公开(公告)号：US20120169181A1

公开(公告)日：2012-07-05

申请号：US13082961

申请日：2011-04-08

申请人： Dong Kyun Lee ,  Jung Seok Lee ,  Chuel Jin Park ,  Won Seob Oh ,  Jung Wook Hwang ,  Ki Mun Paik

发明人： Dong Kyun Lee ,  Jung Seok Lee ,  Chuel Jin Park ,  Won Seob Oh ,  Jung Wook Hwang ,  Ki Mun Paik

IPC分类号： H02N2/04

CPC分类号： H01L41/0986 ,  H01L41/083 ,  H02N2/002 ,  H02N2/0065 ,  H02N2/026 ,  H02N2/028

摘要： Disclosed herein is a piezoelectric actuator. According to the present invention, the manufacturing cost of the piezoelectric actuator can be reduced by simplifying the patterns of electrodes constituting the piezoelectric actuator, the piezoelectric actuator itself or an electronic product employing the piezoelectric actuator can be made smaller by using only planar simple translational movement of the piezoelectric actuator, and the piezoelectric actuator capable of independently performing linear translational movement in two directions on the plane can be provided.

摘要翻译： 这里公开了一种压电致动器。 根据本发明，通过简化构成压电致动器的电极的图案，可以降低压电致动器的制造成本，通过仅使用平面简单的平移运动，可以使压电致动器本身或使用压电致动器的电子产品更小 可以提供能够在平面上在两个方向上独立地进行线性平移运动的压电致动器。

公开(公告)号：US20120098132A1

公开(公告)日：2012-04-26

申请号：US13279546

申请日：2011-10-24

申请人： Cheol Hwan PARK ,  Ho Jin Cho ,  Dong Kyun Lee

发明人： Cheol Hwan PARK ,  Ho Jin Cho ,  Dong Kyun Lee

IPC分类号： H01L29/43 ,  H01L21/28

CPC分类号： H01L28/75

摘要： A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form a region exposing the storage node contact plug, forming a first conductive material within an inner side of the region, burying a second conductive material within the region in which the first conductive material is formed, and removing the sacrificial layer to form a pillar type storage node.

摘要翻译： 提供了通过改变柱型存储节点结构具有高电容的稳定结构的半导体器件及其制造方法。 该方法包括在包括存储节点接触插塞的半导体衬底上形成牺牲层，蚀刻牺牲层以形成露出存储节点接触插塞的区域，在该区域内侧形成第一导电材料，将第二导电 在其中形成第一导电材料的区域内的材料，以及去除牺牲层以形成柱状存储节点。

公开(公告)号：US08148764B2

公开(公告)日：2012-04-03

申请号：US13185873

申请日：2011-07-19

申请人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

发明人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894

摘要： A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

摘要翻译： 提出了具有高方位圆柱形电容器的半导体器件及其制造方法。 高档圆柱型电容器是一种稳定的结构，不容易造成保护环中的掩体缺陷和损失。 半导体器件包括圆柱形电容器结构，存储节点氧化物，保护环孔，导电层和封盖氧化物。 单元区域中的圆柱型电容器结构包括圆筒形下电极，电介质和上电极。 存储节点氧化物位于半导体衬底上的周边区域中。 导电层涂覆保护环孔。 在与半导体基板上的单元区域相邻的周边区域的边界处的保护环孔。 覆盖氧化物部分地填充导电层的一部分。 间隙填充膜填充在导电层的其余部分。

公开(公告)号：US20110109968A1

公开(公告)日：2011-05-12

申请号：US12646866

申请日：2009-12-23

申请人： Chuel Jin Park ,  Chul Yeub Han ,  Soo Cheol Lim ,  Jae Hyuk Park ,  Dong Kyun Lee

发明人： Chuel Jin Park ,  Chul Yeub Han ,  Soo Cheol Lim ,  Jae Hyuk Park ,  Dong Kyun Lee

IPC分类号： G02B27/64 ,  G02B7/02 ,  G03B17/00

CPC分类号： G03B17/00 ,  H04N5/2253 ,  H04N5/2257 ,  H04N5/23248 ,  H04N5/23258 ,  H04N5/23287

摘要： Disclosed herein is an image stabilization mechanism for a camera module. The image stabilization mechanism includes a base, a movable stage receiving a lens barrel therein and having a magnet, and a piezoelectric actuator. The piezoelectric actuator is installed to the base, moves the movable stage in an X-axis or Y-axis direction to remove shake of the lens barrel, and maintains contact with the movable stage because of magnetic attractive force between the piezoelectric actuator and the magnet. The image stabilization mechanism reduces the number of components, thus simplifying the structure and minimizing an increase in height.

摘要翻译： 本文公开了一种用于相机模块的图像稳定机构。 图像稳定机构包括底座，可移动台，其中容纳镜筒并具有磁体，以及压电致动器。 压电致动器安装在基座上，使可移动台沿X轴或Y轴方向移动，以消除镜筒的抖动，由于压电致动器和磁体之间的磁吸引力而保持与可移动台的接触 。 图像稳定机构减少了部件的数量，从而简化了结构并最大程度地降低了高度。

公开(公告)号：US07723183B2

公开(公告)日：2010-05-25

申请号：US12499248

申请日：2009-07-08

申请人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Soo Kim ,  Dong Kyun Lee

发明人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Soo Kim ,  Dong Kyun Lee

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

摘要翻译： 通过在具有存储节点接触插塞的半导体衬底上形成缓冲氧化物层，蚀刻停止层和模具绝缘层来制造电容器。 蚀刻模具绝缘层和蚀刻停止层，以在存储节点接触插塞的上部形成孔。 在包括孔的模具绝缘层上沉积渐缩层。 锥形层和缓冲氧化物层被回蚀刻，使得锥形层仅保留在蚀刻孔的上端部。 在剩余的锥形层上形成在蚀刻孔上的金属储存节点层。 去除模具绝缘层和剩余的锥形层以形成具有锥形上端的圆柱形存储节点。 在存储节点上形成介电层和板状节点。