Abstract:
An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.
Abstract:
An organic light emitting display device including a thin film transistor including an active layer, a gate electrode, a source electrode, a drain electrode, a source electrode top layer on the source electrode and a drain electrode top layer on the drain electrode, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes; a pad electrode including a first pad layer at the same level as the source electrode and a second pad layer on the first pad layer and at the same level as the source and drain electrode top layers; a third insulating layer covering end portions of the source, drain, and pad electrodes and including an organic insulating layer; and a pixel electrode in an opening formed in the third insulating layer and including a semi-transmissive metal layer.
Abstract:
An organic light emitting diode display includes at least one first data line, at least one second data line, a plurality of driving transistors, and a plurality of light emitters. Each driving transistor has a driving gate electrode connected to the at least one first data line and the at least one second data line, and the light emitters are respectively connected to the driving transistors. Emission regions of the light emitter do not overlap the at least one first data line, the at least one second data line, and the driving transistors. A shielding portion overlaps an end of the at least one first data line and an end of the at least one second data line.
Abstract:
An organic light emitting display device comprises a common voltage line formed over a peripheral region of a substrate; a passivation layer formed over a pixel region of the substrate and the peripheral region; pixel electrodes formed over the pixel region; and a pixel defining layer formed over the pixel region and the peripheral region. The pixel defining layer defines pixel openings overlapping the pixel electrodes, respectively. The device further comprises organic light emitting layers formed over the pixel region, and disposed in the pixel openings and over the pixel electrodes, respectively; and a common electrode formed over the pixel and peripheral regions. The common electrode is disposed over the pixel defining layer and the organic light emitting layers. The common electrode contacts the common voltage line. The passivation layer comprises a portion overlapping the common voltage line but not overlapping the pixel defining layer.
Abstract:
An organic light emitting display device comprises a common voltage line formed over a peripheral region of a substrate; a passivation layer formed over a pixel region of the substrate and the peripheral region; pixel electrodes formed over the pixel region; and a pixel defining layer formed over the pixel region and the peripheral region. The pixel defining layer defines pixel openings overlapping the pixel electrodes, respectively. The device further comprises organic light emitting layers formed over the pixel region, and disposed in the pixel openings and over the pixel electrodes, respectively; and a common electrode formed over the pixel and peripheral regions. The common electrode is disposed over the pixel defining layer and the organic light emitting layers. The common electrode contacts the common voltage line. The passivation layer comprises a portion overlapping the common voltage line but not overlapping the pixel defining layer.
Abstract:
An organic light-emitting display (OLED) device is provided. The OLED device includes: a substrate of which a pixel region is defined; a light-condensing means disposed on the pixel region of the substrate; a lower electrode disposed on the light-condensing means; an organic layer, which is disposed on the lower electrode and includes an organic light-emitting layer; and an upper electrode disposed on the organic layer. A method for manufacturing such an OLED device is also provided.
Abstract:
The organic light emitting display device includes a substrate including a thin film transistor (TFT) formed thereon, the TFT including a first insulating layer disposed between an active layer and a gate electrode, and a second insulating layer disposed between the gate electrode and source and drain electrodes; a pad electrode including a first pad layer disposed on a same layer as that where the source and drain electrodes are formed, and a second pad layer on the first pad layer; a bonding assistant layer on the substrate; a third insulating layer on the bonding assistant layer and including a first opening; a pixel electrode disposed in the first opening and electrically coupled to one of the source and drain electrodes; and a fourth insulating layer on the pixel electrode to cover a peripheral end portion of the pixel electrode and defining a pixel through a second opening.
Abstract:
A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.
Abstract:
A display apparatus for improving corrosion resistance of a pad area and a method of manufacturing the same. The display apparatus includes a first substrate including a display area, a non-display area, and a pad area, and a second substrate facing the first substrate and corresponding to at least the display area, wherein the pad area includes, a connection area connected to a driving circuit; an exposed area spaced from the connection area; and a plurality of blocking areas between the connection area and the exposed area.
Abstract:
A display apparatus includes a substrate including a display area and a peripheral area, a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, a first inorganic insulating layer located on the substrate and under the gate electrode and covering the semiconductor layer, a second inorganic insulating layer located on the first inorganic insulating layer and covering the gate electrode, a third inorganic insulating layer located on the second inorganic insulating layer and including a 1-3th opening in the peripheral area, an organic insulating layer located on the third inorganic insulating layer, covering the source electrode and the drain electrode, and including a second opening overlapping the 1-3th opening in the peripheral area, and a pattern portion located on a layer under the organic insulating layer and overlapping the 1-3th opening and the second opening.