公开(公告)号：US20070238270A1

公开(公告)日：2007-10-11

申请号：US11731983

申请日：2007-04-02

申请人： Eok Su Kim ,  Myung Kwan Ryu ,  Gon Son ,  Hyuk Soon Kwon ,  Jung Ho Park

发明人： Eok Su Kim ,  Myung Kwan Ryu ,  Gon Son ,  Hyuk Soon Kwon ,  Jung Ho Park

IPC分类号： H01L21/20

CPC分类号： H01L21/02691 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0268 ,  H01L21/02686 ,  H01L27/1285 ,  H01L27/1296

摘要： Disclosed is a method for forming a polycrystalline film. The method for forming a polycrystalline film from a film deposited on a glass substrate while a buffer layer is interposed between the deposited film and the glass substrate, which includes the steps of: preparing a mask including a transparent region having a larger size than that of resolution limitation of a laser beam equipment and an opaque region having a size which is smaller than that of the resolution limitation of the laser beam equipment; and irradiating laser beam of the maximum intensity to a film under the transparent region while irradiating the laser beam having a minimum intensity exceeding zero to the film under an opaque region by using the mask, thereby crystallizing the film by single irradiation of the laser beam.

摘要翻译： 公开了一种形成多晶膜的方法。 从沉积在玻璃基板上的膜形成多晶膜的方法，同时在沉积膜和玻璃基板之间插入缓冲层，其包括以下步骤：制备掩模，其包括具有比 激光束设备的分辨率限制和具有小于激光束设备的分辨率限制的尺寸的不透明区域; 并且通过使用掩模在不透明区域下向最薄强度超过零的激光束照射具有最大强度的激光束到透明区域下的膜，从而通过激光束的单次照射使膜结晶。

公开(公告)号：US07135388B2

公开(公告)日：2006-11-14

申请号：US10714226

申请日：2003-11-14

申请人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim

发明人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim

IPC分类号： H01L21/20

CPC分类号： H01L21/02678 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02686 ,  H01L21/2026

摘要： The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.

摘要翻译： 本发明涉及一种使用激光照射从基板上的非晶或多晶薄膜在期望的位置制造单晶硅薄膜的方法，并且沿着具有半导体薄膜的基板的激光束移动 。 该方法包括以下步骤：在透明或半透明基板上形成半导体层或金属薄膜; 通过使用激光照射的结晶法在所需尺寸的基板上形成单晶种子区域; 并且使用单晶种子区域将半导体层或金属薄膜的期望区域转换为单晶区域。

公开(公告)号：US07008863B2

公开(公告)日：2006-03-07

申请号：US10934153

申请日：2004-09-03

申请人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： H01L21/36 ,  H01L21/205

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026

摘要： Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

摘要翻译： 公开了通过使非晶硅膜结晶来形成多晶硅膜的方法。 掩模具有具有相同长度的第一至第三射击区域。 第一到第三射击区域具有交替对准的透射部分和非透射部分。 第一拍摄区域的发送部分对应于第二拍摄区域的非发送部分定位，第一拍摄区域的非透射部分对应于第二拍摄区域的发射部分定位，并且发射部分 对应于第一和第二射击区域的透射部分的中心部分对齐。 对玻璃基板进行初级至第n次激光照射处理，从而使非晶硅膜结晶成多晶硅膜。