公开(公告)号：US5254873A

公开(公告)日：1993-10-19

申请号：US962546

申请日：1992-10-19

申请人： Stephen S. Poon ,  Papu D. Maniar

发明人： Stephen S. Poon ,  Papu D. Maniar

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  H01L27/02 ,  H01L23/48

CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/76224

摘要： A trench structure (10) using germanium silicate. The trench structure (10) has a substrate material (12) and a hard mask material (14) that overlies the substrate material (12). An opening is formed in the hard mask material and the opening is used to form a trench (16) in the substrate material (12). The trench (16) has a sidewall portion and a bottom portion. A barrier (18 and 20) is formed overlying the bottom portion of the trench (16) and adjacent to the sidewall portion of the trench (16). A planar germanium silicate region (22) is formed overlying the barrier (18 and 20).

摘要翻译： 使用硅酸锗的沟槽结构（10）。 沟槽结构（10）具有衬底材料（12）和覆盖在衬底材料（12）上的硬掩模材料（14）。 在硬掩模材料中形成开口，并且开口用于在基底材料（12）中形成沟槽（16）。 沟槽（16）具有侧壁部分和底部部分。 形成覆盖在沟槽（16）的底部并与沟槽（16）的侧壁部分相邻的势垒（18和20）。 在屏障（18和20）上方形成平坦的硅酸锗区域（22）。

公开(公告)号：US5186745A

公开(公告)日：1993-02-16

申请号：US650119

申请日：1991-02-04

申请人： Papu D. Maniar

发明人： Papu D. Maniar

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L23/31 ,  H01L23/532

CPC分类号： H01L21/3121 ,  H01L21/316 ,  H01L23/3171 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/19041

摘要： In on form, a TEOS based spin-on-glass is made having on the order of 10% to 25% by volume of tetraethylorthosilicate, the equivalent of on the order of 0.1% to 3.0% by volume of 70% concentrated nitric acid, on the order of 60% to 90% by volume of alcohol, and the balance water. The spin-on-glass is applied to a semiconductor substrate and heated in order to densify the spin-on-glass.