发明申请
- 专利标题: Light-Emitting Diode and Method for Manufacturing the Same
- 专利标题(中): 发光二极管及其制造方法
-
申请号: US11669576申请日: 2007-01-31
-
公开(公告)号: US20080157108A1公开(公告)日: 2008-07-03
- 发明人: Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
- 申请人: Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
- 申请人地址: TW Tainan County
- 专利权人: EPITECH TECHNOLOGY CORPORATION
- 当前专利权人: EPITECH TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Tainan County
- 优先权: TW95149362 20061227
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises a substrate, a reflective structure, a buffer layer and an illuminant epitaxial structure. The reflective structure is deposed on a surface of the substrate, wherein the reflective structure includes a plurality of openings set therein to define the reflective structure as a regular pattern structure and to expose a portion of the surface of the substrate. The buffer layer is deposed on the reflective structure and the exposed portion of the surface of the substrate, and fills the openings. The illuminant epitaxial structure is deposed on the buffer layer.
信息查询
IPC分类: