Pattern forming method
    33.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号:US07842452B2

    公开(公告)日:2010-11-30

    申请号:US12331136

    申请日:2008-12-09

    IPC分类号: G03F7/30

    摘要: A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.

    摘要翻译: 使用正性抗蚀剂组合物的图案形成方法包括:(A)能够在酸作用下增加其在碱性显影剂中的溶解度的无硅树脂; (B)能够在用光化射线或辐射照射时能产生酸的化合物; (C)具有选自(X)碱溶性基团中的至少一种的基团的含硅树脂(XI)能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度(C )和(XII)能够在酸的作用下分解并增加树脂(C)在碱性显影剂中的溶解度的基团,和(D)溶剂,该方法包括:(i)步骤 将正性抗蚀剂组合物施加到基材上以形成抗蚀剂涂层,(ii)通过浸渍液体将抗蚀剂涂层曝光于光的步骤,(iii)去除残留在抗蚀剂涂层上的浸渍液体的步骤,(iv )加热抗蚀剂涂层的步骤,和(v)显影抗蚀涂层的步骤。

    Positive resist composition and pattern making method using the same
    34.
    发明授权
    Positive resist composition and pattern making method using the same 有权
    正抗蚀剂组合物和使用其的图案制造方法

    公开(公告)号:US07790351B2

    公开(公告)日:2010-09-07

    申请号:US12363303

    申请日:2009-01-30

    IPC分类号: G03F7/00 G03F7/004

    摘要: A positive resist composition comprising: (A) a resin showing an increase in the solubility in an alkali developer by the action of an acid; (B) a compound being capable of generating an acid when irradiated with an actinic ray or a radiation; (C) a resin having a silicon-containing repeating unit of a specific structure and being stable to acids but insoluble in an alkali developer; and (D) a solvent; and a pattern making method using the same.

    摘要翻译: 一种正型抗蚀剂组合物,其包含:(A)通过酸的作用显示在碱性显影剂中的溶解度增加的树脂; (B)当用光化射线或辐射照射时能够产生酸的化合物; (C)具有特定结构的含硅重复单元并且对酸稳定但不溶于碱显影剂的树脂; 和(D)溶剂; 和使用该图案的图案制作方法。

    Positive resist composition and pattern forming method using the same
    35.
    发明授权
    Positive resist composition and pattern forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07785767B2

    公开(公告)日:2010-08-31

    申请号:US12328725

    申请日:2008-12-04

    申请人: Hiromi Kanda

    发明人: Hiromi Kanda

    IPC分类号: G03F7/00 G03F7/004

    摘要: A positive resist composition, which comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having a repeating unit represented by formula (C) as defined in the specification; and (D) a solvent, wherein a content of the resin as the component (C) is from 0.1 to 20 mass % based on a solid content of the positive resist composition, and a pattern forming method using the same.

    摘要翻译: 一种正型抗蚀剂组合物,其包含:(A)具有单环或多环脂环族烃结构的树脂,其在碱显影剂中的溶解度在酸的作用下增加; (B)能够在用光化射线或辐射照射时能够产生酸的化合物; (C)具有本说明书中定义的式(C)表示的重复单元的树脂; 和(D)溶剂,其中作为成分(C)的树脂的含量相对于正性抗蚀剂组合物的固体成分为0.1〜20质量%,使用该溶剂的图案形成方法。

    Positive resist composition and pattern forming method using the same
    36.
    发明授权
    Positive resist composition and pattern forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07771912B2

    公开(公告)日:2010-08-10

    申请号:US11636517

    申请日:2006-12-11

    IPC分类号: G03F7/039 G03F7/20 G03F7/30

    摘要: A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R1 represents a hydrogen atom or an alkyl group; R2 represents a fluoroalkyl group; R3 represents a hydrogen atom or a monovalent organic group; R4 to R7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R4 to R7 represents a fluorine atom, and R4 and R5, or R6 and R7 may combine to form a ring; R8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.

