公开(公告)号：US20170207078A1

公开(公告)日：2017-07-20

申请号：US14996225

申请日：2016-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45563 ,  H01L21/02274

Abstract: An atomic layer deposition apparatus comprises a processing chamber, at least one partition and an injector. The at least one partition is disposed in the processing chamber for dividing the processing chamber into a plurality of sections. The injector includes a plurality of nozzles disposed in the processing chamber and configured to respectively provide a reacting gaseous flow to each of the plurality of sections. A semiconductor process is also provided.