Quantum information processing device formation

    公开(公告)号:US11696515B2

    公开(公告)日:2023-07-04

    申请号:US16640399

    申请日:2017-12-07

    Applicant: Google LLC

    CPC classification number: H10N60/0912 G06N10/00 H10N60/01

    Abstract: A method for forming at least part of a quantum information processing device is presented. The method includes providing a first electrically-conductive layer formed of a first electrically-conductive material (100′) on a principal surface of a substrate (10), depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer (104′) on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.

    Tunable qubit coupler
    43.
    发明授权

    公开(公告)号:US11482656B2

    公开(公告)日:2022-10-25

    申请号:US16959101

    申请日:2019-06-28

    Applicant: Google LLC

    Abstract: Methods, systems and apparatus for implementing a tunable qubit coupler. In one aspect, a device includes: a first data qubit, a second data qubit, and a third qubit that is a tunable qubit coupler arranged to couple to the first data qubit and to couple to the second data qubit such that, during operation of the device, the tunable qubit coupler allows tunable coupling between the first data qubit and the second data qubit.

    PARAMETRIC AMPLIFIER FOR QUBITS
    44.
    发明申请

    公开(公告)号:US20220311400A1

    公开(公告)日:2022-09-29

    申请号:US17632923

    申请日:2020-08-03

    Applicant: Google LLC

    Abstract: A parametric traveling wave amplifier (200) is disclosed in which the amplifiers include: a co-planar waveguide, in which the co-planar waveguide includes at least one Josephson junction (210) interrupting a center trace (204) of the co-planar waveguide; and at least one shunt capacitor coupled to the co-planar waveguide, in which each shunt capacitor of the at least one shunt capacitor includes a corresponding superconductor trace (214) extending over an upper surface of the center trace of the co-planar waveguide, and in which a gap separates the superconductor trace from the upper surface of the center trace, and in which the co-planar waveguide including the at least one Josephson junction and the shunt capacitor establish a predefined overall impedance for the traveling wave parametric amplifier.

    JOSEPHSON JUNCTIONS WITH REDUCED STRAY INDUCTANCE

    公开(公告)号:US20210336121A1

    公开(公告)日:2021-10-28

    申请号:US16964053

    申请日:2019-07-25

    Applicant: Google LLC

    Abstract: Methods, systems and apparatus for forming Josephson junctions with reduced stray inductance. In one aspect, a device includes a substrate; a first superconductor layer on the substrate; an insulator layer on the first superconductor layer; a second superconductor layer on the insulator layer, wherein the first superconductor layer, the insulator layer, and the second superconductor layer form a superconductor tunnel junction; and a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second contact to the superconductor tunnel junction, respectively.

    Reducing surface loss and stray coupling in quantum devices using dielectric thinning

    公开(公告)号:US10930836B2

    公开(公告)日:2021-02-23

    申请号:US16066190

    申请日:2015-12-30

    Applicant: Google LLC

    Abstract: A quantum device includes: a substrate; and at least three co-planar structures arranged on a surface of the substrate, each co-planar structure, of the at least three co-planar structures, including a superconductor, in which a first effective dielectric constant between a first co-planar structure and a second co-planar structure that is a nearest neighbor to the first co-planar structure is above a first threshold, a second effective dielectric constant between the first co-planar structure and a third co-planar structure that is a next nearest neighbor to the first so-planar structure is less than a second threshold, and the second threshold is less than the first threshold.

    TUNABLE QUBIT COUPLER
    47.
    发明申请

    公开(公告)号:US20210036206A1

    公开(公告)日:2021-02-04

    申请号:US16959101

    申请日:2019-06-28

    Applicant: Google LLC

    Abstract: Methods, systems and apparatus for implementing a tunable qubit coupler. In one aspect, a device includes: a first data qubit, a second data qubit, and a third qubit that is a tunable qubit coupler arranged to couple to the first data qubit and to couple to the second data qubit such that, during operation of the device, the tunable qubit coupler allows tunable coupling between the first data qubit and the second data qubit.

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