公开(公告)号：US20240055412A1

公开(公告)日：2024-02-15

申请号：US18232042

申请日：2023-08-09

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo KIM ,  Changseo PARK ,  Gunho KIM ,  Jungsub KIM

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/38 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/44

Abstract: Discussed is a semiconductor light emitting device package for a display pixel The semiconductor light emitting device package can include a first semiconductor light emitting device of a first color having a first material and a second semiconductor light emitting device of a second color having a second material disposed on the first semiconductor light emitting device. The first semiconductor light emitting device can include a first semiconductor light emitting structure having an inner recess, and a first-first electrode and first-second electrode layer electrically connected to a first side and a second side of the first semiconductor light emitting structure, respectively. The second semiconductor light emitting device can be disposed in the inner recess of the first semiconductor light emitting device.

公开(公告)号：US20230060259A1

公开(公告)日：2023-03-02

申请号：US17736812

申请日：2022-05-04

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo KIM ,  Changseo PARK ,  Gunho KIM ,  Minwoo LEE ,  Jungsub KIM

IPC: H01L25/075 ,  H01L33/38

Abstract: An overlapping assembly substrate structure for semiconductor light emitting devices, includes a first assembly substrate structure and a second assembly substrate structure disposed spaced apart from each other. The first assembly substrate structure can include a first electrode and a second electrode spaced apart by a first distance and a first partition wall having a circular first assembly hole to accommodate a semiconductor light emitting device having a circular shape. Further, the second assembly substrate structure can include a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and a second partition wall having an elliptical second assembly hole to accommodate a semiconductor light emitting device having an elliptical shape.

公开(公告)号：US20230014515A1

公开(公告)日：2023-01-19

申请号：US17621399

申请日：2019-07-10

Applicant: LG ELECTRONICS INC.

Inventor： Jungsub KIM ,  Junghoon KIM ,  Changseo PARK

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/00

Abstract: The present specification provides a micro LED display device which minimizes a short-circuit fault by using a semiconductor light emitting element including multiple passivation layers formed therein, and a manufacturing method thereof. In a display device using a plurality of semiconductor light emitting elements according to one embodiment of the present invention, at least one of the semiconductor light emitting elements comprises: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer; a first conductive electrode; a second conductive electrode; and a first passivation layer and a second passivation layer successively disposed to surround the lateral surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the second passivation layer is positioned in a region excluding parts in contact with a first electrode and a second electrode, on the first conductive electrode and the second conductive electrode.

公开(公告)号：US20220336423A1

公开(公告)日：2022-10-20

申请号：US17633100

申请日：2019-08-07

Applicant: LG ELECTRONICS INC.

Inventor： Jungsub KIM ,  Yongdae KIM ,  Yoonchul KIM ,  Changseo PARK ,  Jina JEON

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: Disclosed in the present specification are a substrate for transferring, with high reliability, a semiconductor light emitting element, and a method for manufacturing a display device by using same. Particularly, when a semiconductor light emitting element is self-assembled on an assembly substrate by using an electromagnetic field, an assembly groove in which a semiconductor light emitting element for alignment is assembled is formed in the assembly substrate. The semiconductor light emitting element for alignment, assembled in the assembly groove, is used for alignment in a step of being transferred to a final wiring substrate. Unlike conventional alignment keys, the semiconductor light emitting element for alignment reflects an alignment error of semiconductor light emitting elements that occurs during a transfer process after assembly. Therefore, when semiconductor light emitting elements are transferred to a wiring substrate on the basis of the semiconductor light emitting element for alignment, transfer accuracy can be improved.

