公开(公告)号：US20170288138A1

公开(公告)日：2017-10-05

申请号：US15358544

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Woo Lee ,  Soon-Oh Park ,  Jeong-Hee Park ,  Hideki Horii

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675

Abstract: A variable resistance memory device includes a pattern of one or more first conductive lines, a pattern of one or more second conductive lines, and a memory structure between the first and second conductive lines. The pattern of first conductive lines extends in a first direction on a substrate, and the first conductive lines extend in a second direction crossing the first direction. The pattern of second conductive lines extends in the second direction on the first conductive lines, and the second conductive lines extend in the first direction. The memory structure vertically overlaps a first conductive line and a second conductive line. The memory structure includes an electrode structure, an insulation pattern on a central upper surface of the electrode structure, and a variable resistance pattern on an edge upper surface of the electrode structure. The variable resistance pattern at least partially covers a sidewall of the insulation pattern.

公开(公告)号：US09520556B2

公开(公告)日：2016-12-13

申请号：US14746039

申请日：2015-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hideki Horii ,  Jeonghee Park ,  Sugwoo Jung

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1273 ,  H01L45/141

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括选择元件，设置在选择元件上以包括水平部分和垂直部分的下电极图案; 和在下电极图案上的相变图案。 垂直部分可以从水平部分向相变图案延伸，并且具有面积小于可相变图案底面的面积。