公开(公告)号：US12259786B2

公开(公告)日：2025-03-25

申请号：US17232144

申请日：2021-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yang Seok Ki ,  Sungwook Ryu ,  Alain Tran

IPC: G06F11/00 ,  G06F3/06 ,  G06F11/10 ,  G06F11/14 ,  G06F11/16

Abstract: A method of operating a storage device may include determining a fault condition of the storage device, selecting a fault resilient mode based on the fault condition of the storage device, and operating the storage device in the selected fault resilient mode. The selected fault resilient mode may include one of a power cycle mode, a reformat mode, a reduced capacity read-only mode, a reduced capacity mode, a reduced performance mode, a read-only mode, a partial read-only mode, a temporary read-only mode, a temporary partial read-only mode, or a vulnerable mode. The storage device may be configured to perform a namespace capacity management command received from the host. The namespace capacity management command may include a resize subcommand and/or a zero-size namespace subcommand. The storage device may report the selected fault resilient mode to a host.

公开(公告)号：US12259785B2

公开(公告)日：2025-03-25

申请号：US17227262

申请日：2021-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yang Seok Ki ,  Sungwook Ryu

IPC: G06F11/10 ,  G06F3/06 ,  G06F11/16 ,  G06F11/30

Abstract: A method may include operating a first storage device and a second storage device as a redundant array configured to use parity information to recover information from a faulty storage device, operating the first storage device in a fault resilient mode with at least partial read capability based on a fault condition of the first storage device, and rebuilding information from the first storage device in a parity space of the second storage device. Rebuilding the information from the first storage device in the parity space of the second storage device may include copying the information from the first storage device to the parity space of the second storage device. The method may further include copying the rebuilt information from the parity space of the second storage device to a replacement storage device.

公开(公告)号：US12259457B2

公开(公告)日：2025-03-25

申请号：US17957661

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsu Choi ,  Sunkey Lee

IPC: G01S13/08 ,  H04L25/02 ,  H04W84/12

Abstract: An electronic device is provided. The electronic device includes a first communication circuit, a second communication circuit, and at least one processor. The first communication circuit is configured to receive, in a first band, a first reflective signal reflected by an object, and obtain, based on the received first reflective signal, a first channel impulse response corresponding to the first reflective signal. The second communication circuit is configured to receive, in a second band, a second reflective signal reflected by the object, obtain, based on the received second reflective signal, a second channel impulse response corresponding to the second reflective signal, and obtain a third channel impulse response based on a first calculation using the second channel impulse response, a first central frequency of the first band and a second central frequency of the second band.

公开(公告)号：US12257715B2

公开(公告)日：2025-03-25

申请号：US17974941

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Heo ,  Muwoong Lee ,  Jongmyeong Ko ,  Sangkyung Lee ,  Jiho Chu

IPC: B25J9/16

Abstract: A robot is provided. The robot includes a sensor, a driver, a communication interface, and a processor configured to acquire first context data through the sensor, receive second context data acquired by at least one other robot through the communication interface, identify at least one context data of the first context data and the second context data based on a collaboration scenario of the robot and the other robot, input the identified at least one context data to a predetermined task allocation algorithm related to the collaboration scenario to acquire task information corresponding to the robot, and control the driver based on the acquired task information.

公开(公告)号：US12256851B2

公开(公告)日：2025-03-25

申请号：US17940821

申请日：2022-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiwon Park ,  Seungjoon Lee ,  Yeeun Choi ,  Hoon Han

IPC: A47F10/06 ,  A47B31/00 ,  G01C21/20 ,  G06Q10/083

Abstract: Provided is an electronic device configured to generate a route including a point of departure and a first destination determined based on order information, while the electronic device is moved along the route using a driver, in response to not receiving an order from the first destination on which seating information indicating at least one seated customer is identified, perform an operation of outputting information indicating a serving tray accommodating a basic item based on the electronic device reaching the first destination, and based on a drive along the route being completed, in response to not delivering, to the first destination, at least one item indicated in an order received from the first destination, exclude the first destination from the route.

公开(公告)号：US20250098355A1

公开(公告)日：2025-03-20

申请号：US18444062

申请日：2024-02-16

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Weizhong ZHOU

IPC: H01L27/146

Abstract: A chip package structure and a method of manufacturing the same are provided. The chip package structure includes a substrate; a chip spaced from the substrate and having a first surface, a second surface and a side surface, the first surface of the chip including a photosensitive area and a non-photosensitive area surrounding the photosensitive area; a molding layer having a first surface and a second surface, the molding layer provided on the non-photosensitive area of the chip and the side surface of the chip.

公开(公告)号：US20250098324A1

公开(公告)日：2025-03-20

申请号：US18586112

申请日：2024-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan YUN ,  Myunghoon Jung ,  Kang-ill Seo

IPC: H01L27/06 ,  H01L21/8238 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device which includes: 1st source/drain regions connected through a 1st channel structure which is controlled by a 1st gate structure; and a 2nd source/drain regions, respectively above the 1st source/drain regions, connected through a 2nd channel structure which is controlled by a 2nd gate structure, wherein the 1st channel structure and the 2nd channel structure comprise different materials.

公开(公告)号：US20250098278A1

公开(公告)日：2025-03-20

申请号：US18815956

申请日：2024-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungho Moon ,  Donghoon Hwang ,  Hyojin Kim ,  Kyunghee Cho

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a substrate, lower channel layers spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate and extending in the first direction, upper channel layers on the lower channel layers, respectively, and spaced apart from each other in the vertical direction, a middle dielectric isolation structure between an uppermost lower channel layer among the lower channel layers and a lowermost upper channel layer among the upper channel layers, a lower gate structure on the lower channel layers; an upper gate structure on the upper channel layers on the lower gate structure and extending in a second direction perpendicular to the first direction. a gate isolation insulating layer between the lower gate structure and the upper gate structure, in contact with a side surface of the middle dielectric isolation structure, and extending around the lower gate structure.

公开(公告)号：US20250098201A1

公开(公告)日：2025-03-20

申请号：US18961728

申请日：2024-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhyuk PARK ,  Sunkyu HWANG ,  Jongseob KIM ,  Joonyong KIM ,  Woochul JEON

IPC: H01L29/778 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: The present disclosure provides a high electron mobility transistor including a channel layer; a barrier layer on the channel layer and configured to induce formation of a 2-dimensional electron gas (2DEG) to the channel layer; a p-type semiconductor layer on the barrier layer; a first passivation layer on the barrier layer and including a quaternary material of Al, Ga, O, and N; a gate electrode on the p-type semiconductor layer; and a source electrode and a drain electrode provided on both sides of the barrier layer and separated from the gate electrode.

公开(公告)号：US20250098176A1

公开(公告)日：2025-03-20

申请号：US18608130

申请日：2024-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KILHO LEE

IPC: H10B61/00

Abstract: A magnetic memory device may include conductive lines provided in cell region and peripheral region, a first insulating layer provided in the cell region and the peripheral region, and surrounding the conductive lines, a second insulating layer provided on the first insulating layer in the cell region and the peripheral region, and on top surfaces of the conductive lines, and data storage patterns provided on the second insulating layer in the cell region and electrically connected to corresponding conductive lines of the conductive lines. The second insulating layer in the peripheral region may include first portions on the top surfaces of the conductive lines, and second portions disposed between the first portions. Top surfaces of the first portions may be disposed at a level higher than top surfaces of the second portions.