公开(公告)号：US20050035908A1

公开(公告)日：2005-02-17

申请号：US10643324

申请日：2003-08-16

申请人： Wen Lin

发明人： Wen Lin

IPC分类号： H01Q1/22 ,  H01Q1/38 ,  H01Q9/40 ,  H01Q21/28

CPC分类号： H01Q1/2275 ,  H01Q1/38 ,  H01Q9/40 ,  H01Q21/28

摘要： A card device includes one or more antenna devices printed on a board member and each having a T-shaped structure formed by two segments, for sending or receiving wireless signals or for wireless transmission purposes, and for allowing the antenna device to be easily printed and applied onto the board member of the card device without additional securing or welding or assembling processes. Each of the antenna devices includes a conductor printed around the T-shaped antenna device to form a T-shaped hollow space in the antenna device.

摘要翻译： 卡装置包括一个或多个天线装置，其印刷在电路板部件上，每个具有由两个部分形成的T形结构，用于发送或接收无线信号或用于无线传输目的，并允许天线装置易于打印， 施加到卡装置的板构件上，而不需要额外的固定或焊接或组装过程。 每个天线装置包括印在T形天线装置周围的导体，以在天线装置中形成T形中空空间。

公开(公告)号：US06410974B1

公开(公告)日：2002-06-25

申请号：US09800049

申请日：2001-03-05

申请人： Jerome Tsu-Rong Chu ,  John D. LaBarre ,  Wen Lin ,  Blair Miller

发明人： Jerome Tsu-Rong Chu ,  John D. LaBarre ,  Wen Lin ,  Blair Miller

IPC分类号： H01L2976

摘要： The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably includes forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：US4456499A

公开(公告)日：1984-06-26

申请号：US400570

申请日：1982-07-22

申请人： Wen Lin

发明人： Wen Lin

IPC分类号： C30B15/12 ,  C30B15/04

CPC分类号： C30B15/12

摘要： An apparatus useful for double crucible Czochralski crystal growth comprises an inner crucible fixed within an outer crucible wherein the inner crucible contains an extra volume or reservoir of semiconductor melt when flow of semiconductor melt from the outer crucible into the inner crucible through means interconnecting the crucibles ceases.

摘要翻译： 可用于双坩埚切克隆斯基晶体生长的装置包括固定在外坩埚内的内坩埚，其中，当半导体熔体从外坩埚通过互连坩埚停止的装置流入内坩埚时，内坩埚含有额外体积或半导体熔体储存器 。