公开(公告)号：US20070096126A1

公开(公告)日：2007-05-03

申请号：US10582913

申请日：2004-12-16

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

摘要： An object of the present invention is to provide a negative electrode which attains excellent Ohmic contact with an n-type gallium nitride-based compound semiconductor layer, which resists deterioration in characteristics which would be caused by heating, and which can be produced at high efficiency. Another object of the invention is to provide a gallium nitride-based compound semiconductor light-emitting device having the negative electrode. The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode comprises a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of a Cr—Al alloy.

摘要翻译： 本发明的目的是提供一种与n型氮化镓系化合物半导体层具有优异的欧姆接触的负极，其耐受由加热引起的特性劣化，并且能够以高效率 。 本发明的另一个目的是提供一种具有负极的氮化镓基化合物半导体发光器件。 本发明的氮化镓系化合物半导体发光元件包括氮化镓系化合物半导体的n型半导体层，氮化镓类化合物半导体的发光层和p型半导体层 氮化镓基化合物半导体依次形成在基板上，分别具有设置在n型半导体层和p型半导体层上的负极和正极; 其中所述负极包括接合焊盘层和与所述n型半导体层接触的接触金属层，并且所述接触金属层由Cr-Al合金构成。

公开(公告)号：US06635819B2

公开(公告)日：2003-10-21

申请号：US09825949

申请日：2001-04-04

申请人： Yoshio Awakura ,  Koji Kamei ,  Satoshi Shiratori

发明人： Yoshio Awakura ,  Koji Kamei ,  Satoshi Shiratori

IPC分类号： H05K900

CPC分类号： H05K9/0049 ,  B82Y25/00 ,  H01F10/007 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/1617 ,  H01L2924/3011 ,  H05K9/0088 ,  Y10T428/12431 ,  H01L2924/00

摘要： In an electronic component (11) comprising an electronic circuit or a circuit element in a metallic case including a case (13) and a cover (39), a magnetic thin film (51) made of a magnetic loss material is provided on at least one part of an inner wall surface of the metallic case. In the magnetic loss material, its composition is represented by M-X—Y, wherein M denotes at least one of Fe, Co and Ni, X denotes at least one of elements other than M and Y, and Y denotes at least one of F, N and O. The maximum value &mgr;″max of an imaginary part &mgr;″, which is an imaginary number component of a complex permeability of the magnetic loss material, exists within a frequency range from 100 MHz to 10 GHz. A relative bandwidth bwr is not greater than 200% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of &mgr;″ is 50% of the maximum &mgr;″max and normalizing the frequency bandwidth at the center frequency thereof. It is possible to provide an electronic component including a metallic case, which contains a high-speed operation type of semiconductor device and/or an electronic circuit and in which undesired radiation is reduced.

摘要翻译： 在包括壳体（13）和盖（39）的金属壳体中的电子电路或电路元件的电子部件（11）中，至少设置由磁损耗材料制成的磁性薄膜（51） 金属外壳的内壁表面的一部分。 在磁损耗材料中，其组成由MXY表示，其中M表示Fe，Co和Ni中的至少一种，X表示除M和Y以外的元素中的至少一种，Y表示F，N和 作为磁损耗材料的复磁导率的虚数分量的虚数μ“的最大值mu''max存在于从100MHz到10GHz的频率范围内。 相对带宽bwr不大于200％，其中通过提取两个频率之间的频率带宽获得相对带宽bwr，其中mu“的值是最大mu''max的50％，并且将频带宽度归一化 中心频率。 可以提供包括金属外壳的电子部件，其包含高速操作型半导体器件和/或电子电路，并且其中不期望的辐射被减少。

公开(公告)号：US08829555B2

公开(公告)日：2014-09-09

申请号：US13139642

申请日：2009-12-14

申请人： Koji Kamei ,  Remi Ohba ,  Takashi Hodota

发明人： Koji Kamei ,  Remi Ohba ,  Takashi Hodota

IPC分类号： H01L33/62 ,  H01L33/42 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

摘要： A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.