公开(公告)号：US20220302092A1

公开(公告)日：2022-09-22

申请号：US17833624

申请日：2022-06-06

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Bongchu SHIM

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: Discussed is a display device, including a substrate including a dielectric layer, a plurality of semiconductor light-emitting devices respectively accommodated on the substrate, and a first electrode provided with a plurality of electrode lines arranged on a bottom of the substrate. Each of the first electrode includes a pair of electrode lines spaced from each other on an upper surface of the dielectric layer among the plurality of electrode lines. Each semiconductor light-emitting device is disposed on the pair of electrode lines, and the pair of electrode lines have the same electrical pole.

公开(公告)号：US20220157759A1

公开(公告)日：2022-05-19

申请号：US17431854

申请日：2020-02-06

Applicant: LG ELECTRONICS INC.

Inventor： Seongmin MOON ,  Changseo PARK ,  Kiseong JEON

IPC: H01L23/00 ,  H01L25/075 ,  H01L33/44

Abstract: A display device and a method of making the display device are discussed. The display device includes a substrate, a plurality of partition walls disposed on the substrate, a plurality of semiconductor light emitting elements disposed on the substrate and disposed between the plurality of partition walls, and a passivation layer covering at least parts of the plurality of semiconductor light emitting elements and at least parts of the plurality of partition walls, wherein the passivation layer extends from side surfaces of the plurality of partition walls in a direction toward the plurality of semiconductor light emitting elements, so as to cover at least parts of the side surfaces of the plurality of partition walls and at least the parts of the plurality of semiconductor light emitting elements.

公开(公告)号：US20190326144A1

公开(公告)日：2019-10-24

申请号：US16388394

申请日：2019-04-18

Applicant: LG ELECTRONICS INC.

Inventor： Bongchu SHIM ,  Dohee KIM ,  Changseo PARK ,  Hyunwoo CHO

IPC: H01L21/67 ,  H01L25/075 ,  H01L33/62 ,  H01L33/00 ,  B65G47/92

Abstract: The present invention relates to a device and method for self-assembling semiconductor light-emitting diodes. Particularly, a method for manufacturing a display device according to the present invention includes: feeding a substrate to an assembly site and putting semiconductor light-emitting diodes having a magnetic material into a fluid chamber; applying a magnetic force to the semiconductor light-emitting diodes so that the semiconductor light-emitting diodes move in one direction within the fluid chamber; and guiding the semiconductor light-emitting diodes to preset positions on the substrate by applying an electric field, so that the semiconductor light-emitting diodes are mounted at the preset positions while in the process of being moved.

公开(公告)号：US20180240937A1

公开(公告)日：2018-08-23

申请号：US15751970

申请日：2016-08-22

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Kiseong JEON ,  Jinhong PARK ,  Hwankuk YUH

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/62 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22 ,  H05K1/11

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/44 ,  H01L33/502 ,  H01L33/62 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22 ,  H05K1/111 ,  H05K2201/0145 ,  Y02B20/42 ,  Y02B20/48

Abstract: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.

公开(公告)号：US20180233621A1

公开(公告)日：2018-08-16

申请号：US15950477

申请日：2018-04-11

Applicant: LG ELECTRONICS INC.

Inventor： Goohwan SHIM ,  Changseo PARK ,  Philwon YOON ,  Yoonsil JIN ,  Jinsung KIM ,  Youngho CHOE ,  Jaewon CHANG

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell includes forming an emitter layer on a first surface of a substrate, forming a back surface field layer on a second surface opposite the first surface of the substrate, forming a first anti-reflection layer on the emitter layer, forming a second anti-reflection layer on the back surface field layer, and forming a plurality of first electrodes each including a first metal seed layer and a first conductive layer on a plurality of first contact regions of the first anti-reflection film and a plurality of second electrodes each including a second metal seed layer and a second conductive layer on a plurality of second contact regions of the second anti-reflection film, the plurality of first contact regions being partially formed at the first anti-reflection layer and each having a first width.

公开(公告)号：US20170170340A1

公开(公告)日：2017-06-15

申请号：US15443331

申请日：2017-02-27

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Yoonsil JIN ,  Youngho CHOE

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/02168 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.