公开(公告)号：US07854828B2

公开(公告)日：2010-12-21

申请号：US11506054

申请日：2006-08-16

申请人： Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

发明人： Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

IPC分类号： C25D5/18 ,  C25D21/12

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/002

摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

摘要翻译： 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流，并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线，因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。

公开(公告)号：US20100116672A1

公开(公告)日：2010-05-13

申请号：US12481503

申请日：2009-06-09

申请人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

发明人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC分类号： C25D5/00 ,  C25D17/10 ,  C25D21/12

CPC分类号： C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

公开(公告)号：US20100032303A1

公开(公告)日：2010-02-11

申请号：US11506054

申请日：2006-08-16

申请人： Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

发明人： Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

IPC分类号： C25D21/12 ,  C25D17/00 ,  C25D7/12 ,  C25D5/00

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/002

摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

摘要翻译： 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流，并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线，因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。

公开(公告)号：US07211175B1

公开(公告)日：2007-05-01

申请号：US10365577

申请日：2003-02-11

申请人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

发明人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

IPC分类号： C25B15/02 ,  C25D17/00

CPC分类号： C25D17/001 ,  C25D17/005 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76877

摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。