公开(公告)号：US20230207285A1

公开(公告)日：2023-06-29

申请号：US18088870

申请日：2022-12-27

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32091 ,  H01J2237/2007

Abstract: There is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a dielectric member having a substrate supporting surface; a first filter element disposed in the dielectric member, the first filter element having a first terminal and a second terminal; and a first electrode disposed in the dielectric member, the first electrode being electrically connected to the first terminal. The plasma processing apparatus includes an RF generator coupled to the plasma processing chamber and configured to generate an RF signal; and a first DC generator electrically connected to the second terminal and configured to generate a DC signal.

公开(公告)号：US20230162946A1

公开(公告)日：2023-05-25

申请号：US18101468

申请日：2023-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Shin HIROTSU

IPC: H01J37/32 ,  H01J37/16 ,  H01J37/04

CPC classification number: H01J37/32027 ,  H01J37/16 ,  H01J37/32642 ,  H01J37/04 ,  H01J37/32082 ,  H01J37/241

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

公开(公告)号：US20230094655A1

公开(公告)日：2023-03-30

申请号：US17951579

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Gen TAMAMUSHI ,  Masahiro INOUE ,  Yuto KOSAKA ,  Shoichiro MATSUYAMA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

公开(公告)号：US20220375731A1

公开(公告)日：2022-11-24

申请号：US17746958

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shoichiro MATSUYAMA

IPC: H01J37/32

Abstract: A substrate support disclosed herein includes a base and an electrostatic chuck (ESC). The ESC is located on the base. The base and the electrostatic chuck provide a first region configured to support a substrate and a second region extending to surround the first region and configured to support an edge ring. The first region or the second region includes a variable capacitor portion configured to have variable electrostatic capacitance.

公开(公告)号：US20210327681A1

公开(公告)日：2021-10-21

申请号：US17359642

申请日：2021-06-28

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Taichi HIRANO ,  Toru HAYASAKA ,  Shinji KUBOTA ,  Koji MARUYAMA ,  Takashi DOKAN

IPC: H01J37/32 ,  H01L21/3065

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

公开(公告)号：US20210296092A1

公开(公告)日：2021-09-23

申请号：US17194393

申请日：2021-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A detecting method includes: supplying a bias power to a lower electrode, and supplying a source power to an upper electrode or the lower electrode; and detecting an output value of a sensor attached to a chamber. The detecting the output value of the sensor includes (a) specifying a first phase of a bias waveform for each cycle of the bias waveform, (b) specifying a second phase of a source waveform after a predetermined first time elapses from a timing when the first phase is specified, and (c) sampling the output value of the sensor after a predetermined second time elapses from a timing when the second phase is specified. The steps (a) to (c) are repeated for each cycle of the bias waveform.

公开(公告)号：US20210066040A1

公开(公告)日：2021-03-04

申请号：US17009846

申请日：2020-09-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji KUBOTA ,  Yuji AOTA ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

公开(公告)号：US20210043472A1

公开(公告)日：2021-02-11

申请号：US16978193

申请日：2019-07-17

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shinji KUBOTA ,  Koji MARUYAMA ,  Takashi DOKAN ,  Koichi NAGAMI

IPC: H01L21/67 ,  H01J37/32

Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

公开(公告)号：US20200219706A1

公开(公告)日：2020-07-09

申请号：US16725915

申请日：2019-12-23

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in which the potential of the substrate is relatively high. A power level of the radio frequency power is lowered in a second period in the cycle, in which the potential of the substrate is relatively low. In the first period and the second period, the sheath adjuster adjusts a position in a vertical direction of an upper end of a sheath above an edge ring.

公开(公告)号：US20200118794A1

公开(公告)日：2020-04-16

申请号：US16597193

申请日：2019-10-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Shin HIROTSU

IPC: H01J37/32 ,  H01J37/16 ,  H01J37/04

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.