摘要:
According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.
摘要:
A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element.