公开(公告)号：US09595401B1

公开(公告)日：2017-03-14

申请号：US15066780

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho Lee ,  Yongsung Kim ,  Changseung Lee

IPC: H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  H01G11/86 ,  H01G11/36 ,  C23C16/26 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01G11/86 ,  H01G11/26 ,  H01G11/36 ,  H01G11/46 ,  H01G11/70 ,  Y02E60/13

Abstract: Example embodiments relate to a method of fabricating a graphene nano-mesh by selectively growing an oxide layer on a defect site of a graphene layer and etching the oxide layer to form the graphene nano-mesh. The method includes forming a graphene layer on a catalyst layer, forming an oxide layer on a defect site of the graphene layer, forming the graphene nano-mesh including a plurality of openings by etching the oxide layer, and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate.

Abstract translation: 示例性实施例涉及通过选择性地生长石墨烯层的缺陷部位上的氧化物层并蚀刻氧化物层以形成石墨烯纳米网来制造石墨烯纳米网的方法。 该方法包括在催化剂层上形成石墨烯层，在石墨烯层的缺陷部位形成氧化层，通过蚀刻氧化层形成包括多个开口的石墨烯纳米网，并且在除去催化剂层之后转移 ，石墨烯纳米网到基底上。