公开(公告)号：US20190096951A1

公开(公告)日：2019-03-28

申请号：US15882382

申请日：2018-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： YUN-WEI CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

公开(公告)号：US20180026061A1

公开(公告)日：2018-01-25

申请号：US15721201

申请日：2017-09-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Bo-Tsung TSAI ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.

公开(公告)号：US20170301720A1

公开(公告)日：2017-10-19

申请号：US15635318

申请日：2017-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Kun-Huei LIN ,  Chun-Hao CHOU ,  Tzu-Hsuan HSU ,  Ching-Chun WANG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

公开(公告)号：US20170110494A1

公开(公告)日：2017-04-20

申请号：US15171959

申请日：2016-06-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Yun-Wei CHENG ,  Kuo-Cheng LEE ,  Chun-Hao CHOU ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.

公开(公告)号：US20170077157A1

公开(公告)日：2017-03-16

申请号：US14850727

申请日：2015-09-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract translation: 半导体器件包括衬底，器件层，抗反射涂层，反射结构，复合栅格结构，钝化层和滤色器。 器件层设置在衬底上，沟槽在器件层和衬底中形成。 抗反射涂层保形地覆盖器件层，衬底和沟槽。 反射结构分别设置在沟槽中的抗反射涂层上。 复合网格结构覆盖抗反射涂层和反射结构。 复合栅格结构包括通过复合栅格结构的空穴，并且复合栅格结构包括顺序地堆叠在反射结构上的金属栅格层和电介质栅格层。 钝化层保形地覆盖复合网格结构。 滤色器分别填充空腔。

公开(公告)号：US20160329364A1

公开(公告)日：2016-11-10

申请号：US14934648

申请日：2015-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Horng-Huei TSENG ,  Hsin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L27/1462 ,  H01L21/0206 ,  H01L21/02181 ,  H01L21/0228 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A method for forming a high dielectric constant (high-κ) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-κ dielectric layer on the substrate. A chloride concentration of the high-κ dielectric layer is lower than about 8 atoms/cm3.

Abstract translation: 一种在基板上形成高介电常数（高κ）电介质层的方法，包括在基板的表面上进行预清洁处理。 在表面上引入氯化物前体。 将氧化剂引入表面以在基底上形成高κ介电层。 高κ电介质层的氯化物浓度低于约8原子/ cm3。

公开(公告)号：US20210082784A1

公开(公告)日：2021-03-18

申请号：US17107312

申请日：2020-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Ying-Hao CHEN

IPC: H01L23/367 ,  H01L23/48 ,  H01L25/065

Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.

公开(公告)号：US20210020671A1

公开(公告)日：2021-01-21

申请号：US16512834

申请日：2019-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Ying-Hao CHEN

IPC: H01L27/146

Abstract: A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.

公开(公告)号：US20200052022A1

公开(公告)日：2020-02-13

申请号：US16657469

申请日：2019-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146

Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.

公开(公告)号：US20200035732A1

公开(公告)日：2020-01-30

申请号：US16595729

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.