公开(公告)号：US20180292681A1

公开(公告)日：2018-10-11

申请号：US16002473

申请日：2018-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Seunghoon HAN ,  Ruzan SOKHOYAN ,  Harry ATWATER ,  Ghazaleh KAFAIE ,  Ragip PALA ,  Yu-Jung LU ,  Ho Wai LEE ,  Yao-Wei HUANG ,  Krishnan THYAGARAJAN

IPC: G02F1/01 ,  H01L33/44 ,  G02B5/00 ,  H01L33/06

CPC classification number: G02F1/0121 ,  G02B5/008 ,  G02F1/0102 ,  G02F1/0147 ,  H01L33/06 ,  H01L33/44

Abstract: An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

公开(公告)号：US10084542B2

公开(公告)日：2018-09-25

申请号：US15736446

申请日：2016-06-10

Applicant: THE UNIVERSITY OF SYDNEY

Inventor： David Albert Immanuel Marpaung ,  Mattia Pagani ,  Shayan Shahnia

IPC: H04B10/2575 ,  H04B10/516

CPC classification number: H04B10/2575 ,  G02F1/01 ,  G02F1/0121 ,  G02F1/0147 ,  G02F1/225 ,  G02F2203/15 ,  G02F2203/48 ,  H04B10/5165 ,  H04B10/90 ,  H04B2210/006

Abstract: A microwave photonic notch filter comprising: a modulator to modulate an optical signal with an electrical signal to generate a first sideband and a second sideband; a configurable optical processor to generate a modified optical signal by adjusting the power of the sidebands to achieve a power difference between first sideband and second sideband and by producing an antiphase relationship between light within two sidebands corresponding to the selected frequency band; an optical resonance to adjust the power of the first sideband of the modified optical signal corresponding to the selected frequency band by a resonance power adjustment to generate a resonance output signal; an optical-to-electrical converter to generate a copy of the electrical signal with suppressed frequency components within the selected frequency band; and a control unit to re-configure the configurable optical processor to adjust the power difference between two sidebands towards the resonance power adjustment.

公开(公告)号：US20180259796A1

公开(公告)日：2018-09-13

申请号：US15451745

申请日：2017-03-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  H01P3/00 ,  G02F1/01 ,  G02F1/313

CPC classification number: G02F1/0054 ,  G02F1/0147 ,  G02F1/313 ,  G02F2202/105 ,  H01P3/003

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US20180252028A1

公开(公告)日：2018-09-06

申请号：US15906696

申请日：2018-02-27

Applicant: Alliance for Sustainable Energy, LLC

Inventor： Lance Michael WHEELER ,  Joseph Matthew LUTHER ,  Jeffrey A. CHRISTIANS ,  Joseph Jonathan BERRY

IPC: E06B9/24 ,  H01G9/20 ,  H01L51/42 ,  G02F1/01

CPC classification number: E06B9/24 ,  E06B2009/2417 ,  E06B2009/2476 ,  G02F1/0147 ,  H01G9/2009 ,  H01L51/4226 ,  H01L51/4253 ,  H01L2251/306

Abstract: The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

公开(公告)号：US20180217472A1

公开(公告)日：2018-08-02

申请号：US15883012

申请日：2018-01-29

Applicant: ANALOG PHOTONICS LLC

Inventor： Christopher POULTON ,  Michael WATTS ,  Ehsan HOSSEINI ,  Erman TIMURDOGAN

IPC: G02F1/295

CPC classification number: G02F1/2955 ,  G02F1/0147

Abstract: Aspects of the present disclosure describe photonic integrated circuits on a common substrate including an optical phased array having a plurality of emitters and a plurality of thermal phase shifters in which the thermal phase shifters are thermally isolated from one another through the effect of one or more trenches formed over and/or under and/or around the thermal phase shifters and/or waveguides including same.

