公开(公告)号：US20210193508A1

公开(公告)日：2021-06-24

申请号：US17003304

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geumbi Mun ,  Jinyong Kim ,  Junwon Lee ,  Kwangtae Hwang ,  Iksoo Kim ,  Jiwoon Im

IPC: H01L21/762 ,  H01L27/108 ,  H01L21/02

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.