Invention Grant
US08089090B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices
有权
用于p型氮化物发光器件的超薄欧姆接触
- Patent Title: Ultra-thin ohmic contacts for p-type nitride light emitting devices
- Patent Title (中): 用于p型氮化物发光器件的超薄欧姆接触
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Application No.: US11191111Application Date: 2005-07-27
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Publication No.: US08089090B2Publication Date: 2012-01-03
- Inventor: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
- Applicant: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L29/22
- IPC: H01L29/22
Abstract:
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
Public/Granted literature
- US08044425B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices Public/Granted day:2011-10-25
Information query
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