摘要:
There is provided a dielectric material containing no sulfur (S), and there is provided an information recording medium that affords high signal quality and excellent recording sensitivity and repeated rewrite characteristics, even though no interface layer is provided between a reflective layer and a dielectric layer. To this end, the present invention is an information recording medium that is equipped with at least a recording layer and undergoes phase change when the recording layer is irradiated with a laser beam or when current is applied, comprising an oxide-fluoride dielectric layer that includes indium (In), an element M1 (where M1 is at least one element selected from among Zr, Hf, Y, Ti, Nb, Ta, Cr, Ga, and Si), oxygen (O), an element M2 (where M2 is at least one element selected from among La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Yb, Mg, Ca, and Sr), and fluorine (F).
摘要:
There is provided a dielectric material containing no sulfur (S), and there is provided an information recording medium that affords high signal quality and excellent recording sensitivity and repeated rewrite characteristics, even though no interface layer is provided between a reflective layer and a dielectric layer. To this end, the present invention is an information recording medium that is equipped with at least a recording layer and undergoes phase change when the recording layer is irradiated with a laser beam or when current is applied, comprising an oxide-fluoride dielectric layer that includes indium (In), an element M1 (where M1 is at least one element selected from among Zr, Hf, Y, Ti, Nb, Ta, Cr, Ga, and Si), oxygen (O), an element M2 (where M2 is at least one element selected from among La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Yb, Mg, Ca, and Sr), and fluorine (F).
摘要:
The present invention makes it possible to obtain a low-cost information recording medium that has fewer layers and has high signal quality and excellent repeated re-write characteristics, without using sulfur as a material for the dielectric layers. Thus, an information recording medium for recording or reproducing information, said information recording medium comprises a layer that contains Ce—F.
摘要:
An information recording medium is provided that has high recording sensitivity and high erasability, even when a recording layer thereof is as thin as about 3 nm. An information recording medium 15 on which information can be recorded by applying light or electrical energy has at least a recording layer 104 that undergoes phase change, while the recording layer 104 contains at least one element selected from among Zn, Si and C, and Sb in total proportion of 85 atomic % or more and has a composition preferably represented by the formula Sb100-a1M1a1 (atomic %) (wherein M1 represents at least one element selected from among Zn, Si and C, and a1 is a proportion in terms of atomic % that satisfies a relationship of 0
摘要:
An information recording medium (100) of the present invention is an information recording medium that allows information to be recorded thereon by being irradiated with an optical beam or by being applied with electrical energy, and includes at least a recording layer (115) whose phase can change. The recording layer (115) contains antimony (Sb), carbon (C), and a light element (L) having an atomic weight of less than 33. The light element (L) preferably is at least one element selected from B, N, O, Mg, Al, and S. For example, the recording layer (115) may be composed of a material represented by a composition Sb100-x-yCxLy, where the subscripts 100-x-y, x, and y denote composition ratios of Sb, C, and the L in atomic percentage, respectively, and x and y satisfy x+y≦50.
摘要:
In an information recording medium on and from which information is recorded and reproduced by applying light or electric energy, a recording layer which generates reversible phase change is formed so as to include a material containing Ge, Bi, Te and an element “M” which material is expressed with (GeTe)x[(M2Te3)y(Bi2Te3)1-y]100-x (mol %) wherein “M” represents at least one element selected from Al, Ga and In, and “x” and “y” satisfy 80≦x
摘要翻译:在通过施加光或电能记录和再现信息的信息记录介质中,形成产生可逆相变的记录层,以便包括含有Ge,Bi,Te和元素“M”的材料, 材料用(GeTe)x [(M2Te3)y(Bi2Te3)1-y] 100-x(mol%)表示,其中“M”表示选自Al,Ga和In中的至少一种元素,“x”和“ y“满足80&nlE; x <100和0
摘要:
An information recording medium is provided that has high recording sensitivity and high erasability, even when a recording layer thereof is as thin as about 3 nm. An information recording medium 15 on which information can be recorded by applying light or electrical energy has at least a recording layer 104 that undergoes phase change, while the recording layer 104 contains at least one element selected from among Zn, Si and C, and Sb in total proportion of 85 atomic % or more and has composition preferably represented by the formula Sb100-a1M1a (atomic %) (wherein M1 represents at least one element selected from among Zn, Si and C, and al is a proportion in term of atomic % that satisfies a relationship of 0
摘要:
The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.
摘要:
An information recording medium of the present invention includes a substrate and an information layer arranged on the substrate. The information layer includes a recording layer that is changed in phase reversibly between a crystalline phase and an amorphous phase by at least one of optical means and electrical means, and at least one crystalline nucleation layer that contains at least one element selected from Bi and Te and at least one element (M1) selected from Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu and is provided in contact with the recording layer.
摘要:
An information recording medium is provided that has high recording sensitivity for recording information and superior repeated rewriting performance. The information recording medium has at least a recording layer that is changeable between a crystalline phase and an amorphous phase by applying a laser beam or electric current and a dielectric layer. The dielectric layer contains at least C, Si, Sn and O. Alternatively, the information recording medium includes at least two information layers with at least one of the information layer including at least a recording layer that is changeable between a crystalline phase and an amorphous phase by applying a laser beam or electric current and a dielectric layer. The dielectric layer contains at least C, Si, Sn and O.