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公开(公告)号:US20220238541A1
公开(公告)日:2022-07-28
申请号:US17487317
申请日:2021-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaebeom Byun , Jongsam Kim , Sehwan Park
IPC: H01L27/11526 , H01L27/11573 , H01L23/38
Abstract: A vertical non-volatile memory device capable of stably maintaining an operating temperature in a chip level, a semiconductor package including the memory device, and a heat dissipation method of the memory device. The vertical non-volatile memory device includes a substrate on which a cell array area and an extension area are defined, a vertical channel structure formed on the substrate, a thermoelectric device including at least two semiconductor pillars formed on the substrate, and a stacked structure on the substrate. The stacked structure includes a gate electrode layer and an interlayer insulation layer which are stacked alternately along sidewalls of the vertical channel structure and the at least two semiconductor pillars. The at least two semiconductor pillars include an n-type semiconductor pillar and a p-type semiconductor pillar which are electrically connected to each other through a conductive layer on the substrate.
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公开(公告)号:US11386974B2
公开(公告)日:2022-07-12
申请号:US17147851
申请日:2021-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sehwan Park , Jinyoung Kim , Ilhan Park , Kyoman Kang , Sangwan Nam
Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory blocks that includes a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to select one among the plurality of memory blocks, based on an address, a voltage generator configured to apply word line voltages corresponding to selected word lines and unselected word lines, among the plurality of word lines, page buffers connected to the plurality of bit lines and configured to read data from a memory cell connected to one among the selected word lines of the selected one among the plurality of memory blocks, and a control logic configured to control the row decoder, the voltage generator, and the page buffers.
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公开(公告)号:US20220214826A1
公开(公告)日:2022-07-07
申请号:US17376437
申请日:2021-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngdeok Seo , Jinyoung Kim , Sehwan Park , Dongmin Shin , Woohyun Kang , Shinho Oh
Abstract: A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.
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公开(公告)号:US11099888B2
公开(公告)日:2021-08-24
申请号:US16594637
申请日:2019-10-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjoo Park , Sehwan Park , Minjeong Kang , Jinhee Choi
IPC: G06F9/48 , G06F3/0483
Abstract: A method and an electronic device are provided in which, in response to a first user input, a stack of partially overlaid visual elements is displayed in response to the first user input. Each visual element corresponds to an application that is running in the electronic device and includes an index item representing the corresponding application. A second user input for selecting a visual element from the stack of partially overlaid visual elements is received through the touchscreen. An execution screen of an application corresponding to the selected visual element is displayed.
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公开(公告)号:US10534754B2
公开(公告)日:2020-01-14
申请号:US15710486
申请日:2017-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sehwan Park
IPC: G06F3/0482 , G06F3/0486 , G06F16/14 , G06F16/242 , G06F3/0488 , G06F3/0481 , G06F3/023
Abstract: A method and apparatus for a search function are provided in a touch-sensitive device that supports a search for contents in a list view by using a dedicated keypad displayed in the list view. In the method, the apparatus displays the dedicated keyboard for a content search in the list view, and performs the content search in the list view in response to an interaction inputted on the dedicated keyboard. The apparatus then displays at least one execution item associated with at least one found content, and executes the content associated with a selected one among the at least one execution item.
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公开(公告)号:US10347246B2
公开(公告)日:2019-07-09
申请号:US13739637
申请日:2013-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongyeol Lee , Sehwan Park
IPC: G10L15/26 , G10L15/22 , G06F3/16 , G06F3/0487 , G06F3/0482 , G10L15/00 , G06F9/451
Abstract: A method and an apparatus for executing a user function using voice recognition. The method includes displaying a user function execution screen; confirming a function to be executed according to voice input; displaying a voice command corresponding to the confirmed function on the user function execution screen; recognizing a voice input by a user, while a voice recognition execution request is continuously received; and executing the function associated with the input voice command, when the recognized voice input is at least one of the displayed voice command.
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公开(公告)号:US09773008B2
公开(公告)日:2017-09-26
申请号:US13653989
申请日:2012-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sehwan Park
IPC: G06F3/048 , G06F17/30 , G06F3/0488 , G06F3/0481 , G06F3/023
CPC classification number: G06F17/301 , G06F3/0237 , G06F3/0238 , G06F3/04817 , G06F3/04886 , G06F17/30398
Abstract: A method and apparatus for a search function are provided in a touch-sensitive device that supports a search for contents in a list view by using a dedicated keypad displayed in the list view. In the method, the apparatus displays the dedicated keyboard for a content search in the list view, and performs the content search in the list view in response to an interaction inputted on the dedicated keyboard. The apparatus then displays at least one execution item associated with at least one found content, and executes the content associated with a selected one among the at least one execution item.
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公开(公告)号:US20130174179A1
公开(公告)日:2013-07-04
申请号:US13729852
申请日:2012-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngjoo PARK , Sehwan Park , Minjeong Kang , Jinhee Choi
IPC: G06F9/48
CPC classification number: G06F9/4843 , G06F3/0483
Abstract: A multitasking method and apparatus of a user device is provided for intuitively and swiftly switching between background and foreground tasks running on the user device. The multitasking method includes receiving an interaction to request for task-switching in a state where an execution screen of a certain application is displayed, displaying a stack of tasks that are currently running, switching a task selected from the stack to a foreground task, and presenting an execution window of the foreground task.
Abstract translation: 提供了一种用户设备的多任务方法和装置,用于在用户设备上运行的后台和前台任务之间直观和快速地切换。 多任务方法包括在显示特定应用的执行屏幕的状态下接收请求任务切换的交互,显示当前正在运行的任务的堆叠,将从栈中选择的任务切换到前台任务;以及 呈现前台任务的执行窗口。
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公开(公告)号:US12045132B2
公开(公告)日:2024-07-23
申请号:US18156893
申请日:2023-01-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongmin Shin , Jinyoung Kim , Sehwan Park , Youngdeok Seo
CPC classification number: G06F11/1068 , H03M13/45
Abstract: A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device; an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device; predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.
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公开(公告)号:US11804280B2
公开(公告)日:2023-10-31
申请号:US17749607
申请日:2022-05-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sehwan Park , Jinyoung Kim , Ilhan Park , Kyoman Kang , Sangwan Nam
CPC classification number: G11C29/50004 , G11C7/1039 , G11C7/1045 , G11C7/1057 , G11C7/1084 , G11C8/18 , G11C16/28 , G11C29/44 , G11C2029/1202 , G11C2029/1204
Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory blocks that includes a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to select one among the plurality of memory blocks, based on an address, a voltage generator configured to apply word line voltages corresponding to selected word lines and unselected word lines, among the plurality of word lines, page buffers connected to the plurality of bit lines and configured to read data from a memory cell connected to one among the selected word lines of the selected one among the plurality of memory blocks, and a control logic configured to control the row decoder, the voltage generator, and the page buffers.
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