公开(公告)号：US20210366957A1

公开(公告)日：2021-11-25

申请号：US17396693

申请日：2021-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146 ,  H01L31/036

Abstract: A method of forming a semiconductor device includes forming photodiodes extending from a front-side surface of a semiconductor layer into the semiconductor layer; forming transistors on the front-side surface of the semiconductor layer; forming an interconnect structure over the transistors, the interconnect structure comprising an inter-metal dielectric and metal lines in the inter-metal dielectric; etching first regions of a backside surface of the semiconductor layer to form trenches in the semiconductor layer and non-overlapping the photodiodes; after forming the trenches, etching second regions of the backside surface of the semiconductor layer to form pits in the semiconductor layer and overlapping the photodiodes; and depositing a dielectric material in the trenches and the pits.

公开(公告)号：US20210118939A1

公开(公告)日：2021-04-22

申请号：US17135590

申请日：2020-12-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kai-Chun HSU ,  Kuo-Cheng LEE ,  Shyh-Fann TING

IPC: H01L27/146 ,  H01L21/28

Abstract: A method includes depositing a gate dielectric layer over a substrate. A gate electrode layer, a protection oxide layer, and a hard mask are sequentially deposited over the gate dielectric layer. The gate electrode layer and the protection oxide layer are patterned by using the hard mask as an etching mask to form a gate structure over the gate dielectric layer. An etching process is performed to remove the hard mask and thin the protection oxide layer after forming the gate structure.

公开(公告)号：US20200321294A1

公开(公告)日：2020-10-08

申请号：US16907838

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L23/00 ,  H01L27/146

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

公开(公告)号：US20200091207A1

公开(公告)日：2020-03-19

申请号：US16687620

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

Abstract: A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.

公开(公告)号：US20200075661A1

公开(公告)日：2020-03-05

申请号：US16118335

申请日：2018-08-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.

公开(公告)号：US20190252436A1

公开(公告)日：2019-08-15

申请号：US16391009

申请日：2019-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14685

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.

公开(公告)号：US20190140006A1

公开(公告)日：2019-05-09

申请号：US15807980

申请日：2017-11-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A method for forming an image sensor device is provided. The method includes forming a first trench in a semiconductor substrate. The semiconductor substrate has a front surface and a back surface, and the first trench extends from the front surface into the semiconductor substrate. The method includes forming a first isolation structure in the first trench. The method includes forming a light-sensing region in the semiconductor substrate. The first isolation structure surrounds the light-sensing region. The method includes forming a second trench in the semiconductor substrate. The second trench extends from the back surface into the semiconductor substrate and exposes the first isolation structure. The method includes forming a second isolation structure in the second trench. The second isolation structure includes a light-blocking structure to absorb or reflect incident light.

公开(公告)号：US20180374884A1

公开(公告)日：2018-12-27

申请号：US15634148

申请日：2017-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the semiconductor substrate and aligned with the light sensing region. The filter element has a first portion and a second portion, and the first portion is between the second portion and the light sensing region. The light sensing device further includes a light shielding element over the semiconductor substrate and beside the first portion of the filter element. In addition, the light sensing device includes a dielectric element over the light shielding element and beside the second portion of the filter element. A top width of the light shielding element is greater than a bottom width of the dielectric element.

公开(公告)号：US20170098675A1

公开(公告)日：2017-04-06

申请号：US15380764

申请日：2016-12-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Shiu-Ko JANGJIAN ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02164 ,  H01L31/0232

Abstract: A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.

公开(公告)号：US20160163760A1

公开(公告)日：2016-06-09

申请号：US14562424

申请日：2014-12-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Kun-Huei LIN ,  Chun-Hao CHOU ,  Tzu-Hsuan HSU ,  Ching-Chun WANG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

Abstract translation: 半导体器件包括衬底，感光器件，至少一个红外辐射感测器件，透明绝缘层，红外辐射切割层，滤色器层和红外辐射滤色器层。 光感测装置和至少一个红外辐射感测装置设置在基板中并且彼此相邻。 透明绝缘层设置在覆盖光感测装置和至少一个红外辐射感测装置的基板上。 红外辐射切割层设置在覆盖光感测装置的透明绝缘层上，用于滤除红外辐射和/或近红外辐射。 滤色器层设置在红外辐射切割层上。 红外辐射滤色器层设置在覆盖至少一个红外辐射感测装置的透明绝缘层上。