公开(公告)号：US10012851B2

公开(公告)日：2018-07-03

申请号：US15214919

申请日：2016-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Seunghoon Han ,  Ruzan Sokhoyan ,  Harry Atwater ,  Ghazaleh Kafaie ,  Ragip Pala ,  Yu-Jung Lu ,  Ho Wai Lee ,  Yao-Wei Huang ,  Krishnan Thyagarajan

IPC: G02F1/03 ,  G02F1/07 ,  G02F1/01 ,  H01L33/06 ,  G02B5/00 ,  H01L33/44

CPC classification number: G02F1/0121 ,  G02B5/008 ,  G02F1/0102 ,  G02F1/0147 ,  H01L33/06 ,  H01L33/44

Abstract: An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

公开(公告)号：US20180143462A1

公开(公告)日：2018-05-24

申请号：US15858099

申请日：2017-12-29

Applicant: International Business Machines Corporation

Inventor： Douglas M. Gill ,  Chi Xiong

IPC: G02F1/01 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02F1/0147 ,  G02B6/132 ,  G02B6/136 ,  G02F1/011 ,  G02F1/025

Abstract: Techniques for increasing efficiency of thermo-optic phase shifters using multi-pass heaters and thermal bridges are provided. In one aspect, a thermo-optic phase shifter device includes: a plurality of optical waveguides formed in an SOI layer over a buried insulator; at least one heating element adjacent to the optical waveguides; and thermal bridges connecting at least one of the optical waveguides directly to the heating element. A method for forming a thermo-optic phase shifter device is also provided.

公开(公告)号：US20180113332A1

公开(公告)日：2018-04-26

申请号：US15678966

申请日：2017-08-16

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Myungjoon KWACK ,  Jaegyu PARK ,  Jiho JOO ,  Gyungock KIM

IPC: G02F1/01 ,  G02F1/00 ,  G02F1/225

CPC classification number: G02F1/0147 ,  G02F1/009 ,  G02F1/2257 ,  G02F2201/06 ,  G02F2202/022 ,  G02F2203/50

Abstract: Provided is a thermo-optic optical switch including an input waveguide configured to receive an optical signal, an output waveguide configured to output the optical signal, branch waveguides branching from the input waveguide to be connected to the output waveguide, and heater electrodes disposed on the branch waveguides and configured to heat the branch waveguides, wherein the branch waveguides includes first and second phase shifters having first and second thermo-optic coefficients of opposite signs.

公开(公告)号：US09946099B2

公开(公告)日：2018-04-17

申请号：US15596880

申请日：2017-05-16

Applicant: International Business Machines Corporation

Inventor： Douglas M. Gill ,  Chi Xiong

IPC: G02F1/01 ,  G02B6/136 ,  G02B6/132

CPC classification number: G02F1/0147 ,  G02B6/132 ,  G02B6/136 ,  G02F1/011 ,  G02F1/025

Abstract: Techniques for increasing efficiency of thermo-optic phase shifters using multi-pass heaters and thermal bridges are provided. In one aspect, a thermo-optic phase shifter device includes: a plurality of optical waveguides formed in an SOI layer over a buried insulator; at least one heating element adjacent to the optical waveguides; and thermal bridges connecting at least one of the optical waveguides directly to the heating element. A method for forming a thermo-optic phase shifter device is also provided.

公开(公告)号：US09946022B2

公开(公告)日：2018-04-17

申请号：US15365548

申请日：2016-11-30

Applicant: Jason Scott Orcutt ,  Karan Kartik Mehta ,  Rajeev Jagga Ram ,  Amir Hossein Atabaki

Inventor： Jason Scott Orcutt ,  Karan Kartik Mehta ,  Rajeev Jagga Ram ,  Amir Hossein Atabaki

IPC: G02B6/136 ,  G02B6/132 ,  G02F1/025 ,  G02B6/122 ,  G02B6/12

CPC classification number: G02B6/136 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/1225 ,  G02B6/132 ,  G02B6/305 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12107 ,  G02B2006/12123 ,  G02F1/0147 ,  G02F1/025 ,  G02F2001/0151

Abstract: Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer. Filling the trench with a high-index dielectric material yields a waveguide that can guide visible and/or infrared light, depending on the waveguide's dimensions and refractive index contrast.