公开(公告)号：US20230375911A1

公开(公告)日：2023-11-23

申请号：US18365757

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Hsun LIN ,  Pei-Cheng HSU ,  Ching-Fang YU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

公开(公告)号：US20230130162A1

公开(公告)日：2023-04-27

申请号：US17750145

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Hsin-Chang LEE

IPC: C23C16/455 ,  H01J37/32

Abstract: A plasma enhanced atomic layer deposition (PEALD) system includes a process chamber. A target substrate is supported in the process chamber. A grid is positioned in the process chamber above the target substrate. The grid includes a plurality of apertures extending from a first side of the grid to a second side of the grid. During a PEALD process, a plasma generator generates a plasma. The energy of the plasma is reduced by passing the plasma through the apertures in the grid prior to reacting the plasma with the target substrate.

公开(公告)号：US20220082928A1

公开(公告)日：2022-03-17

申请号：US17532939

申请日：2021-11-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/22

Abstract: An extreme ultra-violet mask includes a substrate, a multi-layered mirror layer, a capping layer, a first tantalum-containing oxide layer, a tantalum-containing nitride layer, and a second tantalum-containing oxide layer. The multi-layered mirror layer is over the substrate. The capping layer is over the multi-layered mirror layer. The first tantalum-containing oxide layer is over the capping layer. The tantalum-containing nitride layer is over the first tantalum-containing oxide layer. The second tantalum-containing oxide layer is over the tantalum-containing nitride layer.

公开(公告)号：US20210364906A1

公开(公告)日：2021-11-25

申请号：US17065712

申请日：2020-10-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/027 ,  H01L21/033

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

公开(公告)号：US20210200107A1

公开(公告)日：2021-07-01

申请号：US17085206

申请日：2020-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Yang LIN ,  Da-Wei YU ,  Li-Hsin WANG ,  Kuan-Wen LIN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F7/20 ,  G03F1/22 ,  G03F1/82

Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.

公开(公告)号：US20200004133A1

公开(公告)日：2020-01-02

申请号：US16441700

申请日：2019-06-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Chi-Ping WEN ,  Tzu Yi WANG ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/22

Abstract: A method of manufacturing an extreme ultraviolet (EUV) lithography mask includes forming an image pattern in an absorption layer of EUV mask blank. The EUV mask blank includes: a multilayer stack including alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate, a capping layer disposed over the multilayer stack, and an absorption layer disposed over the capping layer. A border region surrounds the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched. Concave sidewalls are formed in the border region or an inter-diffused portion is formed in the multilayer stack of the trench.

公开(公告)号：US20180173092A1

公开(公告)日：2018-06-21

申请号：US15381033

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Chih-Cheng LIN ,  Hsin-Chang LEE ,  Yao-Ching KU ,  Wei-Jen LO ,  Anthony YEN ,  Chin-Hsiang LIN ,  Mark CHIEN

IPC: G03F1/62 ,  G03F1/22

CPC classification number: G03F1/62 ,  G03F1/24

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

公开(公告)号：US20180149963A1

公开(公告)日：2018-05-31

申请号：US15475903

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Fu HSIEH ,  Chih-Chiang TU ,  Jong-Yuh CHANG ,  Hsin-Chang LEE

IPC: G03F1/42 ,  G03F1/24 ,  G03F1/54 ,  G03F1/48 ,  G03F1/78 ,  G03F1/80 ,  G03F1/82

CPC classification number: G03F1/42 ,  G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80 ,  G03F1/82 ,  G03F1/84

Abstract: The present disclosure describes a method to form alignment marks on or in the top layer of an extreme ultraviolet (EUV) mask blank without the use of photolithographic methods. For example, the method can include forming a metal structure on the top layer of the EUV mask blank by dispensing a hexacarbonylchromium vapor on the top layer of the EUV mask and exposing the hexacarbonylchromium vapor to an electron-beam. The hexacarbonylchromium vapor is decomposed to form the metal structure at an area which is proximate to where the hexacarbonylchromium vapors interact with the electron-beam. In another example, the method can include forming a patterned structure in the top layer of an EUV mask blank with the use of an etcher aperture and an etching process.

公开(公告)号：US20150371377A1

公开(公告)日：2015-12-24

申请号：US14309980

申请日：2014-06-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Chang HSUEH ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G06T7/00 ,  G02B21/00 ,  G02B21/36 ,  H01L21/66

CPC classification number: G06T7/0006 ,  G02B21/0016 ,  G02B21/367 ,  G06T7/0004 ,  G06T7/13 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01L22/12

Abstract: A method and a system for inspection of a patterned structure are provided. In various embodiments, the method for inspection of a patterned structure includes transferring the patterned structure into a microscope. The method further includes acquiring a top-view image of the patterned structure by the microscope. The method further includes transferring the patterned structure out of the microscope and exporting the top-view image to an image analysis processor. The method further includes measuring a difference between a contour of the top-view image and a predetermined layout of the patterned structure by the image analysis processor.

Abstract translation: 提供了一种用于检查图案结构的方法和系统。 在各种实施例中，用于检查图案化结构的方法包括将图案化结构转移到显微镜中。 该方法还包括通过显微镜获取图案化结构的顶视图。 该方法还包括将图案化结构转移出显微镜并将顶视图输出到图像分析处理器。 该方法还包括通过图像分析处理器测量顶视图像的轮廓与图案化结构的预定布局之间的差异。

公开(公告)号：US20150331309A1

公开(公告)日：2015-11-19

申请号：US14278678

申请日：2014-05-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Chang HSUEH ,  Chia-Jen CHEN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/32

CPC classification number: G03F1/32 ,  G03F1/28

Abstract: A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.

Abstract translation: 提供了掩模版和制作掩模版的方法。 在各种实施例中，掩模版包括衬底，图案化的第一衰减层，图案化的第二衰减层和图案化的第三衰减层。 图案化的第一衰减层设置在基板上。 图案化的第二衰减层设置在图案化的第一衰减层上。 图案化的第三衰减层设置在图案化的第二衰减层上。 图案化第一衰减层的第一部分，图案化第二衰减层的第一部分和图案化的第三衰减层作为二值强度掩模部分堆叠在基板上。