公开(公告)号：US11735614B2

公开(公告)日：2023-08-22

申请号：US17251926

申请日：2019-07-30

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Ryoji Eki

IPC: H01L27/146 ,  G06V10/82 ,  H04N23/617 ,  H04N7/18 ,  G06N3/04 ,  G06F18/214 ,  H04N25/79 ,  H04N25/44 ,  H04N25/75 ,  H04N25/709 ,  G06V10/764 ,  G06V10/147 ,  G06V20/58 ,  G06V20/59

CPC classification number: H01L27/14634 ,  G06F18/214 ,  G06N3/04 ,  G06V10/147 ,  G06V10/764 ,  G06V10/82 ,  G06V20/58 ,  G06V20/584 ,  G06V20/597 ,  H01L27/14636 ,  H04N7/18 ,  H04N23/617 ,  H04N25/44 ,  H04N25/709 ,  H04N25/75 ,  H04N25/79

Abstract: Advanced processing is performed in a chip. A stacked light-receiving sensor according to an embodiment includes a first substrate (100, 200, 300) and a second substrate (120, 320) bonded to the first substrate. The first substrate includes a pixel array (101) in which a plurality of unit pixels are arranged in a two-dimensional matrix. The second substrate includes a converter (17) configured to convert an analog pixel signal output from the pixel array to digital image data and a processing unit (15) configured to perform a process based on a neural network calculation model for data based on the image data. At least a part of the converter is arranged on a first side in the second substrate. The processing unit is arranged on a second side opposite to the first side in the second substrate.

公开(公告)号：US11728362B2

公开(公告)日：2023-08-15

申请号：US17382571

申请日：2021-07-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Yen Li ,  Chia-Chan Chen ,  Meng-Chin Lee

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/79 ,  H04N25/531

CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H04N25/75 ,  H04N25/79 ,  H01L27/14607 ,  H01L27/14612 ,  H04N25/531

Abstract: A method is provided for light shielding a charge storage device of an image sensor pixel that includes a photosensitive device and the charge storage device and a dielectric layer covering the photosensitive device and the charge storage device. The method includes performing etching of the dielectric layer to define an undercut volume beneath the dielectric layer and an access opening through the dielectric layer to the undercut volume, and performing physical vapor deposition (PVD) of a light blocking material to both: fill the undercut volume with the light blocking material to form a light blocking layer covering the charge storage device, and fill the access opening with the light blocking material to form a light blocking plug. An image sensor pixel formed by such a process, and an image sensor comprising an array of image sensor pixels, are also disclosed.

公开(公告)号：US20230247326A1

公开(公告)日：2023-08-03

申请号：US18002792

申请日：2021-06-24

Applicant: Beijing RuisiZhixin Technology Co., Ltd. ,  Alpsentek GmbH

Inventor： Yingyun ZHA ,  Roger Mark BOSTOCK ,  Jian DENG ,  Yu ZOU

IPC: H04N25/771 ,  H04N25/772

CPC classification number: H04N25/771 ,  H04N25/772 ,  H04N25/79

Abstract: A delta image sensor comprising an arrangement of pixels and acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes a sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; a digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and a digital output circuit configured to generate an event output when the level has changed. The repeat rate of the analogue to digital conversion is chosen from one or more repeat rates corresponding to modulation of the light signal.

公开(公告)号：US20230247319A1

公开(公告)日：2023-08-03

申请号：US18186388

申请日：2023-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyong NA ,  Shinyeol Choi ,  Kyuik Cho

IPC: H04N25/633 ,  H04N17/00 ,  H04N25/74 ,  H04N25/76 ,  H04N25/79 ,  H04N25/771 ,  H04N25/772

CPC classification number: H04N25/633 ,  H04N17/002 ,  H04N25/74 ,  H04N25/76 ,  H04N25/79 ,  H04N25/771 ,  H04N25/772 ,  H04N25/75

Abstract: An image sensor includes a pixel array, a row driver, a detector, an analog-to-digital converter and a controller. The pixel array includes a pixel area including a pixel and a dummy area including a monitoring circuit. The dummy area is disposed on a same substrate as the pixel area. The dummy area is disposed adjacent to the pixel area. The row driver is configured to output a driving signal to the pixel and the monitoring circuit. The detector is configured to receive a monitoring signal from the monitoring circuit. The analog-to-digital converter is configured to receive an analog signal corresponding to an incident light from the pixel and to convert the analog signal to a digital signal. The controller is configured to control the row driver and the analog-to-digital converter.

