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公开(公告)号：US20060022209A1
公开(公告)日：2006-02-02
申请号：US10899793
申请日：2004-07-27
Applicant: Kevin Haberern , Michael Bergmann , Van Mieczkowski , David Emerson
Inventor： Kevin Haberern , Michael Bergmann , Van Mieczkowski , David Emerson
CPC classification number: H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
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公开(公告)号：US08759868B2
公开(公告)日：2014-06-24
申请号：US13271865
申请日：2011-10-12
Applicant: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
Inventor： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
CPC classification number: H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
Abstract translation: 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。
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33.发明授权Light emitting devices having roughened/reflective contacts and methods of fabricating same 有权具有粗糙/反射触点的发光器件及其制造方法公开(公告)号：US08669563B2
公开(公告)日：2014-03-11
申请号：US12476519
申请日：2009-06-02
Applicant: Kevin Haberern , Michael John Bergmann , Van Mieczkowski , David Todd Emerson
Inventor： Kevin Haberern , Michael John Bergmann , Van Mieczkowski , David Todd Emerson
IPC: H01L27/15
CPC classification number: H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
Abstract translation: 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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公开(公告)号：USD689830S1
公开(公告)日：2013-09-17
申请号：US29383908
申请日：2011-01-24
Applicant: Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider
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公开(公告)号：USD682225S1
公开(公告)日：2013-05-14
申请号：US29383910
申请日：2011-01-24
Applicant: Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schnelder
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Patent Agency Ranking
公开(公告)号：USD675581S1
公开(公告)日：2013-02-05
申请号：US29396907
申请日：2011-07-08
Applicant: Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider
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37.发明申请LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME 有权具有粗糙/反射性接触的发光装置及其制造方法公开(公告)号：US20120080709A1
公开(公告)日：2012-04-05
申请号：US13313302
申请日：2011-12-07
Applicant: Kevin Haberern , Michael John Bergmann , Van Mieczkowski , David Todd Emerson
Inventor： Kevin Haberern , Michael John Bergmann , Van Mieczkowski , David Todd Emerson
CPC classification number: H01L33/42 , H01L24/05 , H01L33/405 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
Abstract translation: 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。
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公开(公告)号：US20120080688A1
公开(公告)日：2012-04-05
申请号：US13271865
申请日：2011-10-12
Applicant: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
Inventor： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
CPC classification number: H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
Abstract translation: 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。
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公开(公告)号：US08089090B2
公开(公告)日：2012-01-03
申请号：US11191111
申请日：2005-07-27
Applicant: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
Inventor： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC: H01L29/22
CPC classification number: H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
Abstract translation: 基于半导体的发光器件（LED）可以在p型氮化物层上包括p型氮化物层和金属欧姆接触。 金属欧姆接触可以具有小于约的平均厚度和小于约10-3欧姆 - 厘米2的特定接触电阻。
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公开(公告)号：US08044425B2
公开(公告)日：2011-10-25
申请号：US11191111
申请日：2005-07-27
Applicant: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
Inventor： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC: H01L29/22
Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
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