Light emitting diode device and manufacturing method therof
    31.
    发明授权
    Light emitting diode device and manufacturing method therof 有权
    发光二极管器件及其制造方法

    公开(公告)号:US07821026B2

    公开(公告)日:2010-10-26

    申请号:US12230887

    申请日:2008-09-08

    IPC分类号: H01L33/00

    摘要: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

    摘要翻译: 提供了一种发光二极管(LED)器件及其制造方法,其中LED器件包括衬底,第一类型导电半导体层,有源层,第二类型导电半导体层,透明导电氧化物堆叠结构, 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上,第二电极在透明导电氧化物堆叠结构之上。

    PACKAGING PROCESS OF LIGHT EMITTING DIODE
    32.
    发明申请
    PACKAGING PROCESS OF LIGHT EMITTING DIODE 有权
    发光二极管的包装工艺

    公开(公告)号:US20100261299A1

    公开(公告)日:2010-10-14

    申请号:US12496644

    申请日:2009-07-02

    IPC分类号: H01L21/56 H01L33/00

    摘要: A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.

    摘要翻译: 提供了一种发光二极管(LED)的封装工艺。 首先,将LED芯片与载体接合以彼此电连接。 之后,载体被加热以升高其温度。 接下来,通过分配工艺在加热的载体上形成密封剂以封装LED芯片,其中在与载体接触之前,密封剂在与载体接触之前的粘度低于封装剂的粘度。 此后,密封剂固化。

    LIGHT EMITTING DIODE PACKAGE
    33.
    发明申请
    LIGHT EMITTING DIODE PACKAGE 有权
    发光二极管封装

    公开(公告)号:US20100237367A1

    公开(公告)日:2010-09-23

    申请号:US12497703

    申请日:2009-07-06

    IPC分类号: H01L33/00

    摘要: A light emitting diode (LED) package includes a carrier, an LED chip, an encapsulant, a plurality of phosphor particles, and a plurality of anti-humidity particles. The LED chip is disposed on and electrically connected to the carrier. The encapsulant encapsulates the LED chip. The phosphor particles and the anti-humidity particles are distributed within the encapsulant. A first light emitted from the LED chip excites the phosphor particles to emit a second light. Some of the anti-humidity particles are adhered onto a surface of the phosphor particles, while the other anti-humidity particles are not adhered onto the surface of the phosphor particles. The anti-humidity particles absorb H2O so as to avoid H2O from being reacted with the phosphor particles. The LED package of the present application has favorable water resistance.

    摘要翻译: 发光二极管(LED)封装包括载体,LED芯片,密封剂,多个荧光体颗粒和多个抗湿颗粒。 LED芯片设置在载体上并与其电连接。 密封剂封装了LED芯片。 荧光体颗粒和抗湿颗粒分布在密封剂内。 从LED芯片发射的第一个光线使荧光体颗粒发射第二个光。 一些抗湿颗粒附着在荧光体颗粒的表面上,而其它的防湿颗粒不附着在荧光体颗粒的表面上。 抗湿颗粒吸收H2O,以避免H2O与荧光体颗粒反应。 本申请的LED封装具有良好的耐水性。

    Light emitting diode device and manufacturing method therof
    35.
    发明申请
    Light emitting diode device and manufacturing method therof 有权
    发光二极管器件及其制造方法

    公开(公告)号:US20090057696A1

    公开(公告)日:2009-03-05

    申请号:US12222814

    申请日:2008-08-18

    IPC分类号: H01L33/00

    CPC分类号: H01L33/14

    摘要: A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

    摘要翻译: 提供了一种发光二极管器件(LED)器件及其制造方法,其中LED器件包括衬底,第一n型半导体层,n型三维电子云结构,第二n型半导体 层,有源层和p型半导体层。 随后,在基板上生长第一n型半导体层,n型三维电子云结构,第二n型半导体层,有源层和p型半导体层。

    Light-Emitting Diode and Method for Manufacturing the Same
    36.
    发明申请
    Light-Emitting Diode and Method for Manufacturing the Same 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20080157108A1

    公开(公告)日:2008-07-03

    申请号:US11669576

    申请日:2007-01-31

    IPC分类号: H01L33/00

    摘要: A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises a substrate, a reflective structure, a buffer layer and an illuminant epitaxial structure. The reflective structure is deposed on a surface of the substrate, wherein the reflective structure includes a plurality of openings set therein to define the reflective structure as a regular pattern structure and to expose a portion of the surface of the substrate. The buffer layer is deposed on the reflective structure and the exposed portion of the surface of the substrate, and fills the openings. The illuminant epitaxial structure is deposed on the buffer layer.

    摘要翻译: 描述了一种发光二极管(LED)及其制造方法。 发光二极管包括衬底,反射结构,缓冲层和发光体外延结构。 反射结构被放置在基板的表面上,其中反射结构包括设置在其中的多个开口,以将反射结构限定为规则的图案结构并且暴露基板表面的一部分。 缓冲层被放置在反射结构和衬底的表面的暴露部分上,并填充开口。 光源外延结构被放在缓冲层上。