摘要翻译： 半导体发光元件（1）包括：基板（110）; 包括发光层（150）并层叠在基板（110）上的多层半导体层（100）; 包含氧化铟并在所述多层半导体层（100）上层叠的透明电极（170）; 第一接合层（190），其包括作为阀作用金属的钽，并以与透明电极（170）接触的第一接合层（190）的一侧成为透明电极（170）的方式层叠在透明电极（170）上， 氮化钽层或氧化钽层; 以及层叠在第一接合层（190）上并用于与外部电连接的第一接合焊盘电极（200）。 这提高了透明电极或半导体层与连接电极的接合性能和电极的可靠性。

公开(公告)号：US08524801B2

公开(公告)日：2013-09-03

申请号：US13141038

申请日：2009-12-17

申请人： Hiroyuki Yoshida ,  Tsuyoshi Oda ,  Takahiro Sato ,  Yusuke Shimizu ,  Koji Kamei ,  Toshiya Iwasaki

发明人： Hiroyuki Yoshida ,  Tsuyoshi Oda ,  Takahiro Sato ,  Yusuke Shimizu ,  Koji Kamei ,  Toshiya Iwasaki

IPC分类号： C08K9/00 ,  C09B67/00 ,  C09D5/00 ,  C09D11/00

CPC分类号： C09D11/326 ,  C09B67/0097

摘要： The first invention relates to a water-based ink for ink-jet printing which includes colorant-containing polymer particles (A) obtained by dispersing a colorant with a water-soluble polymer (x) and a water-insoluble polymer (y), a water-soluble organic solvent (B) and water, wherein a weight ratio of the water-insoluble polymer (y) to the water-soluble polymer (x) [(y)/(x)] is from 2.0 to 5.0, and a content of the water-soluble organic solvent (B) in the ink is from 10 to 70% by weight. The water-based ink for ink-jet printing according to the first invention is excellent in ejection property and optical density and exhibits a low viscosity. The second invention relates to a process for producing a water dispersion for ink-jet printing, which includes a step (I) of mixing a dispersion of a colorant with an emulsion of a water-insoluble polymer containing an organic solvent; a step (II) of subjecting the resulting mixture to dispersing treatment to obtain a dispersion of the colorant onto which the water-insoluble polymer is deposited; and a step (III) of removing the organic solvent from the resulting dispersion. The water dispersion produced by the process of the second invention is capable of exhibiting a high optical density suitable for high-speed printing.

摘要翻译： 第一发明涉及一种喷墨打印用水性油墨，其包括通过将着色剂与水溶性聚合物（x）和水不溶性聚合物（y）分散而得到的含有着色剂的聚合物粒子（A）， 水溶性有机溶剂（B）和水，其中水不溶性聚合物（y）与水溶性聚合物（x）[（y）/（x）]的重量比为2.0〜5.0， 油墨中的水溶性有机溶剂（B）的含量为10〜70重量％。 根据第一发明的喷墨印刷用水性油墨的喷出性和光密度优异，粘度低。 第二发明涉及一种生产用于喷墨印刷的水分散体的方法，其包括将着色剂的分散体与含有机溶剂的水不溶性聚合物的乳液混合的步骤（I） 对所得混合物进行分散处理以获得其上沉积有不溶于水的聚合物的着色剂的分散体的步骤（II）; 和从所得分散体中除去有机溶剂的步骤（III）。 通过第二发明的方法制备的水分散体能够表现出适于高速印刷的高光密度。

公开(公告)号：US20120217534A1

公开(公告)日：2012-08-30

申请号：US13505973

申请日：2010-10-27

申请人： Koji Kamei ,  Honglin Wang

发明人： Koji Kamei ,  Honglin Wang

IPC分类号： H01L33/42 ,  H01L33/36

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2933/0016

摘要： Disclosed is a semiconductor light emitting element (1) which is provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode (170), and an n-side electrode (400) formed on the n-type semiconductor layer (140). The p-side electrode (300) is provided with a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode (170), and the n-side electrode (400) is provided with an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer (140). The p-side joining layer (310) and the n-side joining layer (410) are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode (320) and the n-side bonding pad electrode (420) are configured of a laminated structure composed of Pt and Au. Thus, the configuration is simplified by making the two electrodes have the common structure, and deterioration of the electrical characteristics of the semiconductor light emitting element is suppressed, while improving the joining property of the electrodes.

摘要翻译： 公开了一种半导体发光元件（1），其具有n型半导体层（140），发光层（150），p型半导体层（160），透明电极（170）， 形成在透明电极（170）上的p侧电极（300）和形成在n型半导体层（140）上的n侧电极（400）。 p侧电极（300）设置有层叠在透明电极（170）上的p侧接合层（310）和p侧接合焊盘电极（320），以及n侧电极 400）设置有层叠在n型半导体层（140）上的n侧接合层（410）和n侧焊盘电极（420）。 p侧接合层（310）和n侧接合层（410）由由TaN和Pt构成的混合层以及p侧接合焊盘电极（320）和n侧接合焊盘电极 （420）由Pt和Au构成的叠层结构构成。 因此，通过使两个电极具有共同的结构，简化了结构，并且在提高电极的接合性的同时，抑制了半导体发光元件的电特性的劣化。

