公开(公告)号：US20190148772A1

公开(公告)日：2019-05-16

申请号：US16185042

申请日：2018-11-09

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Insun PARK ,  Myongchun KOH ,  Dongyoung KIM ,  Eunha PARK ,  Yoonsok KANG ,  Jinah SEO

IPC: H01M10/0567 ,  H01M10/42 ,  H01M10/0569 ,  H01M10/0525 ,  H01M4/525 ,  H01M4/505 ,  H01M4/36 ,  H01M4/38 ,  H01M4/587

Abstract: An electrolyte additive for a lithium battery comprising a sulfone compound represented by Formula 1: wherein, in Formula 1, R1 is a halogen-substituted or unsubstituted C1-C5 alkyl group, a halogen-substituted or unsubstituted C4-C10 cycloalkyl group, a halogen-substituted or unsubstituted C5-C10 aryl group, or a halogen-substituted or unsubstituted C2-C10 heteroaryl group, and R2 is a halogen-substituted or unsubstituted C2-C10 alkenyl group.

公开(公告)号：US20130147022A1

公开(公告)日：2013-06-13

申请号：US13706960

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-soo YOON ,  Jongwon HONG ,  Insun PARK ,  Jongmyeong LEE ,  Seung-Wook CHOI

IPC: H01L29/06

CPC classification number: H01L29/0607 ,  H01L23/3192 ,  H01L23/562 ,  H01L27/108 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device may include an interlayer insulating layer containing hydrogen and a first passivation layer configured to prevent or inhibit an out-gassing of the hydrogen. In the method, a second passivation layer configured to control a warpage characteristic of a wafer may be formed on the first passivation layer.

Abstract translation: 半导体器件可以包括含有氢的层间绝缘层和被配置为防止或抑制氢的排气的第一钝化层。 在该方法中，可以在第一钝化层上形成用于控制晶片的翘曲特性的第二钝化层。