公开(公告)号：US11716547B2

公开(公告)日：2023-08-01

申请号：US17530316

申请日：2021-11-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Zhe Gao ,  Ling Fu ,  Yu-Shen Yang ,  Tiejun Dai

IPC: H04N25/44 ,  G11C27/02 ,  H04N25/75 ,  H04N25/79

CPC classification number: H04N25/44 ,  G11C27/02 ,  H04N25/75 ,  H04N25/79

Abstract: A switch driver circuit includes a plurality of pullup transistors. The plurality of pullup transistors includes a first pullup transistor coupled between a voltage supply and a first output node. A plurality of pulldown transistors includes a first pulldown transistor coupled between the first output node and a ground node. A slope control circuit is coupled to the ground node. A plurality of global connection switches includes a first global connection switch coupled between the first output node and the slope control circuit.

公开(公告)号：US20230239591A1

公开(公告)日：2023-07-27

申请号：US18130046

申请日：2023-04-03

Applicant: NIKON CORPORATION

Inventor： Wataru FUNAMIZU ,  Yojiro TEZUKA ,  Masahiro JUEN

IPC: H04N25/65 ,  H04N25/75 ,  H04N25/79 ,  H01L27/146

CPC classification number: H04N25/65 ,  H04N25/75 ,  H04N25/79 ,  H01L27/14634

Abstract: An image sensor includes: a pixel that generates a pixel signal based upon incident light having entered therein; and a generation unit that includes a first input unit to which the pixel signal is input, a second input unit to which a first reference signal with a shifting voltage is input, and an output unit that outputs an output signal generated based upon the pixel signal and the first reference signal, wherein: the generation unit further includes a first capacitance disposed between the first input unit and the output unit, a second capacitance disposed between the second input unit and the output unit, and a third capacitance connected to either one of the first capacitance and the second capacitance.

公开(公告)号：US11711637B2

公开(公告)日：2023-07-25

申请号：US17868276

申请日：2022-07-19

Applicant: Nuvoton Technology Corporation Japan

Inventor： Yutaka Abe ,  Hiroshi Fujinaka

IPC: H04N25/772 ,  H04N25/79 ,  H04N25/778 ,  H04N25/53 ,  H04N25/65

CPC classification number: H04N25/772 ,  H04N25/778 ,  H04N25/79 ,  H04N25/53 ,  H04N25/65

Abstract: A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.

公开(公告)号：US11706546B2

公开(公告)日：2023-07-18

申请号：US17335794

申请日：2021-06-01

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Kevin Chan

IPC: H04N25/79 ,  G06V40/16 ,  G06V10/82

CPC classification number: H04N25/79 ,  G06V10/82 ,  G06V40/161 ,  G06V40/168

Abstract: An image sensor, electronic device and method thereof that performs on-sensor single object class detection using an on-sensor single object class detection deep neural network (DNN), such as a face detection DNN. The single object class detection DNN includes a pixel array layer configured to capture an image and transfer image data of the captured image, and a logic and single object class detection deep neural network (DNN) layer that receives the image data directly from the pixel array layer and outputs the image data with the single object class detection data to a communication bus of an electronic device.

公开(公告)号：US20230217130A1

公开(公告)日：2023-07-06

申请号：US17935731

申请日：2022-09-27

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Atsumi Niwa

IPC: H04N25/47 ,  H01L27/146 ,  H04N25/63 ,  H04N25/79

CPC classification number: H04N25/47 ,  H01L27/14634 ,  H04N25/63 ,  H04N25/79

Abstract: There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

公开(公告)号：US11689832B2

公开(公告)日：2023-06-27

申请号：US17687772

申请日：2022-03-07

Applicant: NIKON CORPORATION

Inventor： Shiro Tsunai ,  Hironobu Murata

IPC: H04N5/374 ,  H04N25/772 ,  H01L27/146 ,  H04N25/70 ,  H04N25/75 ,  H04N25/79 ,  H04N25/13 ,  H04N25/534 ,  H04N25/583 ,  H04N25/778

CPC classification number: H04N25/772 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14641 ,  H01L27/14645 ,  H04N25/134 ,  H04N25/534 ,  H04N25/583 ,  H04N25/70 ,  H04N25/75 ,  H04N25/778 ,  H04N25/79 ,  H01L27/14627

Abstract: An imaging element includes: an imaging unit in which a plurality of pixel groups including a plurality of pixels that output pixel signals according to incident light are formed, and on which incident light corresponding to mutually different pieces of image information is incident; a control unit that controls, for each of the pixel groups, a period of accumulating in the plurality of pixels included in the pixel group; and a readout unit that is provided to each of the pixel groups, and reads out the pixel signals from the plurality of pixels included in the pixel group.