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公开(公告)号：US20230327406A1
公开(公告)日：2023-10-12
申请号：US18193980
申请日：2023-03-31
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Hitoshi YAMADA , Yuki KAMATA , Koichi OYAMA , Yutaka OHNISHI , Kenichi NISHI , Keizo TAKEMASA
CPC classification number: H01S5/3412 , C09K11/7492 , B82Y20/00
Abstract: In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.
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公开(公告)号：US20230280539A1
公开(公告)日：2023-09-07
申请号：US18145109
申请日：2022-12-22
Inventor： MASATOSHI TSUJI , HIROSHI ANDO
Abstract: An optical member includes a light guide having: an incident surface on which an external scene light is incident from a blind area; a first reflecting surface that reflects light from the incident surface; and a second reflecting surface that reflects light reflected by the first reflecting surface. The optical member further includes a prism having: an exit surface that emits light from the incident surface and light reflected by the second reflecting surface to outside; and a light shielding surface connected to the exit surface to intersect the exit surface. A light from the incident surface and a light reflected by the second reflecting surface are incident on the light shielding surface. The light shielding surface has a rough surface, and a surface roughness of the rough surface is larger than a surface roughness of the exit surface.
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公开(公告)号：US20230208435A1
公开(公告)日：2023-06-29
申请号：US17967095
申请日：2022-10-17
Inventor： Kofi Afolabi Anthony MAKINWA , ZHONG TANG
IPC: H03M3/00
Abstract: A delta-sigma modulation type A/D converter includes: a capacitively coupled amplifier having a sampling capacitor, a feedback capacitor, and an amplifier; a correlated double sampling type first integrator as a first-stage integrator, which is connected to the capacitively coupled amplifier without a switch; a second integrator arranged after the first integrator; a quantizer arranged after the second integrator and quantizing an output of the second integrator; and an D/A converter that D/A-converts an output of the quantizer and feeds back to any one of the capacitively coupled amplifier, the first integrator, and the second integrator.
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公开(公告)号：US20230207418A1
公开(公告)日：2023-06-29
申请号：US18054299
申请日：2022-11-10
Inventor： MASAYUKI KAMIYA
IPC: H01L23/373 , H01L23/31
CPC classification number: H01L23/3735 , H01L23/3121 , H01L24/32 , H01L2224/32245
Abstract: A semiconductor module includes an insulating plate, a graphite plate and a semiconductor element. The graphite plate is provided by a stack of graphene layers. The graphite plate has a first surface joined to the insulating plate, and a second surface opposite to the first surface. The semiconductor element is disposed adjacent to the second surface of the graphite plate. The insulating plate extends from the graphite plate in a plan view in a direction normal to the graphite plate.
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公开(公告)号：US20230116208A1
公开(公告)日：2023-04-13
申请号：US17960981
申请日：2022-10-06
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , HAMAMATSU PHOTONICS K.K.
Inventor： TAKASHI USHIJIMA , KOZO KATO , YOSHITAKA NAGASATO , MASATAKE NAGAYA , SHINICHI HOSHI , DAISUKE KAWAGUCHI , KEISUKE HARA
IPC: H01L21/762 , H01L21/268 , H01L21/67
Abstract: A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.
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Patent Agency Ranking
公开(公告)号：US20230062515A1
公开(公告)日：2023-03-02
申请号：US17868057
申请日：2022-07-19
Inventor： Shigeki OTSUKA , Hyoungjun NA , Takasuke ITO , Yoshikazu FURUTA , Tomohiro NEZUKA
IPC: H04L25/02 , H03K17/687
Abstract: A differential transmission circuit for a communication device performs bidirectional communication via a differential transmission line. The differential transmission circuit include: output transistors that are turned on and off according to a drive signal during a transmission period; a signal generation unit that generates and outputs the drive signal; short-circuit transistors connected between gates and drains of the output transistors; and a cut off unit that cuts off a supply path of the drive signal between the signal generation unit and the gates of the output transistors. The cut off unit cuts off the supply path of the drive signal during a reception period in which a reception operation is performed by the communication device.
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37.发明申请公开(公告)号：US20230061042A1
公开(公告)日：2023-03-02
申请号：US17884111
申请日：2022-08-09
Inventor： Katsuaki GOTO , Shota HARADA , Keitaro ITO , Yuuki INAGAKI , Takahiko YOSHIDA , Yusuke KAWAI
Abstract: In a method for manufacturing a micro vibration body having a three-dimensional curved surface, a mold defining a recess part is prepared, and a plate-shaped reflow material is arranged on the mold so as to cover the recess part. Pressure of a space defined by the recess part covered with the reflow material is reduced, and the reflow material is deformed by heating from an upper surface side opposite to a lower surface facing the recess part and by means of the pressure reduced. When the reflow material is deformed, a part of the mold is heated and / or cooled. As another example, when the reflow material is deformed, a mold having a different heat capacity portion is used to generate a temperature gradient in the mold.
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公开(公告)号：US20230060555A1
公开(公告)日：2023-03-02
申请号：US17891313
申请日：2022-08-19
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
Inventor： MEGUMI SUZUKI , TOMOYA JOKE , HIDEO YAMADA , SHUJI KATAKAMI , TAKAHIDE USUI , TAKASHI KAKEFUDA , NAOKI MASUMOTO
IPC: H01L41/09 , H01L41/18 , H01L41/08 , H01L41/047
Abstract: A piezoelectric element includes a support member, a vibrator, a through electrode and a seed layer. The vibrator is disposed on an insulation film of the support member, and includes a piezoelectric film and an electrode coating film electrically connected to the piezoelectric film. The vibrator has a support region and a vibration region. The through electrode is electrically connected to the electrode coating film at the support region, and is disposed in a stacking direction of the support member and the vibrator. Between the piezoelectric film and the insulation film, the seed layer is disposed at a portion of the electrode coating film facing another portion of the electrode coating film connected to the through electrode in the stacking direction. The seed layer is made of material having a lattice constant closer to the piezoelectric film or material easier to cause the piezoelectric film to be self-aligned.
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公开(公告)号：US20230055691A1
公开(公告)日：2023-02-23
申请号：US17875547
申请日：2022-07-28
Inventor： TOMOHIRO NEZUKA , YOSHIKAZU FURUTA , SHOTARO WADA
Abstract: A current sensor for a detection target current using a shunt resistor includes: a resistance value correction circuit having a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a voltage detection unit that detects terminal voltages of the shunt resistor and the correction resistor; and a correction unit that calculates a resistance value of the shunt resistor and corrects the resistance value for detection; and a power supply circuit having a first power supply generation unit that generates a first power supply of the signal application unit from an input power supply of an outside; and a second power supply generation unit that generates a second power supply of the voltage detection unit.
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公开(公告)号：US20230042847A1
公开(公告)日：2023-02-09
申请号：US17879056
申请日：2022-08-02
Inventor： FAN CHENG , YUKI ANNO , YOSHINORI TSUCHIYA
IPC: A61B7/04
Abstract: A biological sound detection device includes a housing, a medium, a transducer unit, a detection unit, and a pressure adjusting unit. The medium has an acoustic impedance closer to water than air. The transducer unit is arranged in the housing, and converts a biological sound transmitted through the medium into an electric signal. The detection unit provides, together with the housing, an accommodation region that accommodates the medium, detects the biological sound, transmits the biological sound to the medium, and is deformable in a direction approaching the transducer unit according to a load of a physical body. The pressure adjusting unit adjusts a pressure of the medium so as to suppress an increase in the pressure of the medium due to deformation of the detection unit.
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