The recessed portion of the micro vibration body has a bottom surface defining a mounted surface located in the inner region and joined to the mounting substrate via the joining member. The curved surface portion has a rim that includes an end portion of the curved surface portion on an opposite side to the recessed portion. The rim has a rim lower surface located on a same plane as the mounted surface or a tip end portion of the mounted surface.
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