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    SEMICONDUCTOR MANUFACTURING APPARATUS
    26.
    发明公开
    SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开

    公开(公告)号：US20240071785A1

    公开(公告)日：2024-02-29

    申请号：US18260566

    申请日：2022-06-23

    Applicant: NEXTIN, INC.

    Inventor： Seoung-Ju Na ,  Heung-Gyoon PARK ,  Keun Young LIM ,  Moo Hwan KIM

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

    CPC classification number: H01L21/67115 ,  H01J37/32568 ,  H01L21/68792 ,  H01J2893/0016

    Abstract: A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises: an ultraviolet generating part which is disposed in an ultraviolet generating chamber and generates ultraviolet rays of a target wavelength; a substrate driving part including a chuck which is disposed in a process chamber where a substrate fed therein is treated with ultraviolet rays and supports the fed substrate, and an axis which rotates and moves up and down the chuck; and a window which is disposed between the ultraviolet generating chamber and the process chamber and transmits the generated ultraviolet rays to the process chamber.

    Wire mesh member having intersecting strands bonded together and method of manufacture
    27.
    发明授权
    Wire mesh member having intersecting strands bonded together and method of manufacture 失效
    具有连接结合线的电线网会员和制造方法

    公开(公告)号：US3649865A

    公开(公告)日：1972-03-14

    申请号：US3649865D

    申请日：1969-12-29

    Applicant: TEKTRONIX INC

    Inventor： HOLMES ROBERT E

    IPC: H01J9/14 ,  H01J19/38 ,  H01J1/46 ,  H01J1/52 ,  H01J17/04

    CPC classification number: H01J9/14 ,  H01J19/38 ,  H01J2893/0016

    Abstract: A woven wire mesh member and method of manufacture are described in which the intersecting wire strands are bonded together and then etched for increasing the transmission characteristics of such mesh. The bonding of the intersecting portions of the wire strands is accomplished by electroplating and insures a strong mesh structure whose wires remain in a fixed position after such etching. The bonded mesh member is etched by electropolishing to uniformly reduce the diameter of the wires and removes the plating layer from the wires except in the regions of such bonds. This electropolishing increases the electron transmission characteristics of the wire mesh, in one example to a transmission of 85 to 90 percent. Such a mesh member may be used as a grid, a collector or a storage target electrode in an electron beam tube.

    Abstract translation: 描述了一种编织金属丝网构件和制造方法，其中交叉的线束被接合在一起，然后被蚀刻以增加这种网状物的传输特性。 金属丝股线的交叉部分的结合是通过电镀实现的，并且确保了在这种蚀刻之后电线保持在固定位置的强网格结构。 通过电解抛光对粘合网状构件进行蚀刻，以均匀地减小线的直径，并且除了这些键的区域之外的电线除去电镀层。 这种电解抛光增加了丝网的电子传输特性，在一个实例中增加了85％至90％的透射率。 这样的网状构件可以用作电子束管中的栅格，集电极或存储目标电极。

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