公开(公告)号：US08049243B2

公开(公告)日：2011-11-01

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。

公开(公告)号：US20070170461A1

公开(公告)日：2007-07-26

申请号：US10589611

申请日：2005-02-22

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L29/74

CPC分类号： H01L33/40 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having a positive electrode that exhibits low contact resistance with a p-type gallium nitride compound semiconductor layer and that can be fabricated with high productivity. The inventive gallium nitride compound semiconductor light-emitting device includes a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a negative electrode provided in contact with the n-type semiconductor layer, and a positive electrode provided in contact with the p-type semiconductor layer, the layers being successively provided atop the substrate in this order and being composed of a gallium nitride compound semiconductor, wherein the positive electrode includes at least a contact metal layer which is in contact with the p-type semiconductor layer, the contact metal layer comprises at least one metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru, Re, and Os, or an alloy containing said at least one metal, and the surface portion of the p-type semiconductor layer on the positive electrode side includes a positive-electrode-metal-containing layer that contains at least one metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru, Re, and Os.

摘要翻译： 本发明的目的是提供一种具有与p型氮化镓化合物半导体层具有低接触电阻并且可以以高生产率制造的正电极的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体发光器件包括衬底，n型半导体层，发光层，p型半导体层，与n型半导体层接触的负极，以及 与p型半导体层接触地设置的正极，该层依次依次设置在基板的上方，并由氮化镓系化合物半导体构成，其中，所述正极至少包含接触金属层 p型半导体层，接触金属层包括选自Pt，Ir，Rh，Pd，Ru，Re和Os中的至少一种金属，或包含所述至少一种金属的合金，以及表面 正极侧的p型半导体层的一部分包含含有选自Pt，Ir，Rh中的至少一种金属的正极 - 金属含有层 ，Pd，Ru，Re和Os。

公开(公告)号：US06595802B1

公开(公告)日：2003-07-22

申请号：US09826168

申请日：2001-04-04

申请人： Shinya Watanabe ,  Koji Kamei

发明人： Shinya Watanabe ,  Koji Kamei

IPC分类号： H01R1366

CPC分类号： B82Y25/00 ,  H01F1/0063 ,  H01R13/719

摘要： In a connector having at least one contact (3a,3b) held by an insulator (2a), a high-frequency current suppressor (4a,4b) is provided on the contact or the insulator. The high-frequency current suppressor serves to attenuate a high-frequency current flowing through the contact and having a frequency within a frequency band between several tens MHz and several GHz.

摘要翻译： 在具有由绝缘体（2a）保持的至少一个触点（3a，3b）的连接器中，在触点或绝缘体上设置高频电流抑制器（4a，4b）。 高频电流抑制器用于衰减流过接触件的高频电流并且具有在几十MHz至几GHz之间的频带内的频率。

公开(公告)号：US08748903B2

公开(公告)日：2014-06-10

申请号：US13505973

申请日：2010-10-27

申请人： Koji Kamei ,  Honglin Wang

发明人： Koji Kamei ,  Honglin Wang

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/06 ,  H01L31/00 ,  H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2933/0016

摘要： A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.

摘要翻译： 设置有n型半导体层（140），发光层（150），p型半导体层（160），透明电极（170），p侧电极（140）的半导体发光元件 （300），形成在所述n型半导体层上的n侧电极（400）。 p侧电极具有层叠在透明电极上的p侧接合层（310）和p侧焊盘电极（320），并且n侧电极具有n侧接合层（410） ）和n侧接合焊盘电极（420），层叠在n型半导体层上。 p侧接合层和n侧接合层由由TaN和Pt构成的混合层构成，p侧接合焊盘电极和n侧接合焊盘电极由Pt组成的层叠结构构成 和Au。

公开(公告)号：US20070181907A1

公开(公告)日：2007-08-09

申请号：US11660040

申请日：2005-08-23

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： An object of the present invention is to provide a positive electrode, in which the silver is used, for a compound-semiconductor light-emitting device high in inverse voltage and excellent in stability and productivity. The inventive positive electrode for a compound-semiconductor light-emitting device comprises a reflective layer of a silver alloy.

摘要翻译： 本发明的目的是提供一种其中使用银的正电极，用于具有高反向电压和优异的稳定性和生产率的化合物半导体发光器件。 本发明的化合物半导体发光装置用正极包括银合金的反射层。