    摘要翻译: 正型抗蚀剂组合物包括:(A)在酸性作用下在碱性显影剂中的溶解度增加的树脂,(B)在用光化射线或辐射照射时能够产生酸的化合物,(C)具有 选自由下式(1-1),(1-2)和(1-3)表示的含氟原子的重复单元中的至少一种重复单元,该树脂对酸稳定且不溶于碱性显影剂, 和(D)溶剂:其中R1表示氢原子或烷基; R2表示氟代烷基; R3表示氢原子或一价有机基团; R4至R7各自独立地表示氢原子,氟原子,烷基,氟烷基,烷氧基或氟烷氧基,条件是R4至R7中的至少一个表示氟原子,R4和R5,或 R6和R7可以结合形成环; R8表示氢原子,氟原子或一价有机基团; Rf表示氟原子或含氟原子的一价有机基团; L表示单键或二价连接基团; Q表示脂环结构; k表示0〜3的整数。

    Positive resist composition and pattern forming method
    37.
    发明授权
    Positive resist composition and pattern forming method 有权
    正抗蚀剂组成和图案形成方法

    公开(公告)号:US07666574B2

    公开(公告)日:2010-02-23

    申请号:US12058327

    申请日:2008-03-28

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive photosensitive composition comprises (A) a resin that has an acid decomposable repeating unit represented by formula (I) and increases its solubility in an alkali developer by action of an acid; (B) a compound generating an acid in irradiation with actinic light or radiation; (C) a resin that contains neither fluorine nor silicon and has a repeating unit having the predetermined structure; and (D) a solvent, wherein each symbol represents a predetermined group.

    摘要翻译: 正型光敏组合物包含(A)具有由式(I)表示的可酸分解重复单元并通过酸作用增加其在碱性显影剂中的溶解度的树脂; (B)在光化或辐射照射下产生酸的化合物; (C)既不含氟也不含硅且具有预定结构的重复单元的树脂; 和(D)溶剂,其中每个符号表示预定的基团。

    Positive resist composition and method of pattern formation with the same
    38.
    发明申请
    Positive resist composition and method of pattern formation with the same 有权
    积极的抗蚀剂组成和图案形成方法相同

    公开(公告)号:US20070178405A1

    公开(公告)日:2007-08-02

    申请号:US11492123

    申请日:2006-07-25

    IPC分类号: G03C1/00

    摘要: A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

    摘要翻译: 一种正型抗蚀剂组合物,其包含:(A)通过酸的作用在碱性显影液中具有增强的溶解度的树脂; (B)在用光化射线或辐射照射时产生酸的化合物; (C)含有选自(x)〜(z)中的至少一种基团的含氟化合物; 和(F)溶剂,以及组合物的图案形成方法:(x)碱溶性基团; (y)通过碱性显影液的作用分解以提高在碱性显影液中的溶解度的基团; 和(z)通过酸的作用分解的基团。

    Positive resist composition and pattern forming method using the same
    39.
    发明申请
    Positive resist composition and pattern forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US20070148595A1

    公开(公告)日:2007-06-28

    申请号:US11645780

    申请日:2006-12-27

    申请人: Hiromi Kanda

    发明人: Hiromi Kanda

    IPC分类号: G03C1/00

    摘要: A positive resist composition, which comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having a repeating unit represented by formula (C) as defined in the specification; and (D) a solvent, wherein a content of the resin as the component (C) is from 0.1 to 20 mass % based on a solid content of the positive resist composition, and a pattern forming method using the same.

    摘要翻译: 一种正型抗蚀剂组合物,其包含:(A)具有单环或多环脂环族烃结构的树脂,其在碱显影剂中的溶解度在酸的作用下增加; (B)能够在用光化射线或辐射照射时能够产生酸的化合物; (C)具有本说明书中定义的式(C)表示的重复单元的树脂; 和(D)溶剂,其中作为成分(C)的树脂的含量相对于正性抗蚀剂组合物的固体成分为0.1〜20质量%,使用该溶剂的图案形成方法。

    Positive resist composition and pattern making method using the same
    40.
    发明申请
    Positive resist composition and pattern making method using the same 失效
    正抗蚀剂组合物和使用其的图案制造方法

    公开(公告)号:US20070134590A1

    公开(公告)日:2007-06-14

    申请号:US11636633

    申请日:2006-12-11

    IPC分类号: G03C1/00

    摘要: A positive resist composition comprising: (A) a resin showing an increase in the solubility in an alkali developer by the action of an acid; (B) a compound being capable of generating an acid when irradiated with an actinic ray or a radiation; (C) a resin having a silicon-containing repeating unit of a specific structure and being stable to acids but insoluble in an alkali developer; and (D) a solvent; and a pattern making method using the same.

    摘要翻译: 一种正型抗蚀剂组合物,其包含:(A)通过酸的作用显示在碱性显影剂中的溶解度增加的树脂; (B)当用光化射线或辐射照射时能够产生酸的化合物; (C)具有特定结构的含硅重复单元并且对酸稳定但不溶于碱显影剂的树脂; 和(D)溶剂; 和使用该图案的图案制作方法。