公开(公告)号：US20140239412A1

公开(公告)日：2014-08-28

申请号：US13874055

申请日：2013-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD

Inventor： Kuo-Nan Yang ,  Chou-Kun Lin ,  Jerry Chang-Jui Kao ,  Yi-Chuin Tsai ,  Chien-Ju Chao ,  Chung-Hsing Wang

IPC: H01L27/07

CPC classification number: H01L29/66545 ,  H01L21/823412 ,  H01L27/0207 ,  H01L27/0705 ,  H01L27/11807

Abstract: An integrated circuit includes a first and a second standard cell. The first standard cell includes a first gate electrode, and a first channel region underlying the first gate electrode. The first channel region has a first channel doping concentration. The second standard cell includes a second gate electrode, and a second channel region underlying the second gate electrode. The second channel region has a second channel doping concentration. A dummy gate includes a first half and a second half in the first and the second standard cells, respectively. The first half and the second half are at the edges of the first and the second standard cells, respectively, and are abutted to each other. A dummy channel is overlapped by the dummy gate. The dummy channel has a third channel doping concentration substantially equal to a sum of the first channel doping concentration and the second channel doping concentration.

Abstract translation: 集成电路包括第一和第二标准单元。 第一标准单元包括第一栅极电极和第一栅极电极下面的第一沟道区域。 第一通道区域具有第一通道掺杂浓度。 第二标准单元包括第二栅极电极和第二栅极电极下面的第二沟道区域。 第二沟道区具有第二沟道掺杂浓度。 虚拟栅极分别包括第一和第二标准单元中的前半部分和第二半部分。 第一半和第二半分别在第一标准单元和第二标准单元的边缘处并且彼此抵接。 虚拟通道由虚拟门重叠。 虚拟通道具有基本上等于第一通道掺杂浓度和第二通道掺杂浓度之和的第三通道掺杂浓度。