公开(公告)号：US20210142982A1

公开(公告)日：2021-05-13

申请号：US16754402

申请日：2018-09-26

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Takamichi KIKUCHI ,  Naotaka NORO ,  Toshio HASEGAWA ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01J37/20

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

公开(公告)号：US20200370172A1

公开(公告)日：2020-11-26

申请号：US16881787

申请日：2020-05-22

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi MORIYA ,  Tadahiro ISHIZAKA ,  Yoshinori MORISADA

IPC: C23C16/27 ,  H01L21/311 ,  C23C16/455

Abstract: In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

公开(公告)号：US20190120703A1

公开(公告)日：2019-04-25

申请号：US16095114

申请日：2017-04-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi MITSUNARI ,  Satoshi TANAKA ,  Tsuyoshi MORIYA ,  Toshiya MATSUDA ,  Masaaki MIYAGAWA ,  Kenya IWASAKI

IPC: G01K11/32

Abstract: A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

公开(公告)号：US20180166298A1

公开(公告)日：2018-06-14

申请号：US15831811

申请日：2017-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Ayuta SUZUKI ,  Kosuke YAMAMOTO ,  Tsuyoshi MORIYA ,  Kazuyoshi MATSUZAKI

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67017 ,  C23C16/455 ,  C23C16/45508 ,  C23C16/45525 ,  C23C16/45565 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67

Abstract: In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.