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    Semiconductor memory device
    33.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US12048143B2

    公开(公告)日：2024-07-23

    申请号：US17392775

    申请日：2021-08-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jiyoung Ahn ,  Yongseok Ahn ,  Hyunyong Kim ,  Minsub Um ,  Ju Hyung We ,  Joonkyu Rhee ,  Yoonyoung Choi

    IPC: H10B12/00

    CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/053 ,  H10B12/34 ,  H10B12/482 ,  H10B12/485

    Abstract: A semiconductor memory device includes a substrate including a device isolation pattern defining an active pattern extending in a first direction and including first and second source/drain regions, a word line extending in a second direction intersecting the first direction, a bit line that is on the word line and electrically connected to the first source/drain region and that extends in a third direction that intersects the first and second directions, a bit-line spacer on a sidewall of the bit line, a storage node contact electrically connected to the second source/drain region and spaced apart from the bit line across the bit-line spacer, and a dielectric pattern between the bit-line spacer and the storage node contact. The bit-line spacer includes a first spacer covering the sidewall of the bit line and a second spacer between the dielectric pattern and the first spacer.

    Integrated circuit device and method of manufacturing the same
    34.
    发明授权
    Integrated circuit device and method of manufacturing the same 有权

    公开(公告)号：US11637174B2

    公开(公告)日：2023-04-25

    申请号：US17036731

    申请日：2020-09-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoonyoung Choi ,  SangJae Park ,  Dongkyun Lee

    IPC: H01L49/02 ,  H01L27/108

    Abstract: An integrated circuit device including a lower electrode on a substrate, the lower electrode including a first lower electrode portion extending in a first direction perpendicular to a top surface of the substrate and including a first main region and a first top region, and a second lower electrode portion extending in the first direction on the first lower electrode portion and including a second main region and a second top region; a first top supporting pattern surrounding at least a portion of a side wall of the first top region of the first lower electrode portion; and a second top supporting pattern surrounding at least a portion of a side wall of the second top region of the second lower electrode portion, and the second lower electrode portion includes a protrusion protruding outward to the second top supporting pattern.

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