公开(公告)号：US10797165B2

公开(公告)日：2020-10-06

申请号：US16116577

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongryeol Yoo ,  Jeongho Yoo ,  Sujin Jung ,  Youngdae Cho

IPC: H01L29/66 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78 ,  H01L21/02 ,  H01L27/092

Abstract: A semiconductor device includes a well region in a substrate, a semiconductor pattern on the well region, the semiconductor pattern including an impurity, and a gate electrode on the semiconductor pattern. A concentration of the impurity in the semiconductor pattern increases in a direction from an upper portion of the semiconductor pattern, adjacent to the gate electrode, to a lower portion of the semiconductor pattern, adjacent to the well region.