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41.发明申请ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI 审中-公开用于形成用于ULSI铜的微波填充的电解铜镀层溶液公开(公告)号：US20120103820A1
公开(公告)日：2012-05-03
申请号：US13378529
申请日：2010-06-22
CPC分类号： C25D3/38 , C25D7/0607 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide an electrolytic copper plating solution which can suppress, upon electrolytic copper plating on a copper seed layer during fabrication of ULSI copper microwiring (damascene copper wiring) having trends to further miniaturization, dissolution of the copper seed layer and accordingly can suppress occurrence of voids on the inner wall of vias/trenches.The present invention provides an electrolytic copper plating solution for filling for forming microwiring for ULSI, characterized in that it has a pH of 1.8 or higher and 3.0 or lower. The electrolytic copper plating solution preferably comprises a saturated carboxylic acid having 1 or more and 4 or less carbon atoms at 0.01 mol/L or more and 2.0 mol/L or less.
摘要翻译： 本发明的目的是提供一种电解镀铜溶液，其可以在制造具有进一步小型化的ULSI铜微接线（镶嵌铜布线）的铜籽晶层上的电解铜电镀时抑制铜籽晶层的溶解 因此能够抑制通孔/沟槽的内壁的空隙的发生。 本发明提供一种电镀铜电镀液，用于填充用于形成ULSI的微阵列，其特征在于其pH为1.8以上且3.0以下。 电解镀铜液优选含有0.01mol / L以上且2.0mol / L以下的碳原子数为1以上且4以下的饱和羧酸。
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公开(公告)号：US20120103229A1
公开(公告)日：2012-05-03
申请号：US13382195
申请日：2010-10-25
IPC分类号： C23C18/34
摘要： An object of the present invention is to provide an aqueous solution containing divalent iron ions having improved storage stability such that oxidation over time of divalent iron ions in the aqueous solution containing divalent iron ions to trivalent iron ions is suppressed and occurrence of the precipitation of iron (III) hydroxide is prevented for long periods. The present invention relates to an aqueous solution containing divalent iron ions having improved storage stability characterized in that it comprises divalent iron ions and a hydroxylamine salt as a reducing agent and has a pH of 3.0 or lower. The pH is preferably 2.2 or lower and more preferably 1.2 or lower.
摘要翻译： 本发明的目的是提供含有二价铁离子的水溶液，其具有改善的储存稳定性，从而抑制含有二价铁离子的水溶液中的二价铁离子随时间的氧化成三价铁离子并发生铁沉淀 （III）氢氧化物长期防止。 本发明涉及包含二价铁离子的水溶液，其具有改进的储存稳定性，其特征在于其包含二价铁离子和羟胺盐作为还原剂，并且具有3.0或更低的pH。 pH优选为2.2以下，更优选为1.2以下。
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43.发明申请Electrolytic Copper Plating Method, Pure Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode 有权电解铜电镀方法，电解铜电镀纯铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US20100307923A1
公开(公告)日：2010-12-09
申请号：US12861161
申请日：2010-08-23
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在进行电解镀铜时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止颗粒附着到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘附性的阳极。
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公开(公告)号：US20120118747A1
公开(公告)日：2012-05-17
申请号：US13382201
申请日：2010-10-25
IPC分类号： C25D3/56
摘要： An object of the present invention is to provide a nickel-iron alloy plating solution which can suppress, in the nickel-iron alloy plating solution containing divalent iron ions and divalent nickel ions, oxidation of divalent iron ions to trivalent iron ions and can prevent occurrence of the precipitation of iron (III) hydroxide to allow stable continuous operations and also to provide a nickel-iron alloy plating solution which allows production of a soft magnetic film being stable in composition. The nickel-iron alloy plating solution of the present invention is characterized in that it comprises divalent iron ions, divalent nickel ions and a hydroxylamine salt and has a pH of 3.0 or lower.
摘要翻译： 本发明的目的是提供一种镍 - 铁合金电镀液，其可以抑制含有二价铁离子和二价镍离子的镍铁合金电镀溶液，将二价铁离子氧化成三价铁离子，并且可以防止发生 的氢氧化铁（III）的析出以允许稳定的连续操作，并且还提供允许制备组成稳定的软磁性膜的镍 - 铁合金电镀溶液。 本发明的镍铁合金电镀液的特征在于，其包含二价铁离子，二价镍离子和羟胺盐，pH为3.0以下。
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45.发明授权Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode 有权电解铜电镀法，电解镀铜用纯铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US07943033B2
公开(公告)日：2011-05-17
申请号：US12861161
申请日：2010-08-23
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
IPC分类号： C25D3/38
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在进行电解镀铜时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止颗粒附着到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘附性的阳极。
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