公开(公告)号：US20220190168A1

公开(公告)日：2022-06-16

申请号：US17519967

申请日：2021-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Taek Kim ,  Seok Hoon Kim ,  Pan Kwi Park ,  Moon Seung Yang ,  Seo Jin Jeong ,  Min-Hee Choi ,  Ryong Ha

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

公开(公告)号：US20220181500A1

公开(公告)日：2022-06-09

申请号：US17533719

申请日：2021-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryong Ha ,  Seok Hoon Kim ,  Jung Taek Kim ,  Pan Kwi Park ,  Moon Seung Yang ,  Seo Jin Jeong

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.