公开(公告)号：US11296027B2

公开(公告)日：2022-04-05

申请号：US16681556

申请日：2019-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yi Wu ,  Li-Hsuan Chu ,  Ching-Wen Wen ,  Chia-Chun Hung ,  Chen Liang Chang ,  Chin-Szu Lee ,  Hsiang Liu

IPC: H01L23/48 ,  H01L23/532 ,  H01L27/146 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L23/485

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.