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1.发明授权Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode 有权电解铜电镀法，电解镀铜用纯铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US07799188B2
公开(公告)日：2010-09-21
申请号：US12557676
申请日：2009-09-11
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
IPC分类号： C25B11/04
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在进行电解镀铜时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止颗粒附着到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘附性的阳极。
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2.发明授权Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode 有权电解铜电镀法，电解镀铜用纯铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US07943033B2
公开(公告)日：2011-05-17
申请号：US12861161
申请日：2010-08-23
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
IPC分类号： C25D3/38
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在进行电解镀铜时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止颗粒附着到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘附性的阳极。
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3.发明授权Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode 有权电解铜电镀法，电解电镀法用的磷铜阳极，以及利用所述方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US07138040B2
公开(公告)日：2006-11-21
申请号：US10362152
申请日：2002-07-11
摘要： An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 μm when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 μm when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.
摘要翻译： 一种电解铜电镀方法，其特征在于在进行电解铜电镀时使用磷铜作为阳极，并且当电解时的阳极电流密度为3A / cm 3时，使磷铜阳极的晶粒尺寸为10〜1500μm，进行电解镀铜， dm 2以上，并且当电解中的阳极电流密度小于3A / dm 2时，使磷铜阳极的晶粒尺寸为5〜1500μm。 在这种电解镀铜方法中使用的电解铜电镀方法和磷铜阳极能够抑制电镀槽内阳极侧产生的污泥等颗粒的产生，能够防止颗粒附着在半导体晶片上 。 提供了镀上述方法的半导体晶片和具有低颗粒附着力的阳极。
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4.发明授权Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion 有权铜电镀方法，用于铜电镀的纯铜阳极和由此形成的具有很小颗粒粘附性的半导体晶片公开(公告)号：US07648621B2
公开(公告)日：2010-01-19
申请号：US10486078
申请日：2002-09-05
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
IPC分类号： C25D3/38
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more or a non-recrystallized anode. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于，在进行电解铜电镀时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜，或者 未再结晶的阳极。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止粘附到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘合力的阳极。
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5.发明申请Electrolytic Copper Plating Method, Pure Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode 有权电解铜电镀方法，电解铜电镀纯铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US20100000871A1
公开(公告)日：2010-01-07
申请号：US12557676
申请日：2009-09-11
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在进行电解铜电镀时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止颗粒附着到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘附性的阳极。
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6.发明申请Electrolytic Copper Plating Method, Pure Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode 有权电解铜电镀方法，电解铜电镀纯铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US20100307923A1
公开(公告)日：2010-12-09
申请号：US12861161
申请日：2010-08-23
申请人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
发明人： Akihiro Aiba , Takeo Okabe , Junnosuke Sekiguchi
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在进行电解镀铜时使用纯铜作为阳极，并且使用晶体直径为10μm以下或60μm以上的纯铜阳极进行电解镀铜。 提供了一种电解铜电镀方法和用于这种电解铜电镀方法的电解铜电镀纯铜阳极，其能够在进行电解镀铜时抑制在电镀槽内产生的阳极侧产生的污泥等颗粒的产生， 防止颗粒附着到半导体晶片上，以及镀上述方法的半导体晶片和具有低颗粒粘附性的阳极。
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7.发明申请ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI 审中-公开用于形成用于ULSI铜的微波填充的电解铜镀层溶液公开(公告)号：US20120103820A1
公开(公告)日：2012-05-03
申请号：US13378529
申请日：2010-06-22
CPC分类号： C25D3/38 , C25D7/0607 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide an electrolytic copper plating solution which can suppress, upon electrolytic copper plating on a copper seed layer during fabrication of ULSI copper microwiring (damascene copper wiring) having trends to further miniaturization, dissolution of the copper seed layer and accordingly can suppress occurrence of voids on the inner wall of vias/trenches.The present invention provides an electrolytic copper plating solution for filling for forming microwiring for ULSI, characterized in that it has a pH of 1.8 or higher and 3.0 or lower. The electrolytic copper plating solution preferably comprises a saturated carboxylic acid having 1 or more and 4 or less carbon atoms at 0.01 mol/L or more and 2.0 mol/L or less.
摘要翻译： 本发明的目的是提供一种电解镀铜溶液，其可以在制造具有进一步小型化的ULSI铜微接线（镶嵌铜布线）的铜籽晶层上的电解铜电镀时抑制铜籽晶层的溶解 因此能够抑制通孔/沟槽的内壁的空隙的发生。 本发明提供一种电镀铜电镀液，用于填充用于形成ULSI的微阵列，其特征在于其pH为1.8以上且3.0以下。 电解镀铜液优选含有0.01mol / L以上且2.0mol / L以下的碳原子数为1以上且4以下的饱和羧酸。
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8.发明授权Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode 有权电解铜电镀法，电解铜电镀用铜铜阳极，以及用所述方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US08252157B2
公开(公告)日：2012-08-28
申请号：US12041095
申请日：2008-03-03
申请人： Akihiro Aiba , Takeo Okabe
发明人： Akihiro Aiba , Takeo Okabe
IPC分类号： C25D17/10
摘要： An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 μm (or more) to 20,000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.
摘要翻译： 一种电解铜电镀方法，其特征在于在采用磷铜阳极的电解铜电镀方法中使用晶体尺寸为1500μm（或更多）至20,000μm的磷铜阳极。 在进行电解镀铜时，目的在于提供一种半导体晶片的电解镀铜方法，用于防止电镀液中的阳极侧产生的粒子与电镀物体如半导体晶片，磷 用于电解镀铜的铜阳极，以及用这种方法和阳极电镀的具有低颗粒粘附性的半导体晶片。
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9.发明申请Electrolytic Copper Plating Method, Phosphorous Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode 有权电解铜电镀方法，电解铜电镀用磷酸铜阳极，以及用该方法和阳极电镀的具有低颗粒粘附性的半导体晶片公开(公告)号：US20080210568A1
公开(公告)日：2008-09-04
申请号：US12041095
申请日：2008-03-03
申请人： Akihiro Aiba , Takeo Okabe
发明人： Akihiro Aiba , Takeo Okabe
摘要： An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 μm (or more) to 20,000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.
摘要翻译： 一种电解铜电镀方法，其特征在于在采用磷铜阳极的电解铜电镀方法中使用具有1500μm（或更多）至20,000μm的晶粒尺寸的磷铜阳极。 在进行电解镀铜时，目的在于提供一种半导体晶片的电解镀铜方法，用于防止电镀液中的阳极侧产生的粒子与半导体晶片，磷化物等镀敷物体的粘附 用于电解镀铜的铜阳极，以及用这种方法和阳极电镀的具有低颗粒粘附性的半导体晶片。
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10.发明授权公开(公告)号：US07374651B2
公开(公告)日：2008-05-20
申请号：US10478750
申请日：2002-11-28
申请人： Akihiro Aiba , Takeo Okabe
发明人： Akihiro Aiba , Takeo Okabe
摘要： The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 μm (or more) to 20000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.
摘要翻译： 本发明涉及一种电解铜电镀方法，其特征在于在采用磷铜阳极的电解铜电镀方法中使用具有1500mum（或更多）至20000μm的晶粒尺寸的磷铜阳极。 在进行电解镀铜时，目的在于提供一种半导体晶片的电解镀铜方法，用于防止电镀液中的阳极侧产生的粒子与半导体晶片，磷化物等镀敷物体的粘附 用于电解镀铜的铜阳极，以及用这种方法和阳极电镀的具有低颗粒粘附性的半导体晶片。
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